Coated substrate created by systems and methods for modulation of power and power related functions of PECVD discharge sources to achieve new film properties

Abstract

A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes creating a substrate by generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.

1 . A substrate coated with a thin film, the substrate formed by: 
 generating a first electrical pulse having a first pulse width;    using the first electrical pulse, generating a first density of radicalized species;    disassociating a first portion of a feedstock gas using the first density of radicalized species, thereby creating a first plurality of deposition materials;    depositing the first plurality of deposition materials on the substrate as a first layer;    generating a second electrical pulse having a second pulse width, wherein the second pulse width is different from the first pulse width;    using the second electrical pulse, generating a second density of radicalized species;    disassociating a second portion of a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second plurality of deposition materials; and    depositing the second plurality of deposition materials on the first layer.    
     
     
         2 . A substrate coated with a thin film, the substrate formed by: 
 generating a plasma having a density of radicalized species, wherein the plasma is generated using a power signal;    disassociating a first portion of a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material;    depositing the first deposition material on the substrate, thereby forming a first layer;    modifying the density of radicalized species by modulating the power signal used to generate the plasma;    disassociating a second portion of the feedstock gas using the radicalized species in the modified density of radicalized species, thereby creating a second deposition material; and    depositing the second deposition material on the first layer, thereby forming a second layer.    
     
     
         3 . The substrate of  claim 2 , further formed by: 
 modifying the density of radicalized species by modulating the power signal used to generate the plasma, thereby creating a third density of radicalized species;    disassociating a third portion of the feedstock gas using the third density of radicalized species, thereby creating a third deposition material; and    depositing the third deposition material on the second layer, thereby forming a third layer.    
     
     
         4 . The substrate of  claim 2 , wherein the first layer and the second layer comprise separate layers of deposition material within a film deposited on the substrate.  
     
     
         5 . The substrate of  claim 2 , wherein the first layer and the formed second layer comprises a single gradient stack deposited on the substrate.  
     
     
         6 . The substrate of  claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises: 
 modulating an amplitude characteristic of the power signal used to generate the plasma.    
     
     
         7 . The substrate of  claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises: 
 modulating a frequency characteristic of the power signal used to generate the plasma.    
     
     
         8 . The substrate of  claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises: 
 modulating a pulse width characteristic of the power signal used to generate the plasma.    
     
     
         9 . The substrate of  claim 2 , wherein modifying the density of radicalized species by modulating the power signal used to generate the plasma comprises: 
 modulating a pulse position characteristic of the power signal used to generate the plasma.    
     
     
         10 . The substrate of  claim 2 , wherein the power signal comprises a high-frequency signal for generating the plasma.  
     
     
         11 . The substrate of  claim 2 , wherein the power signal is usable by a high-frequency generator so that the high-frequency generator can generate a high-frequency signal for generating the plasma.  
     
     
         12 . The substrate of  claim 11 , wherein the high-frequency signal comprises microwaves.  
     
     
         13 . A substrate coated with a film, the substrate formed by: 
 generating a first electrical pulse having a first pulse amplitude;    using the first electrical pulse to generate a first density of radicalized species;    disassociating a first portion of a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material;    depositing the first deposition material on the substrate;    generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse amplitude;    using the second electrical pulse to generate a second density of radicalized species;    disassociating a second portion of the feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and    depositing the second plurality of deposition materials on the first deposition material.