UV solid light source of inorganic powder

Abstract

An inorganic powder uses a UV solid light source, in which an inorganic powder is based on the inorganic powder of n-silicate group II elements, and its ingredients have valence 2 ions, such as Eu +2 , Sm +2 , Yb +2 and Dy +2 , valence 3 ions Ce +3 , Tb +3 and/or Eu +3 . The chemical formula of the components is Me +2 1-x Ln +3 2-y Si 2 O 8 :TR +2 x :TR +3 y . A main structure thereof is a hexagonal crystal structure. When the indium gallium nitride and gallium nitride based allomorphous semiconductor short wave UV light is used under conditions of excitement, the multiple band white light can be obtained.

1 . A type of inorganic powder for a UV solid light source, the construction ingredients' chemical formula is  
         Me +2   1-x Ln +3   2-y Si 2 O 8 :TR +2   x :TR +3   y ,  
       wherein: 
 Me +2 =(wherein Mg +2 , Ca +2 , Sr +2 , Ba +2 , at least one or more); TR +2 =(wherein Sm +2 , Yb +2 , Eu +2 , Dy +2 , at least one or more); TR +3 =(wherein Tb +3 , Ce +3 , Eu +3 , Dy +3 , at least one or more); Ln +3 =(wherein Y +3 , La +3 , Gd +3 , Sc +3 , Lu +3 , at least one or more);  
 wherein a major configuration of an allomorphous surface of the solid light source is a hexagonal crystal structure, guaranteeing a solid light source allomorphous short wave, under UV light excitement, obtainment of multiple band white light.  
 
     
     
         2 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein ingredients form a cation sub lattice circulation system, and a concentration of each element is:  
         0≦Mg≦0.2; 0.4≦Ca≦0.8; 0.2≦Sr≦0.4; and 0.2≦Ba≦0.4.  
     
     
         3 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein an ingredient concentration relationship is Σ(Me +2 +TR +2 )=1.  
     
     
         4 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein contents of rare earth ion in the second cation node are:  
         0.5≦Y≦1.6; 1≦La≦0.4; 2≦Gd≦0.4; 1≦Sc≦0.2; and 0.1≦Lu≦0.2.  
     
     
         5 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein a rare earth element Ln +3  and partially replaced valence 3 catalyst concentration is Σ(Ln +3 +TR +3 )=2 atomic weight.  
     
     
         6 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein individual concentrations of the Ce +3 , Eu +3 , Tb +3 , and Dy +3  group valence 3 catalyst ions are about 0.001≦TR≦0.2 atomic weight.  
     
     
         7 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein a UV light excited Tb +3  rare earth element ion node light spectrum zone is λ=545±10 nm.  
     
     
         8 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein when the UV light excites Ce +3  ion, green-yellow light is obtained, and a spectrum wavelength is from about 525 nm to 575 nm.  
     
     
         9 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein after a UV light excited inorganic powder with Eu +3  and Dy +3  in is added, a main visible light spectrum is in visible light's yellow-orange zone.  
     
     
         10 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein when an inorganic powder material absorption spectrum is catalyzed by europium ion (Eu +2 ) samarium ion (Sm +2 ) ytterbium ion or a combination thereof, an absorption spectrum is in a blue-sky blue energy band, a radiation wavelength is in a green-sky blue sub-energy band of the spectrum and a half span wavelength of the radiation band is between about 40 nm and 80 nm.  
     
     
         11 . The inorganic powder for a UV solid light source as claimed in  claim 1 , forming the inorganic powder on the solid light source, the production procedure including: 
 preparing a polymer mixing materials, including melting glue, epoxy, silicone, or a combination thereof;    coating an allomorphous surface of the solid light source with inorganic powder;    welding the inorganic powder with amino allomorphous to a metal shell;    install a polymer lens cover; and    filling between a shell inside surface and an inorganic powder polymer coating layer with a polymer material.    
     
     
         12 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein the inorganic powder is coated on the allomorphous, layer by layer, when an inorganic powder suspended material concentration is at a minimum.  
     
     
         13 . The inorganic powder for a UV solid light source as claimed in  claim 1 , wherein an inorganic powder thickness is 30-40 micrometers, and for higher concentration inorganic powder suspended materials, a thickness may be an about 60-70 micrometers single layer coating on the allomorphous semiconductor surface.