Integrated circuit device

Abstract

An integrated circuit device having a semiconductor device and an encapsulating material on at least a portion of the semiconductor device and a method for encapsulating an integrated circuit device is disclosed. The encapsulating material includes a plurality of nanoparticles.

1 - 23 . (canceled)  
   
   
       24 . A method of encapsulating an integrated circuit device comprising: 
 providing a semiconductor device;    contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles, wherein the plurality of nanoparticles comprise a material selected from at least one of materials having a positive coefficient of thermal expansion and materials having a negative coefficient of thermal expansion, and wherein the content of nanoparticles in the encapsulant material is between about 1×10 −4  and 5×10 1  parts per weight.    
   
   
       25 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the plurality of nanoparticles are selected from oxides, nitrides, and sulfides.  
   
   
       26 . The method of encapsulating an integrated circuit device according to claim  1 , wherein the plurality of nanoparticles are coated with an antiagglomuant.  
   
   
       27 . The method of encapsulating an integrated circuit device according to  claim 24  further comprising: 
 adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.    
   
   
       28 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the plurality of nanoparticles have a mean diameter from about 1 nm to about 90 nm.  
   
   
       29 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the encapsulant material is selected from at least one of a ceramic and an epoxy.  
   
   
       30 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Ni—Ti alloys, ZrW 2 O 8 , ZrMo 2 O 8 , Y(WO 4 ) 3 , V doped ZrP 2 O 7 , ZrV 2 O 7 , ZnW, NaTi 2 , (Zr 2 O)(PO 4 ) 2 , Th 4 (PO 4 ) 4 P 2 O 7 , and AOMO 4 , where A=Nb or Ta, and M=P, As, or V.  
   
   
       31 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Zn, Se, Si, S, Fe, B, C, Ag, Al, Au, Co, Mo, Ni, W, Te, BN, titanium dioxide (TiO 2 ), magnesium oxide (MgO), yttria (YtO), zirconia (ZrO 2 ), silicon oxide (SiO x ), CeO x , alumina (Al 2 O 3 ), lead oxide (PbO x ), carbon nanotubes, a composite of yttria and zirconia, gallium nitride (GaN), silicon nitride, aluminum nitride, zinc selenide (ZnSe), zinc sulfide (ZnS), nanofibers, single and multi-walled nanotubes, III-V compounds, II-VI compounds, GaN, AlGaN, silicon nitride (Si 3 N 4 ), SiN, aluminum nitride, and the rare earth elements.  
   
   
       32 . The method of encapsulating an integrated circuit device according to  claim 24 , wherein the portion of the semiconductor device is contacted with the encapsulant using at least one of a resin transfer molding process and a liquid resin injection process.  
   
   
       33 . The method of encapsulating an integrated circuit device according to  claim 27 , wherein the anti-agglomuration coating is an organic coating.  
   
   
       34 . A method of fabricating an integrated circuit device, the method comprising: 
 providing a semiconductor device;    contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles having a negative coefficient of thermal expansion, wherein content of the nanoparticles in the encapsulant material is 70 wt % or less.    
   
   
       35 . The method of fabricating an integrated circuit device according to  claim 34 , wherein the plurality of nanoparticles are selected from at least one of Ni—Ti alloys, ZrW 2 O 8  ZrMo 2 O 8 , Y(WO 4 ) 3 , V doped ZrP 2 O 7 , ZrV 2 O 7 , ZnW, NaTi 2 , (Zr 2 O)(PO 4 ) 2 , Th 4 (PO 4 ) 4 P 2 O 7 , and AOMO 4 , where A=Nb or Ta, and M=P, As, or V.  
   
   
       36 . The method of encapsulating an integrated circuit device according to  claim 34 , wherein the plurality of nanoparticles are coated with an anti-agglomurant.  
   
   
       37 . The method of encapsulating an integrated circuit device according to  claim 34  further comprising: 
 adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.    
   
   
       38 . The method of encapsulating an integrated circuit device according to  claim 34 , wherein the plurality of nanoparticles have a mean diameter from about 1 nm to about 90 nm.  
   
   
       39 . The method of encapsulating an integrated circuit device according to  claim 34 , wherein the encapsulant material is selected from at least one of a ceramic and an epoxy.  
   
   
       40 . A method of controlling the thermal expansion of an encapsulated device, the method comprising: 
 providing a device to be encapsulated;    contacting at least a portion of the semiconductor device with an encapsulant material, the encapsulant material comprising a plurality of nanoparticles, wherein the plurality of nanoparticles comprise a material selected from at least one of materials having a positive coefficient of thermal expansion and materials having a negative coefficient of thermal expansion, and wherein the content of nanoparticles in the encapsulant material is between about 1×10 −4  and 5×10 1  parts per weight.    
   
   
       41 . The method of controlling the thermal expansion of an encapsulated device according  claim 40 , wherein the plurality of nanoparticles are selected from oxides, nitrides, and sulfides.  
   
   
       42 . The method of controlling the thermal expansion of an encapsulated device according to  claim 40 , wherein the plurality of nanoparticles are coated with an anti-agglomurant.  
   
   
       43 . The method of controlling the thermal expansion of an encapsulated device according to  claim 40  further comprising: 
 adjusting the coefficient of thermal expansion of the encapsulant material to be within ±20% of the coefficient of thermal expansion of the semiconductor device by controlling the amount of nanoparticles in the encapsulant material.    
   
   
       44 . The method of controlling the thermal expansion of an encapsulated device according to  claim 40 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Ni—Ti alloys, ZrW 2 O 8 , ZrMo 2 O 8 , Y(WO 4 ) 3 , V doped ZrP 2 O 7 , ZrV 2 O 7 , ZnW, NaTi 2 , (Zr 2 O)(PO 4 ) 2 , Th 4 (PO 4 ) 4 P 2 O 7 , and AOMO 4 , where A=Nb or Ta, and M=P, As, or V.  
   
   
       45 . The method of controlling the thermal expansion of an encapsulated device according to  claim 40 , wherein the plurality of nanoparticles are selected from a material comprising at least one of Zn, Se, Si, S, Fe, B, C, Ag, Al, Au, Co, Mo, Ni, W, Te, BN, titanium dioxide (TiO 2 ), magnesium oxide (MgO), yttria (YtO), zirconia (ZrO 2 ), silicon oxide (SiO x ), CeO x , alumina (Al 2 O 3 ), lead oxide (PbO x ), carbon nanotubes, a composite of yttria and zirconia, gallium nitride (GaN), silicon nitride, aluminum nitride, zinc selenide (ZnSe), zinc sulfide (ZnS), nanofibers, single and multi-walled nanotubes, III-V compounds, II-VI compounds, GaN, AlGaN, silicon nitride (Si 3 N 4 ), SiN, aluminum nitride, and the rare earth elements.