Integrated circuit packaging structure and method of making the same

Abstract

The invention provides an integrated circuit packaging and method of making the same. The integrated circuit packaging includes a substrate, a semiconductor die, a heat-dissipating module, and a protection layer. The substrate has an inner circuit formed on a first surface, and an outer circuit formed on a second surface and electrically connected to the inner circuit. The semiconductor die is mounted on the first surface of the substrate such that the plurality of bond pads contact the inner circuit. The heat-dissipating module includes a heat-conducting device, and the heat-conducting device, via a flat end surface thereof, contacts and bonds with a back surface of the semiconductor die. The protection layer contacts a portion of the first surface of the substrate and a portion of the heat-conducting device, such that the semiconductor die is encapsulated therebetween.

1 . An integrated circuit packaging structure, comprising: 
 a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;    a semiconductor die having an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface, the semiconductor die being mounted on the first surface of the substrate such that the plurality of bond pads contact the inner circuit;    a heat-dissipating module comprising a heat-conducting device having a flat end surface, the heat-conducting device via the flat end surface thereof contacting and bonding with the back surface of the semiconductor die; and    a protection layer formed to contact a portion of the first surface of the substrate and a portion of the heat-conducting device, such that the semiconductor die is encapsulated therebetween.    
   
   
       2 . The integrated circuit packaging structure of  claim 1 , further comprising a casing for enclosing the heat-dissipating module, the protection layer, and the substrate.  
   
   
       3 . The integrated circuit packaging structure of  claim 2 , wherein the casing has an opening and a retainer formed on the inner wall of the opening for clamping with the substrate.  
   
   
       4 . The integrated circuit packaging structure of  claim 1 , wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.  
   
   
       5 . The integrated circuit packaging structure of  claim 1 , wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.  
   
   
       6 . The integrated circuit packaging structure of  claim 1 , wherein the semiconductor die is a high power IC device.  
   
   
       7 . The integrated circuit packaging structure of  claim 1 , wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.  
   
   
       8 . A method of making an integrated circuit packaging structure, said method comprising the steps of: 
 preparing a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;    preparing a semiconductor die having an active surface and a plurality of bond pads formed on the active surface, and mounting the semiconductor die on the first surface of the substrate such that the plurality of bond pads contact the inner circuit, wherein the semiconductor die also has a back surface opposite to the active surface;    preparing a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof;    forming a protection layer to substantially cover a portion of the first surface of the substrate, the protection layer having an opening adapted to accommodate the flat end surface of the heat-conducting device; and    disposing the distal end of the heat-conducting device into the opening of the protection layer, and contacting and bonding the flat end surface of the heat-conducting device with the back surface of the semiconductor die to complete the integrated circuit packaging.    
   
   
       9 . The method of  claim 8 , further comprising the step of: 
 by a casing, enclosing the heat-dissipating module, the protection layer, and the substrate.    
   
   
       10 . The method of  claim 8 , wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.  
   
   
       11 . The method of  claim 8 , wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.  
   
   
       12 . The method of  claim 8 , wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.  
   
   
       13 . The method of  claim 8 , wherein the semiconductor die is a high power IC device.  
   
   
       14 . The method of  claim 8 , wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.  
   
   
       15 . An integrated circuit packaging structure, comprising: 
 a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;    a protection layer formed on the first surface of the substrate, the protection layer having an opening where the inner circuit is disposed;    a semiconductor die having an active surface, a plurality of bond pads formed on the active surface, and a back surface opposite to the active surface, the semiconductor die being mounted in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exists between the semiconductor die and the protection layer; and    a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof, the heat-conducting device via the distal end thereof inserting into the opening of the protection layer and via the flat end surface thereof contacting and bonding with the back surface of the semiconductor die.    
   
   
       16 . The integrated circuit packaging structure of  claim 15 , wherein the gap between the semiconductor die and the protection layer is filled with a thermal adhesive.  
   
   
       17 . The integrated circuit packaging structure of  claim 15 , further comprising a casing for enclosing the heat-dissipating module, the protection layer, and the substrate.  
   
   
       18 . The integrated circuit packaging structure of  claim 17 , wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.  
   
   
       19 . The integrated circuit packaging structure of  claim 15 , wherein the heat-dissipating module further comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.  
   
   
       20 . The integrated circuit packaging structure of  claim 15 , wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.  
   
   
       21 . The integrated circuit packaging structure of  claim 15 , wherein the semiconductor die is a high power IC device.  
   
   
       22 . The integrated circuit packaging structure of  claim 1 , wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.  
   
   
       23 . A method of making an integrated circuit packaging structure, said method comprising the steps of: 
 preparing a substrate having a first surface, an inner circuit formed on the first surface, a second surface opposite to the first surface, and an outer circuit formed on the second surface and electrically connected to the inner circuit;    forming a protection layer to contact the first surface of the substrate, the protection layer having an opening where the inner circuit is disposed;    preparing a semiconductor die having an active surface and a plurality of bond pads formed on the active surface, and mounting the semiconductor die in the opening of the protection layer such that the plurality of bond pads contact the inner circuit, and a gap exists between the semiconductor die and the protection layer, wherein the semiconductor also has a back surface opposite to the active surface;    preparing a heat-dissipating module comprising a heat-conducting device having a flat end surface at a distal end thereof, and disposing the distal end of the heat-conducting device into the opening of the protection layer; and    contacting and bonding the flat end surface of the heat-conducting device with the back surface of the semiconductor die to complete the integrated circuit packaging.    
   
   
       24 . The method of  claim 23 , further comprising the step of: 
 filling a thermal adhesive into the gap between the semiconductor die and the protection layer.    
   
   
       25 . The method of  claim 23 , further comprising the step of: 
 by a casing, enclosing the heat-dissipating module, the protection layer, and the substrate.    
   
   
       26 . The method of  claim 25 , wherein the casing has an opening and a retainer formed on the inner wall of the opening of the casing for clamping the substrate.  
   
   
       27 . The method of  claim 23 , wherein the heat-dissipating module comprises at least one heat-dissipating fin disposed around a circumference of the heat-conducting device.  
   
   
       28 . The method of  claim 23 , wherein the heat-conducting device is a heat pipe, a heat column, or a column made of a material with high thermal conductivity.  
   
   
       29 . The method of  claim 23 , wherein the semiconductor die is a high power IC device.  
   
   
       30 . The method of  claim 23 , wherein the semiconductor die is mounted on the first surface of the substrate by a flip-chip process.