Integrated circuitry production processes, methods, and systems

Abstract

The invention includes methods of forming capacitor structures and removing organic material. An organic material, such as a photoresist, is disposed on a substrate. The organic material is contacted with a chemical mechanical polishing pad and a polishing fluid to remove the organic material from the substrate. The polishing fluid can be essentially free of particles, and can be water.

1 - 53 . (canceled)  
   
   
       54 . Removing carbon-comprising material from above a substrate with a pad and a fluid, the fluid comprising a particulate concentration of less than or equal to about  0 . 1  weight percent at an initiation of the removing.  
   
   
       55 . The removing of  claim 54  wherein, the pad is a chemical-mechanical-polishing pad.  
   
   
       56 . The removing of  claim 54  wherein, the substrate is semiconductive.  
   
   
       57 . The removing of  claim 54  wherein, the fluid is substantially unreactive with the substrate.  
   
   
       58 . The removing of  claim 54  wherein, the carbon-comprising material also comprises both oxygen and hydrogen.  
   
   
       59 . The removing of  claim 54  wherein, the carbon-comprising material comprises a resist-material.  
   
   
       60 . A carbon-comprising material removal system, comprising: 
 a substrate support configured to support a substrate having a carbon-comprising material thereon;    a pad configured to physically contact the carbon-comprising material; and    a fluid source, the fluid source configured to provide a fluid to a location between the pad and the material, the fluid comprising a particulate concentration of less than or equal to about 0.1 weight percent.    
   
   
       61 . The system of  claim 60  wherein the substrate comprises both semiconductive material and conductive material, the conductive material forming a surface of the substrate and having the carbon-comprising material thereon.  
   
   
       62 . The system of  claim 60  wherein the pad is a chemical-mechanical-polishing pad.  
   
   
       63 . The system of  claim 62  wherein the pad includes a surface facing the carbon-comprising material, the surface of the pad comprising a polyurethane-material.  
   
   
       64 . The system of  claim 60  wherein the pad is configured to rotate about an axis.  
   
   
       65 . The system of  claim 60  wherein the pad is configured to have linear motion along an axis.  
   
   
       66 . The system of  claim 60  wherein the fluid comprises an additive, the additive being both reactive with the carbon-comprising material and unreactive with the substrate.  
   
   
       67 . The system of  claim 66  wherein the additive comprises TMAH.  
   
   
       68 . An integrated circuitry manufacturing process, comprising: 
 applying a mask above a semiconductive substrate;    creating a recess within the substrate using the mask; and    removing at least a portion of the mask with a pad and fluid, the fluid substantially lacking in particulates.    
   
   
       69 . The process of  claim 68  wherein substrate comprises a conductive material and a semiconductive material, the conductive material being a surface of the substrate and contacting the mask.  
   
   
       70 . The process of  claim 68  wherein the recess is created in at least the conductive material.  
   
   
       71 . The process of  claim 68  wherein during the removing of the portion of the mask the fluid does not react with the conductive material.  
   
   
       72 . The process of  claim 68  wherein the mask comprises one of photoresist material or non-photosensitive resist material.  
   
   
       73 . The process of  claim 68  wherein the mask comprises a polyimide material.