Bladed rotor wheel for reinforcing blade locking

Abstract

An epoxy resin composition for encapsulating semiconductors including (A) an epoxy resin, (B) a phenol resin, (C) an inorganic filler, (D) a curing promoter, and (E) a surface-treated coloring agent, wherein the coloring agent before the surface treatment is a carbon precursor with a carbon content of 90 wt % or more or carbon black having a DBP absorption of 100 cm 3/100 g or more, and a semiconductor device encapsulated with the epoxy resin composition. The epoxy resin composition can produce semiconductors which are free from electrical failures such as a short circuit, a leak current, and the like, do not induce wire deformation, and exhibits excellent laser marking characteristics.

1 . An epoxy resin composition for encapsulating semiconductors comprising (A) an epoxy resin, (B) a phenol resin, (C) an inorganic filler, (D) a curing promoter, and (E) a surface-treated coloring agent, wherein the coloring agent before the surface treatment is a carbon precursor with a carbon content of 90 wt % or more or carbon black having a DBP absorption of 100 cm 3 /100 g or more.  
   
   
       2 . The epoxy resin composition for semiconductor encapsulating according to  claim 1 , wherein the surface treatment is an oxidation treatment.  
   
   
       3 . The epoxy resin composition for encapsulating semiconductors according to  claim 1 , wherein water extracted from the surface-treated coloring agent (E) has a pH of 2 to 5.  
   
   
       4 . The epoxy resin composition for encapsulating semiconductors according to  claim 1 , wherein the surface treatment is an oxidation treatment using an acidic liquid containing one or more acids selected from the group consisting of a peroxodisulfate, hydrogen peroxide aqueous solution, sulfuric acid, nitric acid, hypochlorite, chloric acid, chlorous acid, and permanganate.  
   
   
       5 . The epoxy resin composition for encapsulating semiconductors according to  claim 1 , wherein the carbon black has a primary particle diameter of 40 to 90 nm.  
   
   
       6 . The epoxy resin composition for encapsulating semiconductors according to  claim 1 , wherein the carbon black has a nitrogen adsorption specific surface area of 20 to 100 m 2 /g.  
   
   
       7 . The epoxy resin composition according to  claim 1 , wherein the carbon precursor has a specific resistance of 1×10 2  Ω·cm to 1×10 7  Ω·cm.  
   
   
       8 . The epoxy resin composition for encapsulating semiconductors according to  claim 1 , wherein the content of unsieved components when the surface-treated coloring agent (E) is sieved through a screen with openings of 25 μm is 0 wt %.  
   
   
       9 . A. semiconductor device comprising a semiconductor element encapsulated using the epoxy resin composition according to  claim 1.