Chemical mechanical polishing apparatus and a method for planarizing/polishing a surface

Abstract

The present invention provides a method for planarizing/polishing a surface, a method for manufacturing an integrated circuit and a chemical mechanical polishing apparatus. The method for planarizing/polishing a surface, among other elements, includes providing a chemical mechanical polishing apparatus ( 200, 300, 400 ) having a polishing platen ( 210, 310, 410 ), a carrier head ( 220, 320, 420 ) positioned over the polishing platen ( 210, 310, 410 ), and a slurry delivery source ( 230, 330, 430 ) positioned over and off center the polishing platen ( 210, 310, 410 ), and rotating the polishing platen ( 210, 310, 410 ) in a direction (R p2 , R p3 , R p4 ) such that slurry exiting the slurry delivery source ( 230, 330, 430 ) and contacting the polishing platen ( 210, 310, 410 ) must rotate an angle (θ 2 , θ 3 , θ 4 ) less than about 220 degrees before contacting a polishable surface maintained by the carrier head ( 220, 320, 420 ).

1 . A method for planarizing/polishing a surface, comprising: 
 providing a chemical mechanical polishing apparatus having a polishing platen, a carrier head positioned over the polishing platen, and a slurry delivery source positioned over and off center of the polishing platen; and    rotating the polishing platen in a direction such that slurry exiting the slurry delivery source and contacting the polishing platen must rotate an angle (θ) less than about 220 degrees before contacting a polishable surface maintained by the carrier head.    
     
     
         2 . The method as recited in  claim 1  wherein the polishing platen must rotate an angle (θ) less than about 180 degrees.  
     
     
         3 . The method as recited in  claim 1  wherein the polishing platen must rotate an angle (θ) less than about 90 degrees.  
     
     
         4 . The method as recited in  claim 1  wherein the polishing platen must rotate an angle (θ) less than about 45 degrees.  
     
     
         5 . The method as recited in  claim 1  wherein the polishing platen is rotated in a clockwise direction.  
     
     
         6 . The method as recited in  claim 5  wherein the carrier head is rotated in a clockwise direction.  
     
     
         7 . The method as recited in  claim 1  wherein the chemical mechanical polishing apparatus further includes a polishing pad conditioner, and wherein the polishing pad conditioner is positioned such that the slurry exiting the slurry delivery source contacts the polishable surface before the polishing pad conditioner.  
     
     
         8 . The method as recited in  claim 1  wherein the chemical mechanical polishing apparatus is a single carrier head chemical mechanical polishing apparatus.  
     
     
         9 . The method as recited in  claim 8  wherein the single carrier head chemical mechanical polishing apparatus maintains more than one wafer each having a polishable surface.  
     
     
         10 . The method as recited in  claim 1  wherein the slurry delivery source is positioned within boundaries of a path created by the carrier head on the polishing platen.  
     
     
         11 . A method for manufacturing an integrated circuit, comprising: 
 forming a polishable surface over a wafer substrate; and    planarizing/polishing the polishable surface, the planarizing/polishing including; 
 placing the polishable surface in a carrier head positionable over a polishing platen of a chemical mechanical polishing apparatus; and  
 rotating the polishing platen in a direction such that slurry exiting a slurry delivery source must rotate an angle (θ) less than about 220 degrees before contacting the polishable surface, the slurry delivery source positioned over and off center of the polishing platen.  
   
     
     
         12 . The method as recited in  claim 11  wherein the polishing platen must rotate an angle (θ) less than about 180 degrees.  
     
     
         13 . The method as recited in  claim 11  wherein the polishing platen must rotate an angle (θ) less than about 90 degrees.  
     
     
         14 . The method as recited in  claim 11  wherein the polishing platen must rotate an angle (θ) less than about 45 degrees.  
     
     
         15 . The method as recited in  claim 11  wherein the polishing platen is rotated in a clockwise direction.  
     
     
         16 . The method as recited in  claim 11  wherein the chemical mechanical polishing apparatus further includes a polishing pad conditioner, and wherein the polishing pad conditioner is positioned such that the slurry exiting the slurry delivery source contacts the polishable surface before the polishing pad conditioner.  
     
     
         17 . The method as recited in  claim 11  wherein the chemical mechanical polishing apparatus is a single carrier head chemical mechanical polishing apparatus.  
     
     
         18 . The method as recited in  claim 11  wherein the polishable surface is an interconnect material.  
     
     
         19 . The method as recited in  claim 11  wherein the slurry delivery source is positioned within boundaries of a path created by the carrier head on the polishing platen.  
     
     
         20 . A chemical mechanical polishing apparatus, comprising: 
 a polishing platen;    a carrier head positionable over the polishing platen; and    a slurry delivery source positionable over and off center the polishing platen, the polishing platen configured to rotate in a direction such that slurry exiting the slurry delivery source and contacting the polishing platen must rotate an angle (θ) less than about 220 degrees before contacting a polishable surface maintained by the carrier head.    
     
     
         21 . A method for polishing a semiconductor wafer, comprising: 
 providing a semiconductor wafer; and    polishing the semiconductor wafer, the polishing including; 
 placing the semiconductor wafer in a carrier head positionable over a polishing platen of a chemical mechanical polishing apparatus; and  
 rotating the polishing platen in a direction such that slurry exiting a slurry delivery source must rotate an angle (θ) less than about 220 degrees before contacting the polishable surface, the slurry delivery source positioned over and off center of the polishing platen.