Image sensing device including image sensor with high dynamic range

Abstract

An image sensor with a high dynamic range is provided. The image sensor includes a semiconductor substrate, a plurality of light-receiving elements formed on the semiconductor substrate, and light-shield films formed on upper ends of some of the light-receiving elements to partially block light incident upon each of the some light-receiving elements. Hence, an image sensing device including the image sensor can detect an accurate image regardless of whether the environment is bright or dark.

1 . An image sensor comprising: 
 a semiconductor substrate;    a plurality of light-receiving elements formed on the semiconductor substrate; and    light-shield films formed on upper ends of some of the light-receiving elements to partially block light incident upon each of the some light-receiving elements.    
   
   
       2 . The image sensor of  claim 1 , wherein the light-receiving elements include photo diodes that receive light.  
   
   
       3 . The image sensor of  claim 1 , wherein lines of light-receiving elements covered with the light-shield films and lines of light-receiving elements on which no light-shield films are formed are arranged in such a way that one line of light-receiving elements covered with the light-shield film alternates with one line of light-receiving elements on which no light-shield films are formed.  
   
   
       4 . The image sensor of  claim 1 , further comprising: 
 a plurality of first vertical transmission electrodes formed on the semiconductor substrate, transmitting an electrical signal output from the light-receiving elements covered with the light-shield films to the outside;    a plurality of second vertical transmission electrodes formed on the semiconductor substrate, transmitting an electrical signal output from the light-receiving elements having no light-shield films thereon to the outside;    a plurality of vertical charge transmission units formed on the semiconductor substrate, electrically connected to the light-receiving elements, and transmitting charges received from the light-receiving elements;    at least one horizontal charge transmission unit formed on the semiconductor substrate, electrically connected to the vertical charge transmission units, and receiving charges received from the vertical charge transmission units; and    at least one horizontal transmission electrode formed on the semiconductor substrate, electrically connected to the horizontal charge transmission unit, and transmitting an electrical signal received from the horizontal charge transmission unit to the outside.    
   
   
       5 . An image sensing device comprising: 
 an image sensor comprising a semiconductor substrate, a plurality of light-receiving elements formed on the semiconductor substrate, and light-shield films formed on upper ends of some of the light-receiving elements to partially block light incident upon each of the some light-receiving elements;    a first analog-to-digital converter converting an electrical signal received from the light-receiving elements covered with the light-shield films into a digital signal;    a second analog-to-digital converter converting an electrical signal received from the light-receiving elements having no light-shield films thereon to a digital signal;    a comparator comparing values of the digital signals output from the first and second analog-to-digital converters with a value of a reference signal and detecting and outputting a signal greater than the reference signal value and a signal smaller than the reference signal value; and    a digital-to-analog converter converting the signals output by the comparator into analog signals.    
   
   
       6 . The image sensing device of  claim 5 , further comprising: 
 a first amplification unit amplifying the electrical signal received from the light-receiving elements covered with the light-shield films and outputting the amplified signal to the first analog-to-digital converter; and    a second amplification unit amplifying the electrical signal received from the light-receiving elements having no light-shield films thereon and outputting the amplified signal to the second analog-to-digital converter.