Heat activated nanometer-scale pump

Abstract

A pump is provided that includes a nanometer-scale beam that is suspended in a housing. The housing may include a number of apertures such that molecules can move in and out of the housing. The nanometer-scale beam may be suspended as a jump rope or as a cantilever. The movement of the nanometer-scale beam may be mechanically stopped from moving in a particular way (e.g., towards a particular end of the housing). Thus, for example, the beam and the stop work together to pump molecules in the direction that the beam bounces off the stop. The speed and movement of the nanometer-scale beam can also be influenced either electrostatically or electromagnetically. As such, the speed and direction that a working substance is pumped by a nanometer-scale beam may be electrically controlled.

1 . A system comprising: 
 a housing having a plurality of windows; and    a nanometer-scale beam having at least one portion that is free-to-move, but inoperable to move through at least one of said plurality of windows due to a mechanical stop.    
   
   
       2 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a nanometer-scale beam coupled to said base and having a portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and    a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein said limited motion of said free-moving portion alters the average velocity of said working substance.    
   
   
       3 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a cantilever configuration.  
   
   
       4 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a jump rope configuration.  
   
   
       5 . The system of  claim 2 , wherein said free-moving portion is operable to move into a position that is substantially parallel to said base.  
   
   
       6 . The system of  claim 2 , wherein said free-moving portion is operable to move into a position that is substantially parallel to said base and said mechanical stop is located in a position that is substantially vertical to said base.  
   
   
       7 . The system of  claim 2 , wherein said mechanical stop is the only structure limiting the movement of said free-moving portion and said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side.  
   
   
       8 . The system of  claim 2 , wherein said mechanical stop is the only structure limiting the movement of said free-moving portion, said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side and said nanometer-scale beam includes a stationary portion that is coupled to said base via a mounting.  
   
   
       9 . The system of  claim 2 , wherein said mechanical stop comprises a layer of carbon.  
   
   
       10 . The system of  claim 2 , wherein said mechanical stop is thicker than said nanometer-scale beam.  
   
   
       11 . The system of  claim 2 , wherein said mechanical stop is cylindrical in shape.  
   
   
       12 . The system of  claim 2 , wherein said mechanical stop is fabricated from the same material as said nanometer-scale beam.  
   
   
       13 . The system of  claim 2 , wherein said mechanical stop is fabricated from a first material, said nanometer-scale beam is fabricated from a second material, and said first material has a greater stiffness per unit volume than said second material.  
   
   
       14 . The system of  claim 2 , wherein the longest dimension of said nanometer-scale stop is less than the longest dimension of said mechanical beam.  
   
   
       15 . The system of  claim 2 , wherein said nanometer-scale beam is immersed in a partial vacuum and a source of heat provides heat to said nanometer-scale beam to cause said free-moving portion to move.  
   
   
       16 . The system of  claim 2 , wherein thermal vibrations in said working substance or said nanometer-scale beam causes said free-moving portion to move.  
   
   
       17 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture.  
   
   
       18 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture and said nanometer-scale beam pumps a working substance from said input aperture to said output aperture.  
   
   
       19 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a housing having at least one input aperture and one output aperture, a working substance is pushed through said input aperture, and said nanometer-scale beam pumps said working substance through said output aperture.  
   
   
       20 . The system of  claim 2 , wherein said nanometer-scale beam is provided in a housing having at least two apertures.  
   
   
       21 . The system of  claim 2 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam.  
   
   
       22 . The system of  claim 2 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a microprocessor.  
   
   
       23 . The system of  claim 2 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a battery.  
   
   
       24 . The system of  claim 2 , further comprising a source of heat having an exhaust, wherein said exhaust is provided to said free-moving portion.  
   
   
       25 . The system of  claim 2 , wherein said nanometer-scale beam is a nanotube.  
   
   
       26 . The system of  claim 2 , wherein said nanometer-scale beam is a nanowire.  
   
   
       27 . The system of  claim 2 , wherein said nanometer-scale beam is not electrically conductive.  
   
   
       28 . The system of  claim 2 , wherein said mechanical stop is not electrically conductive.  
   
   
       29 . The system of  claim 2 , wherein said mechanical stop is electrically conductive.  
   
   
       30 . The system of  claim 2 , wherein said nanometer-scale beam is electrically conductive.  
   
   
       31 . The system of  claim 2 , wherein said nanometer-scale beam is electrically conductive and said nanometer-scale beam is electrically isolated by being suspended from at least one non-conductive mountings.  
   
   
       32 . The system of  claim 2 , wherein said mechanical stop is electrically conductive and said nanometer-scale beam is electrically conductive.  
   
   
       33 . The system of  claim 2 , wherein said mechanical stop is not electrically conductive and said nanometer-scale beam is electrically conductive.  
   
   
       34 . The system of  claim 2 , wherein said mechanical stop is electrically conductive and said mechanical stop is electrically isolated by being coupled only to a non-conductive layer.  
   
   
       35 . The system of  claim 2 , further comprising control circuitry for providing an electrical charge to said nanometer-scale beam.  
   
   
       36 . The system of  claim 2 , further comprising control circuitry for providing an electrical charge to said mechanical stop.  
   
   
       37 . The system of  claim 2 , further comprising control circuitry for providing an electrical charge to a charge member layer provided in the proximity of said free-moving portion.  
   
   
       38 . The system of  claim 2 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion and a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion.  
   
   
       39 . The system of  claim 2 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, and a third electrical charge to said nanometer-scale beam.  
   
   
       40 . The system of  claim 2 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, a third electrical charge to said nanometer-scale beam, and said control circuitry does not provide an electrical charge to said mechanical stop.  
   
   
       41 . The system of  claim 2 , wherein an electrical charge is provided to said nanometer-scale beam.  
   
   
       42 . The system of  claim 2 , wherein an electrical charge is provided to said mechanical stop.  
   
   
       43 . The system of  claim 2 , wherein an electrical charge is provided to a charge member layer located in the vicinity of said free-moving portion.  
   
   
       44 . The system of  claim 2 , further comprising a charge member layer located in the vicinity of said free-moving portion.  
   
   
       45 . The system of  claim 2 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion.  
   
   
       46 . The system of  claim 2 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a charge is provided to said charge member layer.  
   
   
       47 . The system of  claim 2 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having an opposite polarity is provided to said nanometer-scale beam.  
   
   
       48 . The system of  claim 2 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having the same polarity is provided to said nanometer-scale beam.  
   
   
       49 . The system of  claim 2 , further comprising a second mechanical stop positioned to limit the movement of said nanometer-scale beam.  
   
   
       50 . The system of  claim 2 , further comprising a second nanometer-scale beam having a second free-moving portion, wherein said mechanical stop limits the movement of said second nanometer-scale beam.  
   
   
       51 . The system of  claim 2 , wherein said base is spherical.  
   
   
       52 . The system of  claim 2 , wherein said base is spherical and said nanometer-scale beam provides thrust to move said spherical base.  
   
   
       53 . The system of  claim 2 , further comprising a magnetic field generator that provides a magnetic field on said nanometer-scale beam.  
   
   
       54 . The system of  claim 2 , further comprising a magnetic field generator that provides magnetic field on said nanometer-scale beam and a current is provided through said nanometer-scale beam to electromagnetically interact with said magnetic field.  
   
   
       55 . The system of  claim 2 , wherein said nanometer-scale beam is electrically influenced.  
   
   
       56 . The system of  claim 2 , wherein said nanometer-scale beam is electrically influenced electrostatically.  
   
   
       57 . The system of  claim 2 , wherein said nanometer-scale beam is electrically influenced electromagnetically.  
   
   
       58 . The system of  claim 2 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein the temperature of said heat is changed, said free-moving portion is moving, and said change in temperature changes the speed of said movement.  
   
   
       59 . The system of  claim 2 , wherein said nanometer-scale beam is operable to move both vertically and horizontally with respect to said base.  
   
   
       60 . The system of  claim 2 , where said plurality of molecules move, on average, at a zero velocity and said nanometer-scale beam impacting said mechanical stop causes said plurality of molecules to move, on average, at a non-zero velocity in a direction.  
   
   
       61 . The system of  claim 2 , wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction.  
   
   
       62 . The system of  claim 2 , wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction opposite the mechanical stop with respect to said nanometer-scale beam.  
   
   
       63 . A system comprising: 
 a housing;    a working substance having a plurality of molecules;    a plurality of nanometer-scale pumps immersed in said working substance and coupled to said housing, wherein said plurality of nanometer-scale pumps alters the average velocity of said working substance and each one of said nanometer-scale pumps comprises: 
 a nanometer-scale beam, having at least one portion that is free-to-move and having at least one other portion that is anchored to said housing; and  
 a mechanical stop located in the vicinity of said nanometer-scale beam that limits the movement of said nanometer-scale beam, wherein said limited motion of said free-moving portion alters the velocity of at least one of said plurality of molecules.  
   
   
   
       64 . The system of  claim 63 , wherein said nanometer-scale beam is provided in a cantilever configuration.  
   
   
       65 . The system of  claim 63 , wherein said nanometer-scale beam is provided in a jump rope configuration.  
   
   
       66 . The system of  claim 63 , wherein said free-moving portion is operable to move into a position that is substantially parallel to said housing.  
   
   
       67 . The system of  claim 63 , wherein said free-moving portion is operable to move into a position that is substantially parallel to said base and said mechanical stop is located in a position that is substantially vertical to said housing.  
   
   
       68 . The system of  claim 63 , wherein said mechanical stop is the only structure limiting the movement of said free-moving portion and said mechanical stop is located on one side of said nanometer-scale beam to limit the range of movement of said free-moving portion on said one side.  
   
   
       69 . The system of  claim 63 , wherein said mechanical stop comprises a layer of carbon.  
   
   
       70 . The system of  claim 63 , wherein said mechanical stop is thicker than said nanometer-scale beam.  
   
   
       71 . The system of  claim 63 , wherein said mechanical stop is cylindrical in shape.  
   
   
       72 . The system of  claim 63 , wherein said mechanical stop is fabricated from the same material as said nanometer-scale beam.  
   
   
       73 . The system of  claim 63 , wherein said mechanical stop is fabricated from a first material, said nanometer-scale beam is fabricated from a second material, and said first material has a greater stiffness per unit volume than said second material.  
   
   
       74 . The system of  claim 63 , wherein the longest dimension of said nanometer-scale stop is less than the longest dimension of said mechanical beam.  
   
   
       75 . The system of  claim 63 , wherein said nanometer-scale beam is immersed in a partial vacuum and a source of heat provides heat to said nanometer-scale beam to cause said free-moving portion to move.  
   
   
       76 . The system of  claim 63 , wherein thermal vibrations in said working substance or said nanometer-scale beam causes said free-moving portion to move.  
   
   
       77 . The system of  claim 63 , wherein said housing includes at least one input aperture and one output aperture.  
   
   
       78 . The system of  claim 63 , wherein housing includes at least one input aperture and one output aperture and said nanometer-scale beam pumps a working substance from said input aperture to said output aperture.  
   
   
       79 . The system of  claim 63 , wherein said housing includes at least one input aperture and one output aperture, a working substance is pushed through said input aperture, and said nanometer-scale beam pumps said working substance through said output aperture.  
   
   
       80 . The system of  claim 63 , wherein housing includes at least two apertures.  
   
   
       81 . The system of  claim 63 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam.  
   
   
       82 . The system of  claim 63 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a microprocessor.  
   
   
       83 . The system of  claim 63 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein said source of heat is a battery.  
   
   
       84 . The system of  claim 63 , further comprising a source of heat having an exhaust, wherein said exhaust is provided to said free-moving portion.  
   
   
       85 . The system of  claim 63 , wherein said nanometer-scale beam is a nanotube.  
   
   
       86 . The system of  claim 63 , wherein said nanometer-scale beam is a nanowire.  
   
   
       87 . The system of  claim 63 , wherein said nanometer-scale beam is not electrically conductive.  
   
   
       88 . The system of  claim 63 , wherein said mechanical stop is not electrically conductive.  
   
   
       89 . The system of  claim 63 , wherein said mechanical stop is electrically conductive.  
   
   
       90 . The system of  claim 63 , wherein said nanometer-scale beam is electrically conductive.  
   
   
       91 . The system of  claim 63 , wherein said nanometer-scale beam is electrically conductive and said nanometer-scale beam is electrically isolated by being suspended from at least one non-conductive mountings.  
   
   
       92 . The system of  claim 63 , wherein said mechanical stop is electrically conductive and said nanometer-scale beam is electrically conductive.  
   
   
       93 . The system of  claim 63 , wherein said mechanical stop is not electrically conductive and said nanometer-scale beam is electrically conductive.  
   
   
       94 . The system of  claim 63 , wherein said mechanical stop is electrically conductive and said mechanical stop is electrically isolated by being coupled only to a non-conductive layer.  
   
   
       95 . The system of  claim 63 , further comprising control circuitry for providing an electrical charge to said nanometer-scale beam.  
   
   
       96 . The system of  claim 63 , further comprising control circuitry for providing an electrical charge to said mechanical stop.  
   
   
       97 . The system of  claim 63 , further comprising control circuitry for providing an electrical charge to a charge member layer provided in the proximity of said free-moving portion.  
   
   
       98 . The system of  claim 63 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion and a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion.  
   
   
       99 . The system of  claim 63 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, and a third electrical charge to said nanometer-scale beam.  
   
   
       100 . The system of  claim 63 , further comprising control circuitry for providing a first electrical charge to a first charge member layer provided in the proximity of said free-moving portion, a second electrical charge to a second charge member layer provided in the proximity of said free-moving portion, a third electrical charge to said nanometer-scale beam, and said control circuitry does not provide an electrical charge to said mechanical stop.  
   
   
       101 . The system of  claim 63 , wherein an electrical charge is provided to said nanometer-scale beam.  
   
   
       102 . The system of  claim 63 , wherein an electrical charge is provided to said mechanical stop.  
   
   
       103 . The system of  claim 63 , wherein an electrical charge is provided to a charge member layer located in the vicinity of said free-moving portion.  
   
   
       104 . The system of  claim 63 , further comprising a charge member layer located in the vicinity of said free-moving portion.  
   
   
       105 . The system of  claim 63 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion.  
   
   
       106 . The system of  claim 63 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a charge is provided to said charge member layer.  
   
   
       107 . The system of  claim 63 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having an opposite polarity is provided to said nanometer-scale beam.  
   
   
       108 . The system of  claim 63 , further comprising a charge member layer located in the vicinity of said free-moving portion wherein a non-conductive layer is provided between said charge member layer and said free-moving portion and a first charge is provided to said charge member layer having one polarity and a second charge having the same polarity is provided to said nanometer-scale beam.  
   
   
       109 . The system of  claim 63 , further comprising a second mechanical stop positioned to limit the movement of said nanometer-scale beam.  
   
   
       110 . The system of  claim 63 , further comprising a second nanometer-scale beam having a second free-moving portion, wherein said mechanical stop limits the movement of said second nanometer-scale beam.  
   
   
       111 . The system of  claim 63 , wherein said housing is spherical.  
   
   
       112 . The system of  claim 63 , wherein said housing is spherical and said nanometer-scale beam provides thrust to move said spherical base.  
   
   
       113 . The system of  claim 63 , further comprising a magnetic field generator that provides a magnetic field on said nanometer-scale beam.  
   
   
       114 . The system of  claim 63 , further comprising a magnetic field generator that provides magnetic field on said nanometer-scale beam and a current is provided through said nanometer-scale beam to electromagnetically interact with said magnetic field.  
   
   
       115 . The system of  claim 63 , wherein said nanometer-scale beam is electrically influenced.  
   
   
       116 . The system of  claim 63 , wherein said nanometer-scale beam is electrically influenced electrostatically.  
   
   
       117 . The system of  claim 63 , wherein said nanometer-scale beam is electrically influenced electromagnetically.  
   
   
       118 . The system of  claim 63 , further comprising a source of heat for providing heat to said working substance or said nanometer-scale beam, wherein the temperature of said heat is changed, said free-moving portion is moving, and said change in temperature changes the speed of said movement.  
   
   
       119 . The system of  claim 63 , wherein said nanometer-scale beam is operable to move both vertically and horizontally with respect to said base.  
   
   
       120 . The system of  claim 63 , where said plurality of molecules move, on average, at a zero velocity and said nanometer-scale beam impacting said mechanical stop causes said plurality of molecules to move, on average at a non-zero velocity in a direction.  
   
   
       121 . The system of  claim 63 , wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction.  
   
   
       122 . The system of  claim 63 , wherein said nanometer-scale beam repeatedly impacts said mechanical stop and causes said working substance to flow in a direction opposite the mechanical stop with respect to said nanometer-scale beam.  
   
   
       123 . The system of  claim 63 , wherein said nanometer-scale pumps increases the velocity, on average, of said working substance in a direction.  
   
   
       124 . The system of  claim 63 , wherein said nanometer-scale pumps cause said working substance to flow in a direction.  
   
   
       125 . The system of  claim 63 , wherein said nanometer-scale pumps are operable to be controlled to cause said working substance to flow in one of a plurality of pre-determined directions.  
   
   
       126 . The system of  claim 63 , further comprising control circuitry for controlling the direction that said plurality of nanometer-scale pumps move said working substance.  
   
   
       127 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a nanometer-scale beam coupled to said base and having at least one portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and    a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein said nanometer-scale beam increases the velocity, on average, of said plurality of molecules in a direction away from said mechanical stop with respect to said nanometer-scale beam.    
   
   
       128 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a nanometer-scale beam coupled to said base and having at least one portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and    a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, said nanometer-scale beam moves toward said mechanical stop in a first direction, said nanometer-scale beam impacts said mechanical stop after moving towards said mechanical stop, said nanometer-scale beam bounces off said mechanical stop and moves in a second direction, and said nanometer-scale beam increases the velocity of said plurality of molecules in said second direction.    
   
   
       129 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a nanometer-scale beam coupled to said base and having a portion that is free-to-move, wherein said nanometer-scale beam is immersed in said working substance; and    a mechanical stop coupled to said base and located within the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said free-moving portion, wherein the interaction between said free-moving portion and said mechanical stop alters the average velocity of said plurality of molecules.    
   
   
       130 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a plurality of nanometer-scale pumps, wherein each one of said plurality of nanometer-scale pumps comprises: 
 a nanometer-scale beam;  
 a mechanical stop located in the vicinity of said nanometer-scale beam such that said mechanical stop limits the movement of said nanometer-scale beam; and  
   circuitry, wherein a first control signal provided to said circuitry causes said plurality of nanometer-scale pumps to pump said working substance in a first direction and a second control signal provided to said control circuitry causes said plurality of nanometer-scale pumps to pump said working substance in a second direction.    
   
   
       131 . A system comprising: 
 a base;    a working substance having a plurality of molecules;    a nanometer-scale pump, wherein said nanometer-scale pump comprises: 
 a plurality of nanometer-scale beams; and  
 a mechanical stop located in the vicinity of said plurality of nanometer-scale beams such that said mechanical stop limits the movement of each one of said plurality of nanometer-scale beams.  
   
   
   
       132 . The system of  claim 131 , wherein said limited motion of said plurality of nanometer-scale beams alter the average velocity of said working substance.