Substrate processing method and substrate processing apparatus

Abstract

Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

1 - 3 . (canceled)  
   
   
       4 . The substrate processing method comprising: 
 a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber;    a peripheral edge processing step for discharging a processing liquid to a lower main surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around to an upper main surface of the substrate at a peripheral edge thereof around a peripheral end surface of the substrate which is defined between the upper surface and the lower surface of the substrate, to process the peripheral edge of the upper surface of the substrate in the chamber; and    a both-surface processing step for discharging a processing liquid to both the main surfaces of the substrate rotated in the substrate rotating step to process both the main surfaces of the substrate in the chamber;    wherein the both-surface processing step comprises a pre-cleaning step for discharging a cleaning liquid to both the main surfaces of the substrate rotated in the substrate rotating step to clean the substrate before the peripheral edge processing step.    
   
   
       5 - 10 . (canceled)  
   
   
       11 . The substrate processing method according to  claim 4 , wherein the substrate processed in the peripheral edge processing step and the both-surface processing step has a metal thin film formed on one of its main surfaces and its end surface.  
   
   
       12 . The substrate processing method according to  claim 4 , wherein the cleaning liquid used in the pre-cleaning step is a particle removing liquid for removing particles adhering to the surface of the substrate.  
   
   
       13 . The substrate processing method according to  claim 4 , wherein the cleaning liquid used in the pre-cleaning step is a mixed solution of aqueous ammonia, hydrogen peroxide and water.  
   
   
       14 . The substrate processing method according to  claim 4 , wherein the processing liquid used in the peripheral edge processing step is an etchant.  
   
   
       15 . The substrate processing method according to  claim 4 , wherein the both-surface processing step comprises a post-cleaning step for discharging a cleaning liquid to both the main surfaces of the substrate rotated in the substrate rotating step to clean both the main surfaces of the substrate after the peripheral edge processing step.