Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insulating film, and a sidewall insulating film formed on a sidewall surface of the gate electrode, wherein the gate electrode is made of SiGe, the sidewall insulating film is an insulating film obtained by oxidizing the sidewall surface of the gate electrode, and the sidewall insulating film contains silicon oxide as a main component.

1 . A semiconductor device comprising: 
 a semiconductor substrate;    source/drain regions formed in the semiconductor substrate;    a gate insulating film formed on a channel region between the source/drain regions;    a gate electrode formed on the gate insulating film; and    a sidewall insulating film formed on a sidewall surface of the gate electrode,    wherein the gate electrode is made of SiGe, the sidewall insulating film is an insulating film obtained by oxidizing the sidewall surface of the gate electrode, and the sidewall insulating film contains silicon oxide as a main component.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein a composition ratio of Ge/Si of the sidewall insulating film is lower than a composition ratio of Ge/Si of the gate electrode.  
   
   
       3 . A semiconductor device comprising: 
 a semiconductor substrate in which a SiGe monocrystal layer is formed;    source/drain regions formed in the semiconductor substrate;    a gate insulating film formed on a channel region between the source/drain regions; and    a gate electrode formed on the gate insulating film,    wherein the channel region is formed of the SiGe monocrystal layer, the gate insulating film is an insulating film obtained by oxidizing a surface of the SiGe monocrystal layer, and the gate insulating film is made of silicon oxide as a main component.    
   
   
       4 . The semiconductor device according to  claim 3 , wherein a composition ratio of Ge/Si of the gate insulating film is lower than a composition ratio of Ge/Si of the SiGe monocrystal layer.  
   
   
       5 - 20 . (canceled)