System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process

Abstract

Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to define at least one notch along its edge. The second insulator layer is then deposited on another portion of the first conductor layer in a manner whereupon the second insulator layer slightly overlaps each notch of the first insulator layer, thereby forming the one or more via holes. A conductive filler can optionally be deposited in each via hole. Lastly, a second conductive layer can be deposited over the first insulator layer, the second insulator layer and, if provided, the conductive filler.

1 . A shadow mask vapor deposition system comprising: 
 means for vapor depositing a first conductor on a substrate;    means for separately vapor depositing a pair of insulators on the first conductor such that one of the pair of deposited insulator layers defines a slot along an edge thereof and the combination of the slot and an edge of the other of the pair of insulator layers define a via hole; and    means for vapor depositing a second conductor on the pair of insulators, whereupon an electrical connection is established between the first and second conductors by way of the via hole.    
     
     
         2 . The system of  claim 1 , further including means for vapor depositing a conductive filler in the via hole.  
     
     
         3 . The system of  claim 1 , wherein each means for vapor depositing a conductor includes: 
 a vacuum vessel;    a deposition source disposed in the vacuum vessel and charged with the conductor to be deposited thereby; and    a shadow mask disposed in the vacuum vessel and having a pattern of apertures corresponding to a desired pattern of the conductor to be deposited by the deposition source, wherein the shadow mask is positioned between the substrate and the deposition source during vapor deposition of the conductor.    
     
     
         4 . The system of  claim 3 , wherein the means for vapor depositing the pair of insulators includes: 
 a vacuum vessel;    a deposition source disposed in the vacuum vessel and charged with the insulator to be deposited thereby;    a shadow mask disposed in the vacuum vessel and having a pattern of apertures corresponding to a desired pattern of the insulator to be deposited by the deposition source, wherein the shadow mask is positioned between the substrate and the deposition source during vapor deposition of the insulator; and    means for repositioning the shadow mask within the vacuum vessel between depositions of one of the pair of insulator layers and the other of the pair of insulator layers.    
     
     
         5 . The system of  claim 3 , wherein the means for vapor depositing the pair of insulators includes for each insulator: 
 a vacuum vessel;    a deposition source disposed in the vacuum vessel and charged with the insulator to be deposited thereby; and    a shadow mask disposed in the vacuum vessel and having a pattern of apertures corresponding to a desired pattern of the insulator to be deposited by the deposition source, wherein the shadow mask is positioned between the substrate and the deposition source during vapor deposition of the insulator.    
     
     
         6 . The system of  claim 4 , further including means for translating the substrate into each vacuum vessel to receive the vapor deposition.  
     
     
         7 . The system of  claim 5 , further including means for translating the substrate into each vacuum vessel to receive the vapor deposition.  
     
     
         8 . The system of  claim 1 , wherein: 
 at least one of the first conductor and the second conductor is formed from at least one of molybdenum, aluminum, gold, copper, nickel and titanium; and    at least one of the pair of insulators is formed from one of silicon dioxide, aluminum oxide and tantalum pentoxide.