Systems and methods for biasing high fill-factor sensor arrays and the like

Abstract

A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in the invention allows to achieve mass production of photosensors without the use of wire bonding.

1 . A photosensor device to which a voltage is to be applied, comprising: 
 an intrinsic layer;    a positively doped layer;    an electrically conductive layer over the positively doped layer; and    a negatively doped layer adjacent to the insulating layer, wherein:    the insulating layer, the positively doped layer, the negatively doped layer and the electrically conductive layer are functionally divided into a plurality of semiconductor structures; and    the voltage is applied to a selected one of the plurality of semiconductor structures.    
   
   
       2 . The photosensor device of  claim 1 , further comprising a circuit reducing an effective resistance of the selected semiconductor structure.  
   
   
       3 . The photosensor device of  claim 2 , wherein the circuit is a negative feedback loop.  
   
   
       4 . The photosensor device of  claim 2 , further comprising a grounded guard ring located between the selected semiconductor structure and at least one other one of the plurality of semiconductor structures.  
   
   
       5 . The photosensor device of  claim 1 , wherein the electrically conductive layer comprises indium titanium oxide.  
   
   
       6 . The photosensor device of  claim 1 , further comprising a grounded guard ring that is part of the photosensor device and that is located between the selected semiconductor structure and at least one other one of the plurality of semiconductor structures.  
   
   
       7 . The photosensor device of  claim 1 , wherein the selected semiconductor structure is located at a distance from the rest of the plurality of semiconductor structures.  
   
   
       8 . The photosensor device of  claim 1 , wherein the selected semiconductor structure is directly connected to a voltage source that supplies the voltage.  
   
   
       9 . The photosensor device of  claim 1 , wherein each semiconductor structure is a diode.  
   
   
       10 . The photosensor device of  claim 1 , wherein at least the selected semiconductor structure is a diode.  
   
   
       11 . The photosensor device of  claim 1 , wherein the electrically conductive layer is located at least over the positively doped layer opposite the intrinsic layer.  
   
   
       12 . The photosensor device of  claim 1 , wherein the positively doped layer is located at least over a first surface of the intrinsic layer.  
   
   
       13 . The photosensor device of  claim 1 , wherein the negatively doped layer is located at least over a second surface of the intrinsic layer.  
   
   
       14 . A method for applying a voltage to a photosensor device, the photosensor device comprising: 
 an intrinsic layer;    a positively doped layer;    an electrically conductive layer adjacent to the positively doped layer; and    a negatively doped layer adjacent to the intrinsic layer;    wherein the intrinsic layer, the positively doped layer, the negatively doped layer and the electrically conductive layer are functionally divided into a plurality of semiconductor structures; the method comprising:    applying a voltage to a selected semiconductor structure from the plurality of semiconductor structures;    causing drifting of electrons from the negatively doped layer, through the intrinsic layer, and into the positively doped layer; and    conducting the drifted electrons to the electrically conductive layer such that the voltage is applied to at least one of the other semiconductor structures.    
   
   
       15 . The method of  claim 14 , wherein: 
 the photosensor device further includes an electrical circuit connected to the selected semiconductor structure; and    the method further comprises reducing an effective resistance of the selected semiconductor structure using the electrical circuit.    
   
   
       16 . The method of  claim 14 , wherein: 
 the photosensor device further includes a guard ring; and    the method further comprises grounding dark currents generated by the selected semiconductor structure using the guard ring.    
   
   
       17 . The method of  claim 14 , wherein: 
 the photosensor device further comprises an electrical circuit connected to the selected semiconductor structure; and    the method further comprises reducing an effective resistance of the selected semiconductor structure using an electrical circuit connected to the selected semiconductor structure.    
   
   
       18 . A multi-element semiconductor device to which a voltage is to be applied, comprising: 
 a plurality of layers, including at least a first electrode layer and a first semiconductor layer, wherein:    the plurality of layers are functionally divided into a plurality of semiconductor structures, the voltage being applied to at least one of the semiconductor structures by the first electrode layer;    a selected one of the semiconductor structures is connected to a voltage source for the voltage, the selected semiconductor structure connecting the voltage source to at least the first electrode layer through at least the first semiconductor layer.    
   
   
       19 . The multi-element semiconductor device of  claim 18 , further comprising a circuit reducing an effective resistance of the selected one of the semiconductor structures.  
   
   
       20 . The multi-element semiconductor device of  claim 18 , further comprising a grounded guard ring that is part of the multi-element semiconductor device and that is located between the selected one of the semiconductor structures and at least some of the other semiconductor structures.