Semiconductor device

Abstract

An electrode on a main surface of a module board, to which an emitter electrode of a semiconductor chip formed with a switching element of a power supply control circuit that supplies a power supply voltage to amplifier circuit parts of a power module of a digital cellular phone is electrically connected to a wiring in an internal layer of the module board through a plurality of viaholes. Further, the wiring CL 1 is electrically connected to an electrode for the supply of the power supply voltage, which is provided on a back surface of the module board. Accordingly, an output characteristic of the semiconductor device is improved.

1 - 11 . (canceled)  
     
     
         12 . A semiconductor device, comprising: 
 a first semiconductor chip including a bipolar transistor of a power supply control circuit that converts a first voltage to a second voltage;    a second semiconductor chip including an amplifier circuit using the second voltage as a power supply; and    a wiring board equipped with the first and second semiconductor chips,    wherein the wiring board includes a first surface over which the first and second semiconductor chips are mounted, and a second surface provided at the side opposite to the first surface,    wherein a first electrode for an emitter electrode of the bipolar transistor and a second electrode for a collector electrode of the bipolar transistor are provided over the first surface,    wherein a third electrode for the first voltage, which is electrically connected to the first electrode through the wiring path of the wiring board, and a fourth electrode for the second voltage, which is electrically connected to the second electrode through the wiring path in the wiring board are provided over the second surface, and    wherein the third electrode and the fourth electrodes are disposed adjacent to each other.    
     
     
         13 . A semiconductor device according to  claim 12 , wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the first electrode of the first surface and the third electrode of the second surface to each other, and a plurality of the connecting portions are bonded to the first electrode and the third electrode.  
     
     
         14 . A semiconductor device according to  claim 12 , wherein the emitter electrode provided in the first semiconductor chip and the first electrode of the wiring board are electrically connected to each other by bonding wires.  
     
     
         15 . A semiconductor device according to  claim 14 , wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the first electrode of the first surface and the third electrode of the second surface to each other, a plurality of the connecting portions are bonded to the first electrode and the third electrode, and each of the bonding wires is bonded to an area of the first electrode, to which the connecting portions are not bonded.  
     
     
         16 . A semiconductor device according to  claim 12 , wherein connecting portions extending in the direction intersecting the first and second surfaces of the wiring board are provided in a wiring path which electrically connects the second electrode of the first surface and the fourth electrode of the second surface to each other, and a plurality of the connecting portions are bonded to the second electrode and the fourth electrode.  
     
     
         17 . A semiconductor device according to  claim 12 , wherein the third electrode of the second surface of the wiring board is provided directly below the emitter electrode of the first semiconductor chip over the first surface.  
     
     
         18 - 20 . (canceled)