Method of fabricating multi layer MEMS and microfluidic devices

Abstract

A method for fabricating multi layer microelectromechanical and microfluidic devices is disclosed. Multi layer microelectromechanical and microfluidic devices are fabricated on a substrate with layers of predetermined weak and strong bond regions where deconstucted layers of devices at or on the weak bond regions. The layers are then peeled and subsequently bonded to produce a multi layer microelectromechanical and microfluidic devices. An arbitrary number of layers can be bonded and stacked to create either microelectromechanical or microfluidic device or a hyrbid type of device. Also disclosed are methods of creating edge interconnects and vias through the substrate to form interconnections between layers and devices thereon.

1 - 48 . (canceled)  
   
   
       49 . A multiple layer device comprising: 
 a first layer having at least a portion of a MEMS device;    a second layer selectively bonded to the first layer having a corresponding portion of a MEMs device corresponding to the portion of the MEMs device in or upon the first layer;    wherein selective bonding comprises weak bond regions and strong bond regions;    wherein said portion of the MEMs device on the first layer and the corresponding portion of the MEMs device are created at or on said weak bond regions.    
   
   
       50 . The device as in  claim 49 , wherein said portion of the MEMs device comprises an electrode.  
   
   
       51 . The device as in  claim 50 , wherein said corresponding portion of the MEMs device comprises an actuatable element disposed in relation to the electrode, wherein said electrode and said actuatable element vertically span said first layer and said second layer.  
   
   
       52 . The device as in  claim 49 , wherein said portion of the MEMs device comprises an actuatable element.  
   
   
       53 . The device as in  claim 52 , wherein said corresponding portion of the MEMs device comprises an electrode disposed in relation to the actuatable element, wherein said electrode and said actuatable element vertically span said first layer and said second layer.  
   
   
       54 . The device as in  claim 49 , wherein said MEMs device vertically spans said first layer and said second layer.  
   
   
       55 . The device as in  claim 49 , wherein a MEMs device formed by said portion of the MEMs device and said corresponding of the MEMs device is selected from the group of MEMs devices consisting of cantilevered structures, resonators, resonance detectors, micro-turbines, micro-gears, micro-turntables, optical switches, rigid switchable mirrors, membrane based switchable mirrors, V-groove joints acceleration sensors, pressure sensors, force sensors, torque sensors, flow sensors, magnetic field sensors, temperature sensors, gas composition sensors, humidity sensors, acidity sensors, fluid ionic concentration sensors, biological gas/liquid/molecular concentration sensors, micro-actuators, micro-pistons, or any combination comprising at least one of the foregoing MEMs devices.  
   
   
       56 . A multilayer device formed on a die comprising: 
 a multilayer device as in  claim 49 ,    wherein said die is formed by dicing said selectively bonded layers.    
   
   
       57 . The multilayer device of  claim 56 , wherein said die is rotated about its vertical axis to form a stack.  
   
   
       58 . A multiple layer device comprising: 
 a first layer having at least a portion of a microfluidic structure;    a second layer selectively bonded to the first layer having a corresponding portion of a microfluidic structure corresponding to the portion of the microfluidic structure in or upon the first layer;    wherein selective bonding comprises weak bond regions and strong bond regions;    wherein said portion of the microfluidic structure on the first layer and the corresponding portion of the microfluidic structure are created at or on said weak bond regions.    
   
   
       59 . The device as in  claim 58 , wherein said portion of the microfluidic structure comprises a port.  
   
   
       60 . The device as in  claim 59 , wherein said corresponding portion of the microfluidic structure device comprises a channel element disposed in relation to the port, wherein said channel and said port vertically span said first layer and said second layer.  
   
   
       61 . The device as in  claim 59 , wherein said portion of the microfluidic structure comprises a channel.  
   
   
       62 . The device as in  claim 61 , wherein said corresponding portion of the microfluidic structure comprises a port disposed in relation to the channel, wherein said port and said channel vertically span said first layer and said second layer.  
   
   
       63 . The device as in  claim 59 , wherein said microfluidic structure vertically spans said first layer and said second layer.  
   
   
       64 . A multilayer device formed on a die comprising: 
 a multilayer device as in  claim 59 ,    wherein said die is formed by dicing said selectively bonded layers.    
   
   
       65 . The multilayer device of  claim 64 , wherein said die is rotated about its vertical axis to form a stack.