Forming a dielectric layer using a hydrocarbon-containing precursor

Abstract

In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

1 . A precursor comprising: 
 silicon;    a first functional group comprising an organic porogen, the first functional group attached to the silicon; and    a sacrificial functional group attached to the silicon.    
   
   
       2 . The precursor of  claim 1 , further comprising a first alkoxy group attached to the silicon and a second alkoxy group attached to the silicon.  
   
   
       3 . The precursor of  claim 1 , wherein the sacrificial functional group fragments preferentially.  
   
   
       4 . The precursor of  claim 1 , wherein the first functional group comprises a group stabilized against beta-hydride elimination.  
   
   
       5 . The precursor of  claim 1 , wherein the first functional group comprises a polydentate ligand.