Process for preparing p-n junctions having a p-type ZnO film

Abstract

A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 10 15 acceptors/cm 3 .

1 - 81 . (canceled)  
     
     
         82 . An oxide film on a substrate, the oxide film having a net acceptor concentration at least about 10 17  acceptors/cm 3 .  
     
     
         83 . The oxide film of  claim 82  having a resistivity of no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.  
     
     
         84 . The film of  claim 82  wherein the film includes an oxide compound selected from an oxide compound of a Group 2 element, an oxide compound of a Group 12 element, an oxide compound of Group 2 and Group 12 elements, and an oxide compound of Group 12 and Group 16 elements.  
     
     
         85 . The film of  claim 82  wherein the film is ZnO.  
     
     
         86 . The film of  claim 82  wherein the p-type dopant comprises an element selected from the group consisting of Group 1, Group 11, Group 5, and Group 15 elements.  
     
     
         87 . The film of  claim 82  wherein the p-type dopant comprises nitrogen.  
     
     
         88 . The film of  claim 82  wherein the p-type dopant comprises arsenic.  
     
     
         89 . The film of  claim 82  wherein the p-type dopant comprises phosphorus.  
     
     
         90 . The film of  claim 82  wherein the p-type dopant comprises antimony.  
     
     
         91 . The film of  claim 82  wherein the film is a component of a device selected from the group consisting of a light emitting diode, a laser diode, a p-n-p transistor, a n-p-n transistor, a field-effect transistor, a p-n junction, a photodetector, a transducer, and a light emitting device.  
     
     
         92 . An oxide film on a substrate, the oxide film having a net acceptor concentration at least about 10 15  acceptors/cm 3 , a resistivity between about 1 ohm-cm and  10   −4  ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.  
     
     
         93 . The film of  claim 92  wherein the film includes an oxide compound selected from an oxide compound of a Group 2 element, an oxide compound of a Group 12 element, an oxide compound of Group 2 and Group 12 elements, and an oxide compound of Group 12 and Group 16 elements.  
     
     
         94 . The film of  claim 92  wherein the film is ZnO.  
     
     
         95 . The film of  claim 92  wherein the p-type dopant comprises an element selected from the group consisting of Group 1, Group 11, Group 5, and Group 15 elements.  
     
     
         96 . The film of  claim 92  wherein the p-type dopant comprises nitrogen.  
     
     
         97 . The film of  claim 92  wherein the p-type dopant comprises arsenic.  
     
     
         98 . The film of  claim 92  wherein the p-type dopant comprises phosphorus.  
     
     
         99 . The film of  claim 92  wherein the p-type dopant comprises antimony.  
     
     
         100 . The film of  claim 92  wherein the film is a component of a device selected from the group consisting of a light emitting diode, a laser diode, a p-n-p transistor, a n-p-n transistor, a field-effect transistor, a p-n junction, a photodetector, a transducer, and a light emitting device.  
     
     
         101 . An oxide semiconductor film comprising a p-type dopant that is a layer in a semiconductor device formed on a substrate, the oxide semiconductor film having a net acceptor concentration at least about 10 17  acceptors/cm 3 .  
     
     
         102 . The film of  claim 101  having a resistivity of no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.  
     
     
         103 . The film of  claim 101  wherein the film is formed on a substrate.  
     
     
         104 . The film of  claim 101  wherein the film is formed on a device for attaching electrical leads.  
     
     
         105 . The film of  claim 101  wherein the film includes an oxide compound selected from an oxide compound of a Group 2 element, an oxide compound of a Group 12 element, an oxide compound of Group 2 and Group 12 elements, and an oxide compound of Group 12 and Group 16 elements.  
     
     
         106 . The film of  claim 101  wherein the film is ZnO.  
     
     
         107 . The film of  claim 101  wherein the p-type dopant comprises an element selected from the group consisting of Group 1, Group 11, Group 5, and Group 15 elements.  
     
     
         108 . The film of  claim 101  wherein the p-type dopant comprises nitrogen.  
     
     
         109 . The film of  claim 101  wherein the p-type dopant comprises arsenic.  
     
     
         110 . The film of  claim 101  wherein the p-type dopant comprises phosphorus.  
     
     
         111 . The film of  claim 101  wherein the p-type dopant comprises antimony.  
     
     
         112 . The film of  claim 101  wherein the semiconductor device is selected from the group consisting of a light emitting diode, a laser diode, a p-n-p transistor, a n-p-n transistor, a field-effect transistor, a p-n junction, a photodetector, a transducer, and a light emitting device.  
     
     
         113 . The film of  claim 101  wherein the film has a resistivity between about 1 ohm-cm and about 10 −4  ohm-cm.  
     
     
         114 . An oxide semiconductor film comprising a p-type dopant that is a layer in a semiconductor device formed on a substrate, the oxide semiconductor film having a net acceptor concentration of at least about 10 15  acceptors/cm 3 , a resistivity of no greater than about 1 ohm-cm, and a Hall Mobility of between about 0.1 and about 50 cm 2 /Vs.  
     
     
         115 . The film of  claim 114  wherein the film is formed on a substrate.  
     
     
         116 . The film of  claim 114  wherein the film is formed on a device for attaching electrical leads.  
     
     
         117 . The film of  claim 114  wherein the film includes an oxide compound selected from an oxide compound of a Group 2 element, an oxide compound of a Group 12 element, an oxide compound of Group 2 and Group 12 elements, and an oxide compound of Group 12 and Group 16 elements.  
     
     
         118 . The film of  claim 114  wherein the film is ZnO.  
     
     
         119 . The film of  claim 114  wherein the p-type dopant comprises an element selected from the group consisting of Group 1, Group 11, Group 5, and Group 15 elements.  
     
     
         120 . The film of  claim 114  wherein the p-type dopant comprises nitrogen.  
     
     
         121 . The film of  claim 114  wherein the p-type dopant comprises arsenic.  
     
     
         122 . The film of  claim 114  wherein the p-type dopant comprises phosphorus.  
     
     
         123 . The film of  claim 114  wherein the p-type dopant comprises antimony.  
     
     
         124 . The film of  claim 114  wherein the semiconductor device is selected from the group consisting of a light emitting diode, a laser diode, a p-n-p transistor, a n-p-n transistor, a field-effect transistor, a p-n junction, a photodetector, a transducer, and a light emitting device.  
     
     
         125 . The film of  claim 114  wherein the film has a resistivity between about 1 ohm-cm and about 10 −4  ohm-cm.