Methods of forming semiconductor constructions

Abstract

The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

1 - 95 . (canceled)  
   
   
       96 . A method of forming a semiconductor construction, comprising: 
 forming a first conductive material over a semiconductor substrate and shaped as a first upwardly-opening container having a first container opening therein, the first container having an upper surface proximate the first container opening;    forming an insulative material within the first container opening; and    forming a second conductive material over the first container opening and physically against the upper surface of the first container, the second conductive material being shaped as a second upwardly-opening container having a second container opening therein; the second container opening being wider than the first container opening in at least one cross-sectional view.    
   
   
       97 . The method of  claim 96  wherein the forming the insulative material comprises forming the insulative material to entirely fill the first container opening.  
   
   
       98 . The method of  claim 96  wherein the first conductive material is substantially the same as the second conductive material.  
   
   
       99 . The method of  claim 96  wherein the first conductive material comprises one or more of platinum, rhodium, iridium, ruthenium, titanium, tantalum, and tungsten.  
   
   
       100 . The method of  claim 96  wherein the first conductive material comprises one or more of rhodium oxide, ruthenium oxide, iridium oxide, titanium nitride, titanium boronitride, tantalum nitride, tantalum boronitride, titanium aluminum nitride, and tungsten nitride.  
   
   
       101 . The method of  claim 100  wherein the first and second conductive materials are the same in composition as one another.  
   
   
       102 . The method of  claim 96  wherein the insulative material is selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbide, silicon dioxide, and mixtures thereof.  
   
   
       103 . The method of  claim 96  wherein the forming the first conductive material comprises forming a lower portion of the first upwardly-opening container with vertically-extending grains and an upper portion of the first upwardly-opening container with horizontally-extending grains, the lower portion being oriented substantially at 90° relative to the upper portion.  
   
   
       104 . The method of  claim 96  wherein: 
 the forming the first conductive material comprises forming a lower portion of the first upwardly-opening container with vertically-extending grains and an upper portion of the first upwardly-opening container with horizontally-extending grains; and    the forming the second conductive material comprises forming a lower portion of the second upwardly-opening container with vertically-extending grains; the lower portion of the second upwardly-opening container being directly against the upper portion of the first upwardly-opening container.    
   
   
       105 . The method of  claim 104  further comprising a third conductive material within the second upwardly-opening container.  
   
   
       106 . The method of  claim 105  further comprising forming capacitor dielectric material between the second and third conductive materials.