Plasma processing system and plasma processing method

Abstract

An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric fields immediately after plasmas have been ignited. Another object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas and include a Faraday shield to thereby remove slant magnetic fields so as to ensure the ignition of plasmas. The plasma processing system comprises a chamber 31 , a bell jar 32 , a coil 42 disposed on the outside of the belljar 32 , a Faraday shield 44 disposed between the belljar 32 and the coil 42 , a susceptor 33 , a conducting member 49 disposed upper of the belljar 32 , a first high-frequency electric power source for the coil 42 to generate induced electromagnetic fields, and a second high-frequency electric power source 34 for generating electric fields between the susceptor 33 and the conducting member 49.

1 . A plasma processing system comprisin: 
 a processing vessel including a housing unit for containing a substrate-to-be-processed and a plasma generating unit communicated with the housing unit and having an insulator wall, for performing plasma processing on the substrate-to-be-processed;    a conducting mount disposed in the housing unit, for the substrate-to-be-processed to be mounted on;    antenna means disposed on the outside of the insulator wall, for forming induced electromagnetic fields in the plasma generating unit;    a first high-frequency electric power source for supplying high-frequency electric power to the antenna means;    gas supply means for supplying a plasma generating gas which is dissociated by the induced electromagnetic fields generated by the antenna means, and a processing gas for the plasma processing;    a conducting member disposed outside the insulator wall, opposed to the mount, being fixed to a ground to generate a vertical electric field between the substrate-to-be-processed and the conducting member; and    a second high-frequency electric source for supplying high-frequency electric power to the mount.    
   
   
       2 . A plasma processing system comprising: 
 a chamber for housing a substrate-to-be-processed;    a belljar disposed on the chamber in communication with the chamber and having a side wall and a top wall of an insulator;    a conducting mount disposed in the chamber, for the substrate-to-be-processed to be mounted on;    an antenna means disposed on the outside of the side wall of the belljar, for generating induced electromagnetic fields in the belljar;    a first high-frequency electric power source for supplying high-frequency electric power to the antenna means;    gas supply means for supplying a plasma generating gas which is dissociated by the induced electromagnetic fields generated by the antenna means to be plasmas, and a processing gas for the plasma processing;    a conducting member disposed upper of the top wall, opposed to the mount, being fixed to a ground to generate a vertical electric field between the substrate-to-be-processed and the conducting member; and    a second high-frequency electric power source for supplying high-frequency electric power to the mount.    
   
   
       3 . A plasma processing system comprising: 
 a chamber for housing a substrate-to-be-processed;    a belljar disposed on the chamber in communication with the chamber and having a side wall and a top wall of an insulator;    a conducting mount disposed in the chamber, for the substrate-to-be-processed to be mounted on;    an antenna means disposed on the outside of the side wall of the belljar, for generating induced electromagnetic fields in the belljar;    a first high-frequency electric power source for supplying high-frequency electric power to the antenna means;    gas supply means for supplying a plasma generating gas which is dissociated by the induced electromagnetic fields generated by the antenna means to be plasmas, and a processing gas for the plasma processing;    a Faraday shield disposed between the belljar and the antenna means;    a conducting member disposed upper of the top wall, opposed to the mount, being fixed to a ground to generate a vertical electric field between the substrate-to-be-processed and the conducting member; and    a second high-frequency electric power source for supplying high-frequency electric power to the mount.    
   
   
       4 . A plasma processing system according to  claim 1 , wherein 
 the mount has a heating mechanism for heating the substrate-to-be-processed.    
   
   
       5 . (canceled)  
   
   
       6 . (canceled)  
   
   
       7 . (canceled)  
   
   
       8 . (canceled)  
   
   
       9 . (canceled)  
   
   
       10 . (canceled)  
   
   
       11 . (canceled)  
   
   
       12 . A plasma processing system according to  claim 1  wherein the conducting member is flat.  
   
   
       13 . A plasma processing system according to  claim 12 , wherein 
 the first high-frequency electric power source is connected to an upper end portion of the antenna means.    
   
   
       14 . A plasma processing system according to  claim 2 , wherein the mount has a heating mechanism for heating the substrate-to-be-processed.  
   
   
       15 . A plasma processing system according to  claim 3 , wherein the mount has a heating mechanism for heating the substrate-to-be-processed.  
   
   
       16 . A plasma processing system according to  claim 2  wherein the conducting member is flat.  
   
   
       17 . A plasma processing system according to  claim 3  wherein the conducting member is flat.  
   
   
       18 . A plasma processing system according to  claim 4  wherein the conducting member is flat.  
   
   
       19 . A plasma processing system according to  claim 1 , wherein 
 the first high-frequency electric power source is connected to an upper end portion of the antenna means.    
   
   
       20 . A plasma processing system according to  claim 2 , wherein 
 the first high-frequency electric power source is connected to an upper end portion of the antenna means.    
   
   
       21 . A plasma processing system according to  claim 3 , wherein 
 the first high-frequency electric power source is connected to an upper end portion of the antenna means.    
   
   
       22 . A plasma processing system according to  claim 4 , wherein 
 the first high-frequency electric power source is connected to an upper end portion of the antenna means.