Vertical light-emitting diode and method for manufacturing the same

Abstract

A vertical light-emitting diode and a method for manufacturing the same are described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.

1 . A vertical light-emitting diode, comprising: 
 an illuminant epitaxial structure having a first surface and a second surface on opposite sides;    a first conductivity type electrode deposed on the first surface of the illuminant epitaxial structure;    a local removal sapphire substrate deposed on a first portion of the second surface of the illuminant epitaxial structure and exposing a second portion of the second surface of the illuminant epitaxial structure; and    a second conductivity type electrode deposed on the second portion of the second surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.    
   
   
       2 . The vertical light-emitting diode according to  claim 1 , wherein the vertical light-emitting diode is a GaN-based light-emitting diode.  
   
   
       3 . The vertical light-emitting diode according to  claim 1 , wherein the local removal sapphire substrate is a laser local removal sapphire substrate.  
   
   
       4 . The vertical light-emitting diode according to  claim 1 , wherein the first conductivity type electrode and the second conductivity type electrode are metal electrodes.  
   
   
       5 . The vertical light-emitting diode according to  claim 4 , wherein a material of the metal electrodes is a high-reflectivity metal.  
   
   
       6 . The vertical light-emitting diode according to  claim 1 , wherein the first conductivity type electrode is P-type, and the second conductivity type electrode is N-type.  
   
   
       7 . The vertical light-emitting diode according to  claim 1 , wherein the first conductivity type electrode is N-type, and the second conductivity type electrode is P-type.  
   
   
       8 . A method for manufacturing a vertical light-emitting diode, comprising: 
 providing a sapphire substrate;    forming an illuminant epitaxial structure on the sapphire substrate;    forming a first conductivity type electrode on a surface of the illuminant epitaxial structure;    performing a local removal step to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure; and    forming a second conductivity type electrode on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.    
   
   
       9 . The method for manufacturing a vertical light-emitting diode according to  claim 8 , wherein the vertical light-emitting diode is a GaN-based light-emitting diode.  
   
   
       10 . The method for manufacturing a vertical light-emitting diode according to  claim 8 , wherein the local removal step comprises using a laser dicing technique and a laser ablation technique.  
   
   
       11 . The method for manufacturing a vertical light-emitting diode according to  claim 8 , wherein the first conductivity type electrode and the second conductivity type electrode are metal electrodes.  
   
   
       12 . The method for manufacturing a vertical light-emitting diode according to  claim 11 , wherein a material of the first conductivity type electrode and the second conductivity type electrode is a high-reflectivity metal.  
   
   
       13 . A method for manufacturing a vertical light-emitting diode, comprising: 
 providing a sapphire substrate, wherein the sapphire substrate is preset with a plurality of scribing lines;    forming an illuminant epitaxial structure on the sapphire substrate;    forming a first conductivity type electrode layer on a surface of the illuminant epitaxial structure;    performing a first dicing step along the scribing lines to divide a light-emitting diode wafer, which is composed of the sapphire substrate, the illuminant epitaxial structure and the first conductivity type electrode layer, into a plurality of light-emitting diode chips;    performing a local removal step to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure in each of the light-emitting diode chips, wherein the other surface and the surface of the illuminant epitaxial structure are on opposite sides; and    forming a second conductivity type electrode layer on the exposed portion of the other surface of the illuminant epitaxial structure in each of the light-emitting diode chips, wherein the first conductivity type electrode layer and the second conductivity type electrode layer are opposite conductivity types.    
   
   
       14 . The method for manufacturing a vertical light-emitting diode according to  claim 13 , wherein the vertical light-emitting diode chips are a plurality of GaN-based light-emitting diode chips.  
   
   
       15 . The method for manufacturing a vertical light-emitting diode according to  claim 13 , wherein the first dicing step comprises a laser dicing technique.  
   
   
       16 . The method for manufacturing a vertical light-emitting diode according to  claim 13 , wherein the local removal step comprises: 
 performing a second dicing step to scribe the portion of the sapphire substrate; and    performing an ablation step to ablate the portion of the sapphire substrate from the other surface of the illuminant epitaxial structure.    
   
   
       17 . The method for manufacturing a vertical light-emitting diode according to  claim 16 , wherein the second dicing step comprises a laser dicing technique.  
   
   
       18 . The method for manufacturing a vertical light-emitting diode according to  claim 16 , wherein the ablation step comprises a laser ablation technique.  
   
   
       19 . The method for manufacturing a vertical light-emitting diode according to  claim 13 , wherein the first conductivity type electrode layer and the second conductivity type electrode layer are metal electrode layers.  
   
   
       20 . The vertical light-emitting diode according to  claim 19 , wherein a material of the first conductivity type electrode layer and the second conductivity type electrode layer is a high-reflectivity metal.