Semiconductor processing methods of patterning materials

Abstract

The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

1 - 41 . (canceled)  
   
   
       42 . A semiconductor processing method, comprising: 
 providing a semiconductor substrate having an exposed metal layer;    forming a layer of silicon nitride on the metal layer;    depositing a nitrogen-free material in direct physical contact with the silicon nitride, the nitrogen-free material consisting essentially of silicon or conductively-doped silicon;    forming a patterned mask in direct contact with the nitrogen-free material;    patterning the nitrogen-free material, the metal layer, and the silicon nitride by transferring a pattern from the mask to the nitrogen-free material, the metal layer, and the silicon nitride; the patterned silicon nitride comprising a sidewall;    removing the mask;    forming a layer of silicon-comprising material over the nitrogen-free material; and    etching the layer of silicon-comprising material to form a spacer along the sidewall, the etching also removing the nitrogen-free material from over the silicon nitride.    
   
   
       43 . The method of  claim 42  wherein the mask comprises photoresist.  
   
   
       44 . The method of  claim 42  wherein the nitrogen-free material consists essentially of conductively-doped silicon.  
   
   
       45 . The method of  claim 42  wherein the silicon-comprising material comprises silicon nitride.  
   
   
       46 . The method of  claim 42  wherein the nitrogen-free material consists essentially of conductively-doped silicon, and wherein the silicon-comprising material comprises silicon nitride.  
   
   
       47 . A semiconductor processing method, comprising: 
 providing a metal layer over a semiconductor substrate;    forming a first material comprising silicon and nitrogen on the metal layer;    forming a second material over and in direct physical contact with the first material, the second material comprising silicon and less than  10 % nitrogen, by atom percent;    forming a patterned mask in direct physical contact with the second material;    transferring a pattern from the mask to the first and second materials, the patterned first material comprising a sidewall;    removing the mask;    after removing the mask, forming a third material in direct physical contact with the second material, wherein the third material consists essentially of either silicon dioxide or Si x O y N z , wherein x, y and z are each greater than 0; and    etching the layer of third material to form a spacer along the sidewall, the etching also removing the second material from over the first material.    
   
   
       48 . The method of  claim 47  wherein the mask comprises photoresist.  
   
   
       49 . The method of  claim 47  wherein the second material consists essentially of silicon.  
   
   
       50 . The method of  claim 47  wherein the second material consists essentially of conductively-doped silicon.  
   
   
       51 . The method of  claim 47  wherein the second material comprises oxygen.  
   
   
       52 . The method of  claim 47  wherein the second material comprises silicon dioxide.  
   
   
       53 . The method of  claim 47  wherein the second material comprises silicon and is substantially free of nitrogen, and wherein the third material consists essentially of silicon nitride.  
   
   
       54 . The method of  claim 47  wherein the second material comprises conductively-doped silicon and is substantially free of nitrogen, and the third material consists essentially of silicon nitride.