US2007071883A1PendingUtilityA1

Method of fabricating organic light emitting display device with passivation structure

Assignee: SU CHIH-HUNGPriority: Jan 29, 2003Filed: Nov 13, 2006Published: Mar 29, 2007
Est. expiryJan 29, 2023(expired)· nominal 20-yr term from priority
H10K 50/844H10K 59/873H10K 2102/3026
43
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Claims

Abstract

A method of fabricating an organic light emitting display device is provided. First, an organic light emitting display unit having an organic luminous layer and a driving circuit is formed on a substrate. Then, a passivation structure covering the substrate and the display unit is formed. The passivation structure is composed of an organic/inorganic film. The organic/inorganic ratio of the organic/inorganic film decreases gradually during the fabricating process.

Claims

exact text as granted — not AI-modified
1 . A method of fabricating an organic light emitting display device, the method comprising: 
 providing a substrate;    forming an organic light emitting unit on the substrate; and    forming a passivation structure over the organic light emitting unit and the substrate, wherein the passivation structure is reacted by an organic material and an inorganic material, and the ratio of the organic material to the inorganic material is varying during the formation of the passivation structure.    
   
   
       2 . The method of  claim 1 , wherein forming the passivation structure is performed by a sputtering process.  
   
   
       3 . The method of  claim 1  wherein forming the passivation structure is performed by a chemical vapor deposition (CVD) process.  
   
   
       4 . The method of  claim 3 , wherein the chemical vapor deposition is a plasma enhanced chemical vapor deposition process.  
   
   
       5 . The method of  claim 3  wherein the chemical vapor deposition process uses reacting gases, in which the ratio of the organic material to the inorganic material decreases gradually to make a later formed part of the passivation structure having a lower organic/inorganic ratio than that of an earlier formed part of the passivation structure.  
   
   
       6 . The method of  claim 5 , wherein the reacting gases of the chemical vapor deposition process comprise trimethylchlorosilane (TMCS) or hexamethyl disilazane (HMDS).  
   
   
       7 . The method of  claim 1 , wherein the organic material includes PTFE.  
   
   
       8 . The method of  claim 1 , wherein the inorganic material includes silicon oxide.  
   
   
       9 . A method of fabricating an organic light emitting display device, the method comprising: 
 forming an organic light emitting unit over a substrate; and    forming a passivation structure including an organic material and an inorganic material over the organic light emitting unit, wherein the passivation structure has a varied organic/inorganic ratio and the organic/inorganic ratio is determined by a mix target.    
   
   
       10 . The method of  claim 9 , wherein forming the passivation structure is performed by a chemical vapor deposition process.  
   
   
       11 . The method of  claim 10 , wherein the chemical vapor deposition is a plasma enhanced chemical vapor deposition.  
   
   
       12 . The method of  claim 9 , wherein forming the passivation structure is performed by a sputtering process.  
   
   
       13 . The method of  claim 12 , wherein the mix target, which comprises the inorganic material and the organic material in the surface of the mix target, is used as a sputtering target in the sputtering process to form the passivation structure.  
   
   
       14 . The method of  claim 10 , wherein the chemical vapor deposition process uses reacting gases comprising trimethylchlorosilane (TMCS) or hexamethyl disilazane (HMDS).  
   
   
       15 . The method of  claim 9 , wherein the organic material includes PTFE.  
   
   
       16 . The method of  claim 9 , wherein the inorganic material includes silicon oxide.  
   
   
       17 . The method of  claim 9 , wherein an earlier formed part of the passivation structure has a higher organic/inorganic ratio than that of a later formed part of the passivation structure.

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