Infra-red light-emitting device

Abstract

The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.

1 . An infra-red light-emitting device, comprising: 
 a substrate having an upper surface and a bottom surface;    a first window layer positioned on the upper surface;    a silicon dioxide layer positioned on the first window layer;    a plurality of silicon nanocrystals with a crystal size between 4 and 8 nanometers distributed in the silicon dioxide layer;    a second window layer positioned on the silicon dioxide layer;    a transparent conductive layer positioned on the second window layer;    a first ohmic contact electrode positioned on the transparent conductive layer; and    a second ohmic contact electrode positioned on the bottom surface.    
   
   
       2 . The infra-red light-emitting device of  claim 1 , wherein thickness of the silicon dioxide layer is between 1 and 10,000 nanometers.  
   
   
       3 . The infra-red light-emitting device of  claim 1 , wherein the substrate is comprised of a p-silicon substrate or an n-silicon substrate, the first window layer and the second window layer being comprised of microcrystal-SiC, amorphous-SiC, or gallium nitride.  
   
   
       4 . The infra-red light-emitting device of  claim 1 , wherein the transparent conductive layer is comprised of indium tin oxide, and wherein the first ohmic contact electrode is comprised of aluminum, nickel or the combination thereof.  
   
   
       5 . An infra-red light-emitting device, comprising: 
 a substrate;    a first window layer positioned on the substrate;    a silicon dioxide layer positioned on a portion of surface of first window layer;    a plurality of silicon nonocrystals with a crystal size between 4 and 8 nanometers distributed in the silicon dioxide layer;    a second window layer positioned on the silicon dioxide layer;    a transparent conductive layer positioned on the second window layer;    a first ohmic contact electrode positioned on the transparent conductive layer; and    a second ohmic contact electrode positioned on another portion of surface of the first window layer.    
   
   
       6 . The infra-red light-emitting device of  claim 5 , wherein thickness of the silicon dioxide layer is between 1 and 10,000 nanometers.  
   
   
       7 . The infra-red light-emitting device of  claim 5 , wherein the first window layer and the second window layer are comprised of microcrystal-SiC, amorphous-SiC, or gallium nitride.  
   
   
       8 . The infra-red light-emitting device of  claim 5 , wherein the transparent conductive layer is comprised of indium tin oxide, and wherein the first ohmic contact electrode is comprised of aluminum, nickel or the combination thereof.  
   
   
       9 . The infra-red light-emitting device of  claim 5 , wherein the substrate is comprised of a quartz substrate or a sapphire substrate.