Deposition methods

Abstract

A deposition method includes contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on the substrate. At least a part of the substrate is contacted with a second initiation precursor different from the first initiation precursor and a second portion of the initiation layer is formed on the substrate. The substrate may be simultaneously contacted with a plurality of initiation precursors, forming on the substrate and initiation layer comprising components, derived from each of the plurality of initiation precursors. An initiation layer may be contacted with a deposition precursor, forming a deposition layer on the initiation layer. The deposition layer may be contacted with a second initiation precursor different from the first initiation precursor forming a second initiation layer over the substrate. Also, a first initiation layer may be formed substantially selectively on a first-type substrate surface relative to a second-type substrate surface and contacted with a deposition precursor, forming a deposition layer substantially selectively over the first-type substrate surface.

1 - 48 . (canceled)  
     
     
         49 . A deposition method comprising: 
 contacting a substrate with a first initiation precursor and forming a first portion of an initiation layer on at least a first region of the substrate, the substrate comprising a semiconductor material; and    contacting at least a second region of the substrate with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on at least the second region, the second portion of the initiation layer forming at a greater rate over the second region than a rate at which the first portion of the initiation layer formed over the second region.    
     
     
         50 . The deposition method of  claim 49 , wherein the initiation layer consists essentially of a monolayer of the first and second initiation precursors.  
     
     
         51 . The deposition method of  claim 49 , wherein the contacting with the first initiation precursor and the contacting with the second initiation precursor occur simultaneously.  
     
     
         52 . The deposition method of  claim 49 , wherein substantially all of the first portion of the initiation layer is continuous and at least some of the second portion of the initiation layer is not continuous.  
     
     
         53 . The deposition method of  claim 49 , wherein the second portion of the initiation layer does not form over the first portion of the initiation layer.  
     
     
         54 . The deposition method of  claim 49 , wherein forming the second portion of the initiation layer substantially fills holes in the first portion of the initiation layer.  
     
     
         55 . The deposition method of  claim 49 , further comprising contacting the first and second portions of the initiation layer with a deposition precursor and forming a deposition layer on the first and second portions of the initiation layer.  
     
     
         56 . The deposition method of  claim 55 , further comprising contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.  
     
     
         57 . The deposition method of  claim 49 , wherein the first portion of the initiation layer forms to a greater degree over the first region of the substrate than over the second region.  
     
     
         58 . The deposition method of  claim 49 , wherein the first portion of the initiation layer forms at a greater rate over the first region of the substrate than over the second region.  
     
     
         59 . The deposition method of  claim 49 , wherein the first portion forms more uniformly over the first region of the substrate than over the second region.  
     
     
         60 . A deposition method comprising: 
 providing a substrate having a first region and second region, the first and second regions each having a property causing a difference between formation rates of an initiation layer by a first initiation precursor over the first region compared to the second region, the substrate comprising a semiconductor material;    contacting the substrate with the first initiation precursor and forming the initiation layer on the first region; and    contacting at least the second region with a second initiation precursor and forming the initiation layer on the second region, but not over the first region.    
     
     
         61 . The deposition method of  claim 60 , wherein the semiconductor material comprises a bulk silicon wafer, the first region comprises an insulative material, and the second region comprises a capacitor storage node.  
     
     
         62 . The deposition method of  claim 60 , wherein the initiation layer consists essentially of a monolayer on the first and second region.  
     
     
         63 . The deposition method of  claim 60 , wherein the first initiation precursor forms a negligible, if any, amount of the initiation layer on the second region.  
     
     
         64 . The deposition method of  claim 60 , wherein contacting with the first initiation precursor and contacting with the second initiation precursor occur simultaneously.  
     
     
         65 . The deposition method of  claim 60 , wherein either the first or the second region is insulative and the other is conductive.  
     
     
         66 . The deposition method of  claim 60 , wherein forming the initiation layer on the second region substantially fills holes in the initiation layer on the first region.  
     
     
         67 . The deposition method of  claim 60 , further comprising contacting the initiation layer on the first and second regions with a deposition precursor and forming a deposition layer on the initiation layer on the first and second regions.  
     
     
         68 . The deposition method of  claim 67 , further comprising contacting the deposition layer with a third initiation precursor different from both the first and second initiation precursor and forming a second initiation layer on the deposition layer.  
     
     
         69 . The deposition method of  claim 67 , wherein the deposition layer comprises aluminum oxide.  
     
     
         70 . A deposition method comprising: 
 contacting a substrate containing a semiconductor material with a first initiation precursor and forming a first portion of an initiation layer on at least a first region of the substrate, the first portion of the initiation layer forming to a greater degree over the first region than over a second region of the substrate; and    contacting at least the second region with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on at least the second region.    
     
     
         71 . A deposition method comprising: 
 contacting a substrate containing a semiconductor material with a first initiation precursor and forming a first portion of an initiation layer on at least a first region of the substrate, the first portion forming at a greater rate over the first region than over a second region of the substrate; and    contacting at least the second region with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on at least the second region.    
     
     
         72 . A deposition method comprising: 
 contacting a substrate containing a semiconductor material with a first initiation precursor and forming a first portion of an initiation layer on at least a first region of the substrate, the first portion forming more uniformly over the first region than over a second region of the substrate; and    contacting at least the second region with a second initiation precursor different from the first initiation precursor and forming a second portion of the initiation layer on at least the second region.