US2007004064A1PendingUtilityA1

Electroluminescent device comprising porous silicon

Assignee: QINETIQ LTDPriority: Mar 20, 1995Filed: Jun 20, 2006Published: Jan 4, 2007

Est. expiryMar 20, 2015(expired)· nominal 20-yr term from priority

Inventors:Leigh Canham Timothy I. Cox Armando Loni Andrew Simons Richard Blacker

H10H 20/8264H10H 20/80

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Claims

Abstract

An electroluminescent device comprises a porous silicon region adjacent a bulk silicon region, together with a top electrical contact of transparent indium tin oxide and a bottom electrical contact of aluminium. The device includes a heavily doped region to provide an ohmic contact. The porous silicon region is fabricated by anodizing through an ion-implanted surface layer of the bulk silicon. The silicon remains unannealed between the ion-implantation and anodization stages. The device has a rectifying p-n junction within the porous silicon region.

Claims

exact text as granted — not AI-modified

1 - 23 . (canceled)  
   
   
       24 . P-type porous silicon, wherein the porous silicon has a porosity greater than 30%.  
   
   
       25 . P-type porous silicon according to claim  1 , wherein the porous silicon comprises quantum wires.  
   
   
       26 . P-type porous silicon according to claim  1 , wherein the porous silicon has a porosity greater than 60%.  
   
   
       27 . P-type porous silicon according to claim  1 , wherein the dopant is boron.

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