US2007092647A1PendingUtilityA1

Boron doped diamond

Assignee: SCARSBROOK GEOFFREY APriority: Dec 14, 2001Filed: Dec 1, 2006Published: Apr 26, 2007

Est. expiryDec 14, 2021(expired)· nominal 20-yr term from priority

Inventors:Geoffrey Alan Scarsbrook Philip Maurice Martineau Daniel James Twitchen Andrew John Whitehead Michael Cooper Barbel Dorn

C30B 25/105C30B 29/04Y10T428/30C30B 25/10

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Abstract

A layer of single crystal boron doped diamond produced by CVD and having a total boron concentration which is uniform. The layer is formed from a single growth sector, or has a thickness exceeding 100 μm, or has a volume exceeding 1 mm 3 , or a combination of such characteristics.

Claims

exact text as granted — not AI-modified

1 . A method of producing a layer of single crystal boron doped diamond including the steps of providing a diamond substrate having a surface which is substantially free of crystal defects, providing a source gas, such source gas including a source of boron, dissociating the source gas and allowing homoepitaxial diamond growth on the surface which is substantially free of crystal defects.

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