Container, a packaging body, manufacturing method of a container, manufacturing method of a packaging body, and a compound semiconductor substrate

Abstract

The invention relates to a container used to store a compound semiconductor substrate where the content of tin in the container is 1 ppm or less. Further, it relates to a container used to store a compound semiconductor substrate where the content of silicon in the container is 1 ppm or less. Further, it relates to a packaging body used to store a compound semiconductor substrate, where the content of tin in the packaging body is 1 ppm or less. Further, it relates to a manufacturing method of the container and the packaging body and a compound semiconductor substrate stored in the container and the packaging body.

1 . A container used to store a compound semiconductor substrate, where the content of tin in the container is 1 ppm or less.  
   
   
       2 . The manufacturing method of the container as in  claim 1  comprising the steps of selecting a resin composition and forming the container using the selected resin composition.  
   
   
       3 . A container used to store a compound semiconductor substrate, where the content of silicon in the container is 1 ppm or less.  
   
   
       4 . The manufacturing method of the container as in  claim 3  comprising the steps of selecting a resin composition and forming the container using the selected resin composition.  
   
   
       5 . A packaging body used to store a compound semiconductor substrate, where the content of tin in the packaging body is 1 ppm or less.  
   
   
       6 . The manufacturing method of the packaging body as in  claim 5  comprising the steps of selecting a sheet and forming the packaging body using the selected sheet.  
   
   
       7 . A packaging body used to store a compound semiconductor substrate, where the packaging body comprises a plurality of layers, the plurality of layers comprises at least one layer which restrains the transmission of tin, and the content of tin in all the layers located more inside than the inner most layer of the layers which restrain the transmission of tin is 1 ppm or less.  
   
   
       8 . The manufacturing method of the packaging body as in  claim 7  comprising the steps of selecting a sheet and forming the packaging body using the selected sheet.  
   
   
       9 . A compound semiconductor substrate stored in at least one kind selected from a group comprising the container as in  claim 1 , the container as in  claim 3 , the packaging body as in  claim 5 , and the packaging body as in  claim 7 , and placed in a nitrogen environment.