Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof

Abstract

A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.

1 . A semiconductor device comprising: 
 a substrate;    a first insulating film provided over the substrate;    a second insulating film provided over the first insulating film;    a semiconductor film provided over the second insulating film;    a source region and a drain region provided in the semiconductor film; and    a channel forming region provided in the semiconductor film between the source region and the drain region,    wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region.    
   
   
       2 . An electronic equipment having the semiconductor device according to  claim 1 , wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone and an electronic book.  
   
   
       3 . A semiconductor device according to  claim 1 , wherein the semiconductor film comprises a material selected from the group consisting of silicon, geranium, and Si x Ge 1-x  where 0<x<1.  
   
   
       4 . A semiconductor device according to  claim 1 , wherein the semiconductor film comprises a crystalline semiconductor film.  
   
   
       5 . A semiconductor device according to  claim 1 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate a semiconductor substrate and a plastic substrate.  
   
   
       6 . A semiconductor device according to  claim 1 , wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       7 . A semiconductor device according to  claim 1 , wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       8 . A semiconductor device according to  claim 1 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       9 . A semiconductor device according to  claim 1 , wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×10 17  atoms/cm 3  at maximum.  
   
   
       10 . A semiconductor device comprising: 
 a substrate;    a first insulating film provide over the substrate;    a second insulating film provided over the first insulating film;    a semiconductor film provided over the second insulating film; and    a channel forming region provided in the semiconductor film,    wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region, and    wherein the second insulating film is thinner than the first insulating film.    
   
   
       11 . An electronic equipment having the semiconductor device according to  claim 10 , wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone and an electronic book.  
   
   
       12 . A semiconductor device according to  claim 10 , wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si x Ge 1-x  where 0<x<1.  
   
   
       13 . A semiconductor device according to  claim 10 , wherein the semiconductor film comprises a crystalline semiconductor film.  
   
   
       14 . A semiconductor device according to  claim 10 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.  
   
   
       15 . A semiconductor device according to  claim 10 , wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       16 . A semiconductor device according to  claim 10 , wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       17 . A semiconductor device according to  claim 10 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       18 . A semiconductor device according to  claim 10 , wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×10 17  atoms/cm 3  at maximum.  
   
   
       19 . A semiconductor device according to  claim 10 , wherein the first insulating film has a film of thickness of from 100 to 500 nm.  
   
   
       20 . A semiconductor device according to  claim 10 , wherein the sound insulating film has a film thickness of from 10 to 100 nm.  
   
   
       21 . A semiconductor device according to  claim 1 , wherein the semiconductor film is a semiconductor film of a bottom gate type thin-film transistor.  
   
   
       22 . A semiconductor device according to  claim 10 , wherein the semiconductor film is a semiconductor film of a bottom gate type thin-film transistor.  
   
   
       23 . A semiconductor device comprising: 
 a substrate;    a bottom gate type thin-film transistor provided over the substrate, the bottom gate type thin-film transistor comprising: 
 a first insulating film provided over the substrate;  
 a second insulating film provided over the first insulating film; and  
 a semiconductor film including a channel forming region provided over the second insulating film;  
   wherein concentration of boron in an interface between the first insulating film and the second insulating film is higher than concentration of boron in an interface between the second insulating film and the channel forming region.    
   
   
       24 . A semiconductor device comprising: 
 a substrate;    a bottom gate type thin-film transistor provided over the substrate, the bottom gate type thin-film transistor comprising: 
 a gate comprising aluminum;  
 a first gate insulating film provided over the gate;  
 a second gate insulating film provided over the first gate insulating film; and  
 a semiconductor film including a channel forming region provided over the second gate insulating film,  
   wherein concentration of boron in an interface between the first gate insulating film and the second gate insulating film is higher than concentration of boron in an interface between the second gate insulating film and the channel forming region.    
   
   
       25 . An electronic equipment having the semiconductor device according to  claim 23 , wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.  
   
   
       26 . An electronic equipment having the semiconductor device according to  claim 24 , wherein the electronic equipment is one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.  
   
   
       27 . A semiconductor device according to  claim 23 , wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si x Ge 1-x  where 0<x<1.  
   
   
       28 . A semiconductor device according to  claim 24 , wherein the semiconductor film comprises a material selected from the group consisting of silicon, germanium and Si x Ge 1-x  where 0<x<1.  
   
   
       29 . A semiconductor device according to  claim 23 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.  
   
   
       30 . A semiconductor device according to  claim 24 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.  
   
   
       31 . A semiconductor device according to  claim 23 , wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       32 . A semiconductor device according to  claim 24 , wherein the second gate insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       33 . A semiconductor device according to  claim 23 , wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       34 . A semiconductor device according to  claim 24 , wherein the first gate insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       35 . A semiconductor device according to  claim 23 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       36 . A semiconductor device according to  claim 24 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       37 . A semiconductor device according to  claim 23 , wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×10 17  atoms/cm 3  at maximum.  
   
   
       38 . A semiconductor device according to  claim 24 , wherein the concentration of boron in the interface between the first gate insulating film and the second gate insulating film is 3×10 17  atoms/cm 3  at maximum.  
   
   
       39 . A semiconductor device according to  claim 1 , wherein stress between the first insulating film and the semiconductor film is different from stress between the second insulating film and the semiconductor film.  
   
   
       40 . A semiconductor device according to  claim 10 , wherein stress between the first insulating film and the semiconductor film is different from the stress between the second insulating film and the semiconductor film.  
   
   
       41 . A semiconductor device according to  claim 23 , wherein stress between the first insulating film and the semiconductor film is different from stress between the second insulating film and the semiconductor film.  
   
   
       42 . A semiconductor device according to  claim 24 , wherein stress between the first gate insulating film and the semiconductor film is different from stress between the second gate insulating film and the semiconductor film.  
   
   
       43 . A method of manufacturing a semiconductor device comprising: 
 forming a first insulating film over a substrate;    exposing the first insulating film to an atmosphere; and    successively forming a second insulating film and a semiconductor film over the first insulating film without exposing the second insulating film and the semiconductor film to the atmosphere after exposing the first insulating film to the atmosphere.    
   
   
       44 . A method of manufacturing a semiconductor device comprising: 
 forming a first insulating film over a substrate;    exposing the first insulating film to an atmosphere;    heating the first insulating film after exposing the first insulating film to the atmosphere; and    successively forming a second insulating film and a semiconductor film over the first insulating film without exposing the second insulating film and the semiconductor film to the atmosphere after heating the first insulating film.    
   
   
       45 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the semiconductor film is an amorphous silicon film.  
   
   
       46 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the semiconductor film is an amorphous silicon film.  
   
   
       47 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.  
   
   
       48 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the substrate is one selected from the group consisting of an insulating substrate, a ceramic substrate, a stainless steel substrate, a metal substrate, a semiconductor substrate and a plastic substrate.  
   
   
       49 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       50 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       51 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       52 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.  
   
   
       53 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       54 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the semiconductor device is a liquid crystal display device.  
   
   
       55 . A method of manufacturing a semiconductor device according to  claim 43 , wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×10 17  atoms/cm 3  at maximum.  
   
   
       56 . A method of manufacturing a semiconductor device according to  claim 44 , wherein the concentration of boron in the interface between the first insulating film and the second insulating film is 3×10 17  atoms/cm 3  at maximum.