US2006264061A1PendingUtilityA1

Solid source precursor delivery system

59
Individually held — no corporate assignee on recordPriority: Jan 30, 2004Filed: Jul 28, 2006Published: Nov 23, 2006
Est. expiryJan 30, 2024(expired)· nominal 20-yr term from priority
Inventors:Garo Derderian
C23C 16/4481
59
PatentIndex Score
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Cited by
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References
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Claims

Abstract

A solid source precursor material is delivered to a deposition chamber in vaporized form by utilizing a solid source precursor delivery system having either single or multiple stations(s) having a collection/delivery reservoir that is an intermediate stage between a solid source reservoir and a processing deposition chamber. Each collection/delivery reservoir transitions between a collection phase of the solid precursor and the delivery stage of the vaporized precursor during the deposition of a film.

Claims

exact text as granted — not AI-modified
1 . A deposition material delivery method for a semiconductor fabrication process comprising: 
 heating a solid source chemical precursor material to a boiling phase to form vapor particles thereof;    transporting the vapor particles to a collection/delivery reservoir;    sufficiently cooling the collection/delivery reservoir to convert the vapor particles to solid particles, a buildup of which is collected on a fin-shaped structure within the collection/delivery reservoir;    vaporizing the solid particles to form a vaporized chemical deposition material by sufficiently heating the collection/delivery reservoir; and    delivering the vaporized chemical deposition material directly to a processing chamber.    
   
   
       2 . The method of  claim 1 , further comprising the addition of an inert gas or a deposition gas to the vapor particles.  
   
   
       3 . The method of  claim 1 , wherein the semiconductor fabrication process is a chemical vapor deposition process.  
   
   
       4 . The method of  claim 1 , wherein the semiconductor fabrication process is an atomic layer deposition process.  
   
   
       5 . The method of  claim 1 , wherein the transporting of vapor particles comprises transporting the vapor particles via a transport line that is sufficiently heated to prevent the vapor particles from solidifying in the transport line.  
   
   
       6 . The method of  claim 5 , wherein the sufficiently heated transport line is heated to a temperature that avoids significant thermal decomposition of the vapor particles.  
   
   
       7 . The method of  claim 6 , wherein the significant thermal decomposition comprises a decomposition of the vapor particles of around 1% or less.  
   
   
       8 . A deposition material delivery method for a semiconductor fabrication process comprising: 
 heating a solid source chemical precursor material to a boiling phase to form vapor particles thereof;    transporting the vapor particles to multiple stations, each station having a collection/delivery unit that operates in a solid precursor collection phase and a vaporized precursor delivery phase;    sufficiently cooling each collection/delivery unit operating in the solid precursor collection phase to convert the vapor particles to solid particles, which are collected on fin-shaped structures in at least a first and a second station of the multiple stations;    sufficiently heating each collection/delivery unit operating in the vaporized precursor delivery phase to vaporize the solid particles in at least the first and second stations to form first and second volumes of vaporized deposition material, respectively;    delivering the first volume of vaporized chemical deposition material directly to a processing chamber from the first station;    delivering the second volume of vaporized chemical deposition material directly to a processing chamber from the second station while collecting another buildup of solid particles in the first station; and    cycling between the multiple stations from a solid precursor collection phase and a vaporized precursor delivery phase so that sufficient vaporized chemical deposition material is delivered to the processing chamber for depositing a layer of material on a substrate.    
   
   
       9 . The method of  claim 8 , wherein the semiconductor fabrication process is a chemical vapor deposition process.  
   
   
       10 . The method of  claim 8 , wherein the semiconductor fabrication process is an atomic layer deposition process.  
   
   
       11 . The method of  claim 8 , further comprising transporting the vapor particles via multiple transport lines that are sufficiently heated to prevent the source precursor material from solidifying in the transport lines.  
   
   
       12 . The method of  claim 11 , wherein the sufficiently heated transport lines are heated to a temperature that prevents significant thermal decomposition of the vapor particles.  
   
   
       13 . The method of  claim 12 , wherein the significant thermal decomposition comprises a decomposition of the vapor particles of around  1 % or less.  
   
   
       14 . The method of  claim 8 , further comprising the addition of an inert gas or a deposition gas to the vapor particles.  
   
   
       15 . A deposition material delivery method for a semiconductor fabrication process comprising: 
 heating a solid source chemical precursor material to a boiling phase to form vapor precursor particles thereof;    transporting the vapor precursor particles to multiple stations, each station having a collection/delivery unit that operates in a solid precursor collection phase or a vaporized precursor delivery phase; and    cycling the multiple stations between the solid precursor collection phase and the vaporized precursor delivery phase such that at least one collection/delivery unit is converting the vapor precursor particles into solid precursor particles that are collected on an inner fin-shaped structure within each station and at least one collection/delivery unit is converting the solid precursor particles into a volume of vaporized precursor particles so that a sufficient amount of vaporized precursor particles is delivered to the processing chamber for depositing a layer of material on a substrate.    
   
   
       16 . The method of  claim 15 , wherein the semiconductor fabrication process is a chemical vapor deposition process.  
   
   
       17 . The method of  claim 15 , wherein the semiconductor fabrication process is an atomic layer deposition process.  
   
   
       18 . The method of  claim 15 , further comprising transporting the vapor precursor particles via multiple transport lines that are sufficiently heated to prevent the vapor precursor particles from solidifying in the transport lines.  
   
   
       19 . The method of  claim 18 , wherein the sufficiently heated transport lines are heated to a temperature that prevents significant thermal decomposition of the vapor precursor particles.  
   
   
       20 . The method of  claim 19 , wherein the significant thermal decomposition comprises a decomposition of the vapor particles of around 1% or less.  
   
   
       21 . The method of  claim 15 , further comprising the addition of an inert gas or a deposition gas to the vapor precursor particles.  
   
   
       22 . A method for depositing a film on a substrate using a solid source precursor during semiconductor fabrication process comprising: 
 heating a solid source precursor to a boiling phase to form vapor particles thereof;    transporting the vapor particles to a collection/delivery reservoir;    sufficiently cooling the collection/delivery reservoir to convert the vapor particles to solid particles, a buildup of which is collected on a fin-shaped structure within the collection/delivery reservoir;    sufficiently heating the collection/delivery reservoir to convert the solid particles to re-vaporizing particles;    delivering the re-vaporized particles directly to a processing chamber while avoiding decomposition thereof; and    depositing the film on the substrate.    
   
   
       23 . The method of  claim 22 , wherein the semiconductor fabrication process is a chemical vapor deposition process.  
   
   
       24 . The method of  claim 22 , wherein the semiconductor fabrication process is an atomic layer deposition process.  
   
   
       25 . The method of  claim 22 , wherein transporting the vapor particles to a collection/delivery reservoir comprises a transport line that is sufficiently heated to prevent the vapor particles from solidifying in the transport line.  
   
   
       26 . The method of  claim 25 , wherein the sufficiently heated transport line is heated to a temperature that prevents significant thermal decomposition of the vapor particles.  
   
   
       27 . The method of  claim 26 , wherein the significant thermal decomposition comprises a decomposition of the vapor particles of around 1% or less.

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