US2007020841A1PendingUtilityA1

Method of manufacturing gate structure and method of manufacturing semiconductor device including the same

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Assignee: HWANG KI-HYUNPriority: Jul 22, 2005Filed: Jul 21, 2006Published: Jan 25, 2007
Est. expiryJul 22, 2025(expired)· nominal 20-yr term from priority
Inventors:Ki-Hyun HwangWon-Jun JangJae Young AhnChang-Sup MunJung-Hyun Park
H10P 10/00H10D 84/0144H10D 84/0133H10D 84/038B82Y 10/00B82Y 40/00H10B 69/00H10B 41/30
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Claims

Abstract

In a method for manufacturing a semiconductor device, a silicon oxide layer is formed on a substrate. The silicon oxide layer is treated with a solution comprising ozone. Then, a conductive layer is formed on the silicon oxide layer treated with the solution.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing a gate structure, the method comprising: 
 forming a silicon oxide layer on a substrate;    treating the silicon oxide layer with a solution comprising ozone; and,    forming a conductive layer on the silicon oxide layer treated with the solution.    
     
     
         2 . The method of  claim 1 , wherein the solution further comprises de-ionized water.  
     
     
         3 . The method of  claim 2 , wherein a density of ozone in the solution is in a range between about 30 ppm and about 300 ppm.  
     
     
         4 . The method of  claim 1 , wherein the silicon oxide layer is treated with the solution for about 60 seconds to about 600 seconds.  
     
     
         5 . The method of  claim 1 , wherein the silicon oxide layer treated with the solution comprises a hydroxyl group (—OH).  
     
     
         6 . The method of  claim 5 , wherein the conductive layer comprises silicon.  
     
     
         7 . The method of  claim 6 , wherein the conductive layer comprises polysilicon or polysilicon germanium.  
     
     
         8 . The method of  claim 6 , wherein the conductive layer has a thickness with a root mean square value of about 0.4 nm to about 0.6 nm.  
     
     
         9 . A method of manufacturing a gate structure, the method comprising: 
 forming a gate oxide layer on a substrate;    treating the gate oxide layer with a solution comprising ozone;    forming a gate conductive layer on the gate oxide layer treated with the solution;    forming a mask layer on the gate conductive layer; and    forming a gate mask pattern, a gate conductive layer pattern, and a gate oxide layer pattern by patterning the mask layer, the gate conductive layer and the gate oxide layer.    
     
     
         10 . The method of  claim 9 , wherein the solution further comprises de-ionized water.  
     
     
         11 . The method of  claim 10 , wherein a density of ozone in the solution is in a range between about 30 ppm and about 300 ppm.  
     
     
         12 . The method of  claim 9 , wherein the gate oxide layer is treated with the solution for about 60 seconds to about 600 seconds.  
     
     
         13 . The method of  claim 9 , wherein the gate oxide layer treated with the solution comprises a hydroxyl group (—OH).  
     
     
         14 . The method of  claim 13 , wherein the gate conductive layer comprises polysilicon or polysilicon germanium.  
     
     
         15 . A method of manufacturing a gate structure, the method comprising: 
 forming a tunnel oxide layer on a substrate;    treating the tunnel oxide layer with a solution comprising ozone;    forming a floating gate layer on the tunnel oxide layer treated with the solution;    forming a dielectric layer on the floating gate layer;    forming a control gate layer on the dielectric layer; and,    forming a control gate, a dielectric layer pattern, a floating gate, and a tunnel oxide layer pattern by patterning the control gate layer, the dielectric layer, the floating gate layer and the tunnel oxide layer.    
     
     
         16 . The method of  claim 15 , wherein the solution further comprises de-ionized water.  
     
     
         17 . The method of  claim 16 , wherein a density of ozone in the solution is in a range between about 30 ppm and about 300 ppm.  
     
     
         18 . The method of  claim 9 , wherein the tunnel oxide layer treated with the solution comprises a hydroxyl group (—OH).  
     
     
         19 . The method of  claim 15 , wherein the floating gate layer comprises nano-crystalline particles.  
     
     
         20 . The method of  claim 19 , wherein a density of the nano-crystalline particles is in a range of about  10   12 /cm 2  to about  10   13 /cm 2 .  
     
     
         21 . The method of  claim 15 , wherein the floating gate has a U-shaped cross section.  
     
     
         22 . The method of  claim 21 , wherein the floating gate has a thickness of about 90 Å to about 110 Å.  
     
     
         23 . A method of manufacturing a non-volatile memory device, the method comprising: 
 forming a gate oxide layer on a substrate;    treating the gate oxide layer with a solution comprising ozone;    forming a gate conductive layer on the gate oxide layer treated with the solution;    forming a mask layer on the gate conductive layer;    forming a gate structure including a gate mask pattern, a gate conductive layer pattern, and a gate oxide layer pattern by patterning the mask layer, the gate conductive layer and the gate oxide layer;    forming an insulating interlayer to cover the gate structure;    forming a contact connected with the substrate through the insulating interlayer; and,    forming an upper wiring structure electrically connected with the contact.    
     
     
         24 . The method of  claim 23 , wherein the solution further comprises de-ionized water.  
     
     
         25 . The method of  claim 24 , wherein a density of ozone in the solution is in a range between about 30 ppm and about 300 ppm.  
     
     
         26 . The method of  claim 23 , wherein the gate oxide layer treated with the solution comprises a hydroxyl group (—OH).  
     
     
         27 . A method of manufacturing a non-volatile memory device comprising: 
 forming a tunnel oxide layer on a substrate;    treating the tunnel oxide layer with a solution comprising ozone;    forming a floating gate layer on the tunnel oxide layer treated with the solution;    forming a dielectric layer on the floating gate layer;    forming a control gate layer on the dielectric layer;    forming a gate structure including a control gate, a dielectric layer pattern, a floating gate, and a tunnel oxide layer pattern by patterning the control gate layer, the dielectric layer, the floating gate layer and the tunnel oxide layer;    forming an insulating interlayer to cover the gate structure;    forming a contact connected with the substrate through the insulating interlayer; and,    forming an upper wiring structure electrically connected with the contact.    
     
     
         28 . The method of  claim 27 , wherein the solution further comprises de-ionized water.  
     
     
         29 . The method of  claim 28 , wherein a density of ozone in the solution is in a range between about 30 ppm and about 300 ppm.  
     
     
         30 . The method of  claim 27 , wherein the tunnel oxide layer treated with the solution comprises a hydroxyl group (—OH).

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