Semiconductor device and manufacturing method thereof

Abstract

A sidewall-insulation film 9 is provided on a side surface of a first opening portion 8 a formed in a base extraction electrode 5 B of a hetero-junction bipolar transistor, and a portion of the sidewall-insulation film 9 extends so as to protrude from a surface opposite to a semiconductor substrate 1 toward a main surface of the semiconductor substrate 1 in the base extraction electrode 5 B, and protruded length thereof is set to be equal to or smaller than one half of thickness of the insulation film 4 interposed between the main surface of the semiconductor substrate 1 and a lower surface of the base extraction electrode 5 B.

1 . A semiconductor device comprising: 
 (a) a first semiconductor region having a first conductivity type formed over a semiconductor substrate;    (b) a first insulation film deposited over said semiconductor substrate;    (c) an opening portion opened in said first insulation film;    (d) a first semiconductor film having a second conductivity type that is a conductivity type opposite to said first conductivity type, provided over said first insulation film, and extending so that a portion thereof is protruded from an end of said opening portion toward a center of the opening portion;    (e) a second semiconductor film having the second conductivity type formed toward a main surface of said semiconductor substrate with a surface of a protruded portion of said first semiconductor film contacting with a surface opposite to said semiconductor substrate;    (f) a third semiconductor film having the second conductivity type formed so as to contact with the main surface of said semiconductor substrate and said second semiconductor film; and    (g) a second insulation film formed over said first semiconductor film and a side surface of said first semiconductor film located over said opening portion,    (h) wherein, of said second insulation film formed over the side surface of said first semiconductor film, length of a portion extending so as to protrude from a bottom surface of said first semiconductor film toward the main surface of said semiconductor substrate is equal to or smaller than one half of thickness of said first insulation film in a direction intersecting with said semiconductor substrate.    
     
     
         2 . The semiconductor device according to  claim 1 , 
 wherein a fourth semiconductor film has the first conductivity type so as to be electrically connected to said third semiconductor film and insulated from said first semiconductor film.    
     
     
         3 . The semiconductor device according to  claim 1 , 
 wherein the second insulation film formed over the side surface of said first semiconductor film is protruded upward from an upper surface of the second insulation film over said first semiconductor film.    
     
     
         4 . The semiconductor device according to  claim 1 , 
 wherein said second semiconductor film is made from a silicon nitride film.    
     
     
         5 . The semiconductor device according to  claim 1 , 
 wherein said second semiconductor film is made from a poly crystal.    
     
     
         6 . The semiconductor device according to  claim 1 , 
 wherein said third semiconductor film is made from a single crystal.    
     
     
         7 . The semiconductor device according to  claim 1 , 
 wherein said second and third semiconductor films are each made from a material primarily containing silicon-germanium.    
     
     
         8 . A semiconductor device comprising: 
 (a) a first semiconductor region of a first conductivity type formed over a semiconductor substrate;    (b) a first insulation film deposited over said semiconductor substrate;    (c) an opening portion opened in said first insulation film;    (d) a first electrode of a second conductivity type that is a conductivity type opposite to said first conductivity type, located over said first insulation film, and extending so that a portion thereof is protruded from an end of said opening portion toward a center of the opening portion;    (e) a third semiconductor film located over said first electrode;    (f) a semiconductor film provided in said opening portion, electrically connected through a protruded portion of said first electrode, and electrically connected to said first semiconductor region; and    (g) a fourth insulation film provided over a first surface intersecting with a main surface of said semiconductor substrate in a surface of a protruded portion of said first electrode, extending so as to protrude toward the main surface of said semiconductor substrate from a second surface opposite to said semiconductor substrate in the surface of said protruded portion of said first electrode, and provided so that length of the protruded portion is equal to or smaller than one half of thickness of said first insulation film.    
     
     
         9 . The semiconductor device according to  claim 8 , 
 wherein a second electrode of the first conductivity type is provided so as to be electrically connected to said semiconductor film and insulated from said first electrode.    
     
     
         10 . The semiconductor device according to  claim 8 , 
 Wherein said fourth insulation film is a surface of a protruded portion of said third insulation film located over the protruded portion of said first electrode, the surface being provided so as to overlap with a third surface intersecting with the main surface of said semiconductor substrate.    
     
     
         11 . The semiconductor device according to  claim 10 , 
 wherein a portion of said fourth insulation film protrudes from an upper surface of said third insulation film.    
     
     
         12 . The semiconductor device according to  claim 8 , 
 wherein said third and fourth insulation films are insulation films of the same kind and are insulation films of a kind different from said first insulation film.    
     
     
         13 . The semiconductor device according to  claim 8 , 
 wherein said third and fourth insulation films are made from silicon nitride films.    
     
     
         14 . The semiconductor device according to  claim 8 , 
 wherein said semiconductor film is made from a material containing primarily a semiconductor of a kind different from said semiconductor substrate.    
     
     
         15 . The semiconductor device according to  claim 14 , 
 wherein said semiconductor film is made from a material containing primarily silicon-germanium.    
     
     
         16 . The semiconductor device according to  claim 8 , 
 wherein said semiconductor film has a second semiconductor film growing from said second surface of said first electrode, and a third semiconductor film growing from the main surface of said semiconductor substrate so as to be connected to the second semiconductor film.    
     
     
         17 . The semiconductor device according to  claim 16 , 
 wherein said second semiconductor film is made from a poly crystal and said third semiconductor film is made from a single crystal.    
     
     
         18 . A semiconductor device having a bipolar transistor, comprising: 
 (a) a first semiconductor region which is a collector region of said bipolar transistor and is of a first conductivity type formed over said semiconductor substrate;    (b) a silicon oxide film deposited over said semiconductor substrate;    (c) an opening portion opened in said silicon oxide film;    (d) a first polycrystalline silicon film provided over said silicon oxide film, having a second conductivity type which is a conductivity type opposite to said first conductivity type, and extending so that a portion thereof is protruded from an end portion of said opening portion toward a center of said opening portion;    (e) a polycrystalline silicon-germanium film of the second conductivity type, which is formed toward a main surface of said semiconductor substrate with a surface of a protruded portion of said first polycrystalline silicon film contacting with a surface opposite to said semiconductor substrate;    (f) a single crystalline silicon-germanium film of the second conductivity type, which is formed so as to contact with the main surface of said semiconductor and said polycrystalline silicon-germanium film;    (g) silicon nitride films formed over said first polycrystalline silicon film and a side surface of said first polycrystalline silicon film located over said opening portion,    wherein, of the silicon nitride film formed over the side surface of said first polycrystalline silicon film, length of a portion extending so as to protrude from a bottom surface of said first polycrystalline silicon film toward the main surface of said semiconductor substrate is equal to or smaller than one half of thickness of said silicon oxide film in a direction intersecting with said semiconductor substrate, and said silicon nitride film formed over the side surface of said first polycrystalline silicon film protrudes upward from an upper surface of said silicon nitride film over said first polycrystalline silicon film.    
     
     
         19 . A semiconductor device having a bipolar transistor, comprising: 
 (a) a collector region of a first conductivity type formed over said semiconductor substrate;    (b) a first insulation film deposited over said semiconductor substrate;    (c) an opening portion opened in said first insulation film;    (d) a base electrode having a second conductivity type that is a conductivity type opposite to said first conductivity type, provided over said first insulation film, and formed so that a portion thereof extends and protrudes from an end portion of said opening portion toward a center of said opening portion;    (e) a third semiconductor film provided over said base electrode;    (f) a semiconductor film formed with said base electrode and said corrector region in said opening portion contacting with each other;    (g) a base region of the second conductivity type, which is formed over said semiconductor film and electrically connected through a protruded portion of said base electrode;    (h) an emitter region of the first conductivity type, which is formed in said base region of said semiconductor film; and    (i) an emitter electrode of the first conductivity type, which is electrically connected to said emitter region and insulated from said base electrode; and    (j) a fourth insulation film provided over a first surface which is a surface of the protruded portion of said base electrode and intersects with a main surface of said semiconductor substrate, wherein the fourth insulation film is provided so that length of a portion, which extends so as to protrude toward a main surface of said semiconductor substrate from a second surface that is a surface of the protruded portion of said base electrode and is opposite to said semiconductor substrate, is equal to or smaller than one half of thickness of said first insulation film.    
     
     
         20 . The semiconductor device according to  claim 19 , 
 wherein said fourth insulation film is provided so as to overlap with a third surface that is a surface of said third insulation film over a protruded portion of said base electrode and intersects with the main surface of said semiconductor substrate.    
     
     
         21 . The semiconductor device according to  claim 19 , 
 wherein a portion of said fourth insulation film protrudes from an upper surface of said third insulation film.    
     
     
         22 . The semiconductor device according to  claim 19 , 
 wherein said third and fourth insulation films are insulation films of the same kind and are insulation films of a kind different from said first insulation film.    
     
     
         23 . The semiconductor device according to  claim 19 , 
 wherein said third and fourth insulation films are made from silicon nitride films.    
     
     
         24 . The semiconductor device according to  claim 19 , 
 wherein said semiconductor film is made from a material containing primarily a semiconductor of a kind different from said semiconductor substrate.    
     
     
         25 . The semiconductor device according to  claim 19 , 
 wherein said semiconductor film is made from a material containing primarily silicon-germanium.    
     
     
         26 . The semiconductor device according to  claim 19 , 
 wherein said semiconductor film has a second semiconductor film growing from said second surface of said base electrode and a third semiconductor film growing from the main surface of said semiconductor substrate so as to be connected to the second semiconductor film.    
     
     
         27 . The semiconductor device according to  claim 26 , 
 wherein said second semiconductor film is made from a poly crystal and said third semiconductor film is made from a single crystal.    
     
     
         28 - 40 . (canceled)