Vapor deposition of benzotriazole (BTA) for protecting copper interconnects

Abstract

A method of protecting an interconnect is provided. The method includes forming an integrated circuit structure having an interconnect, and depositing vaporized benzotriazole on the interconnect.

1 - 14 . (canceled)  
   
   
       15 . An integrated circuit structure, comprising: 
 a first interconnect having a first surface; and    a first layer of benzotriazole formed on the first surface of the first interconnect, the first layer of benzotriazole being formed using vapor deposition of benzotriazole on the first surface of the first interconnect.    
   
   
       16 . The integrated circuit structure of claim  0 , wherein the first layer of benzotriazole comprises a substantially uniform distribution of benzotriazole molecules.  
   
   
       17 . The integrated circuit structure of claim  0 , first comprising: 
 a first metalization layer, wherein the first interconnect is formed in the first metalization layer;    a second metalization layer;    a second interconnect formed in the second metalization layer, the second interconnect having a first surface; and    a second layer of benzotriazole formed on the first surface of the second interconnect, the second layer of benzotriazole being formed using vapor deposition of benzotriazole on the first surface of the second interconnect.    
   
   
       18 . A system for protecting an interconnect, comprising: 
 a vapor deposition chamber operable to receive an integrated circuit structure having an interconnect and deposit vaporized benzotriazole onto the interconnect.    
   
   
       19 . The system of  claim 18 , further comprising: 
 a benzotriazole chamber operable to heat liquid benzotriazole to form vaporized benzotriazole.    
   
   
       20 . The system of  claim 19 , wherein the vapor deposition chamber is further operable to receive vaporized benzotriazole from the benzotriazole chamber.  
   
   
       21 . The system of  claim 19 , further comprising: 
 a benzotriazole reservoir coupled to the benzotriazole chamber, the benzotriazole reservoir operable to store benzotriazole and communicate benzotriazole to the benzotriazole chamber to control the amount of benzotriazole within the benzotriazole chamber.    
   
   
       22 . The system of  claim 19 , wherein: 
 the benzotriazole chamber is operable to receive an inert carrier gas and allow the inert carrier gas to combine with the vaporized benzotriazole; and    the vapor deposition chamber is further operable to apply the combined vaporized benzotriazole and inert carrier gas onto the integrated circuit structure.    
   
   
       23 . The system of  claim 22 , wherein the benzotriazole chamber is operable to control the concentration of the vaporized benzotriazole relative to the inert carrier gas to obtain a desired concentration of vaporized benzotriazole.  
   
   
       24 . The system of  claim 19 , wherein: 
 the benzotriazole chamber is operable to allow a carrier gas to bubble through liquid benzotriazole to form a combination of vaporized benzotriazole and the carrier gas; and    the vapor deposition chamber is further operable to apply the combined vaporized benzotriazole and inert carrier gas onto the integrated circuit structure.    
   
   
       25 . The system of  claim 18 , wherein the vapor deposition chamber comprises a vacuum chamber operable to receive liquid benzotriazole to create vaporized benzotriazole.  
   
   
       26 . The system of  claim 18 , further comprising: 
 a chemical mechanical polish (CMP) chamber for performing a CMP cleaning process on the integrated circuit structure;    a wet tank for applying liquid benzotriazole to the integrated circuit structure; and    a cleaning chamber for performing a post-CMP cleaning process on the integrated circuit structure prior to the vapor deposition of benzotriazole on the interconnect.    
   
   
       27 . The system of  claim 18 , wherein the vapor deposition chamber is further operable to deposit vaporized isopropyl alcohol onto the interconnect.  
   
   
       28 . The system of  claim 27 , wherein the vaporized benzotriazole and the vaporized isopropyl alcohol are received into the vapor deposition chamber separately.  
   
   
       29 . The system of  claim 27 , wherein the vapor deposition chamber is operable to all of the vaporized benzotriazole and the vaporized isopropyl alcohol to be deposited onto the interconnect simultaneously.  
   
   
       30 . The system of  claim 18 , further comprising: 
 a vapor formation chamber operable to receive liquid benzotriazole and liquid isopropyl alcohol, and heat the liquid benzotriazole and liquid isopropyl alcohol to form vaporized benzotriazole and vaporized isopropyl alcohol; and    wherein the vapor deposition chamber is further operable to receive the vaporized benzotriazole and vaporized isopropyl alcohol such that the vaporized benzotriazole and vaporized isopropyl alcohol may be applied to the integrated circuit structure.    
   
   
       31 . The system of  claim 18 , further comprising an isopropyl alcohol deposition chamber for applying vaporized isopropyl alcohol to the integrated circuit structure.