Method for making guide panel for vertical probe card in batch

Abstract

A method for making a guide panel for a vertical probe card in batch includes the steps of a) preparing a non-metal substrate, b) forming a shielding layer having a plurality of openings on the substrate, c) etching a part of the substrate corresponding to the openings of the shielding layer by an anisotropic etching so as to form bind holes with a predetermined depth on the substrate, d) grinding the substrate to open the blind holes by a back side thinning technology so as to form micro feed through holes on the substrate, and e) removing the shielding layer so as to obtain the desired guide panel.

1 . A method for making a guide panel for a vertical probe card in batch, wherein the guide panel has a plurality of micro feed through holes for insertion of probe pins of the vertical probe card, said method comprising the steps of: 
 (a) preparing a non-metal substrate;    (b) forming a shielding layer having a plurality of openings with a predetermined pattern on said non-metal substrate; and    (c) forming a plurality of micro feed through holes on said non-metal substrate corresponding to said openings using by an anisotropic etching so as to obtain a guide panel having a plurality of micro feed through holes.    
   
   
       2 . The method as claimed in  claim 1 , wherein said non-metal substrate is made of a material selected from the group consisting of Si-based material, GaN-based material, GaAs-based material and InP-based material.  
   
   
       3 . The method as claimed in  claim 1 , wherein said non-metal substrate is made of a semiconductor material that accepts the anisotropic etching.  
   
   
       4 . The method as claimed in  claim 1 , wherein said non-metal substrate is made of glass or ceramic.  
   
   
       5 . The method as claimed in  claim 1 , wherein said non-metal substrate is made of a nonconductor material that accepts the anisotropic etching.  
   
   
       6 . The method as claimed in  claim 1 , wherein said shielding layer is formed of a photo resist.  
   
   
       7 . The method as claimed in  claim 1 , wherein the openings of said shielding layer are formed by the lithography technology.  
   
   
       8 . The method as claimed in  claim 1 , further comprising the step (d) of coating an insulative material on the guide panel obtained from the step (c).  
   
   
       9 . The method as claimed in  claim 8 , wherein the insulative material is selected from the group consisting of SiO 2 , Al 2 O 3 , and TiO 2 .  
   
   
       10 . The method as claimed in  claim 1 , further comprising the step (d) of coating a polymeric material on the guide panel obtained from the step (c).  
   
   
       11 . The method as claimed in  claim 10 , wherein said polymeric material is polyimide.  
   
   
       12 . The method as claimed in  claim 1 , further comprising the step of cutting the guide panel obtained from the step (c) into a plurality of small guide panels.  
   
   
       13 . The method as claimed in  claim 1 , wherein the step (b) includes the sub-steps of: 
 i) depositing an etching masking layer on said non-metal substrate;    ii) forming a shielding layer having a plurality of openings with a predetermined pattern on said etching masking layer;    iii) etching a part of said etching masking layer corresponding in location to the openings of said shielding layer by a reactive ion etching to form a plurality of apertures on said etching masking layer; and    iv) removing said shielding layer;    wherein the step (c) includes the sub-steps of:    i) etching a part of said non-metal substrate corresponding in location to the apertures to form a plurality of micro feed through holes by an anisotropic wet etching; and    ii) removing said etching masking layer so as to obtain the guide panel.    
   
   
       14 . The method as claimed in  claim 13 , wherein said non-metal substrate has a first side and a second side opposite to said first side, said first side being deposited with a first etching masking layer thereon, said second side being deposited with a second etching masking layer thereon; wherein said shielding layer is formed on said first etching masking layer and the apertures are formed on said first etching masking layer.  
   
   
       15 . The method as claimed in  claim 13 , wherein said anisotropic wet etching uses an etchant selected from the group consisting of KOH, ethylenediamine pyrocatechol, tetramethyl ammonium hydroxide and hydrazine.  
   
   
       16 . The method as claimed in  claim 13 , wherein said etching masking layer is formed of Si 3 N 4  by means of the low pressure chemical vapor deposition.  
   
   
       17 . The method as claimed in  claim 1 , wherein the anisotropic etching employed in the step (c) is an anisotropic dry etching.  
   
   
       18 . The method as claimed in  claim 17 , wherein the step (c) includes the sub-steps of: 
 i) forming a plurality of blind holes having a predetermined depth corresponding to the openings of said shielding layer on said substrate by the anisotropic dry etching; and    ii) grinding said substrate to open said blind holes, thereby obtaining the guide panel having a plurality of micro feed through holes.    
   
   
       19 . The method as claimed in  claim 17 , wherein said anisotropic dry etching is selected from the group consisting of inductively coupled plasma etching, plasma etching, ion beam etching, deep reactive ion etching and focus ion beam etching.  
   
   
       20 . The method as claimed in  claim 17 , wherein said non-metal substrate has a first side on which said shielding layer is form, and a second side opposite to said first side.  
   
   
       21 . The method as claimed in  claim 17 , wherein the step (b) includes the sub-steps of: 
 i) depositing an oxide layer on said non-metal substrate;    ii) forming a shielding layer having openings with a predetermined pattern on said oxide layer; and    iii) etching a part of said oxide layer corresponding in location to the openings by a reactive ion etching to form a plurality of apertures on said oxide layer corresponding to the openings.    
   
   
       22 . The method as claimed in  claim 21 , wherein said oxide layer is formed of SIO 2 .  
   
   
       23 . The method as claimed in  claim 17 , wherein the step (c) includes the sub-steps of: 
 i) etching said non-metal substrate to form a plurality of blind holes having a predetermined depth and diameter corresponding to the openings of said shielding layer by the anisotropic dry etching;    ii) depositing a nitride layer on said first shielding layer and the peripheries of said openings and blind holes;    iii) forming a second shielding layer having through holes corresponding to the openings of said first shielding layer on said first shielding layer;    iv) removing said nitride layer at a bottom side of each of said blind holes by a reactive ion etching;    v) deepening said blind holes by the anisotropic dry etching; and    vi) removing said first shielding layer and said second shielding layer; and    vii) removing the nitride layer.    
   
   
       24 . The method as claimed in  claim 23 , wherein said non-metal substrate has a first side and a second side opposite to said first side, said first side being deposited with a first oxide layer thereon, said second side being deposited a second oxide layer thereon; wherein said first shielding layer is covered on said first oxide layer.  
   
   
       25 . The method as claimed in  claim 24 , wherein said nitride layer is deposited a low pressure chemical vapor deposition.  
   
   
       26 . The method as claimed in  claim 1 , wherein the steps (b) and (c) include the sub-steps of: 
 i) forming a first oxide layer and a second oxide layer on a first side and a second side of said non-metal substrate respectively;    ii) forming a first nitride layer and a second nitride layer on said first oxide layer and said second oxide layer respectively;    iii) forming a first shielding layer having an opening on said second nitride layer and then removing a part of said second nitride layer and a part of said second oxide layer corresponding in location to the opening of said first shielding layer by a reactive ion etching;    iv) etching said no-metal substrate by an anisotropic wet etching to form a recessed portion on said non-metal substrate corresponding in location to the opening of said first shielding layer;    v) removing said first shielding layer and said first and second nitride layers;    vi) etching said first oxide layer by a reactive ion etching to form a plurality of first and second apertures with a predetermined pattern on said first oxide layer, wherein the second apertures have a diameter grater than that of the first apertures;    vii) forming a second shielding layer on said first oxide layer, said second shielding layer having through holes in communication with the first and second apertures on said first oxide layer;    viii) etching said non-metal substrate by an anisotropic dry etching to form a plurality of blind holes on said non-metal substrate corresponding in location to said first and second apertures;    ix) removing said second shielding layer;    x) deepening said blind holes of said non-metal substrate by an anisotropic dry etching;    xi) removing said first oxide layer and said second oxide layer so as to obtain a guide panel having a recessed portion.    
   
   
       27 . A guide panel for a vertical probe card, comprising: 
 a non-metal substrate having a plurality of micro feed through holes formed by an anisotropic etching for insertion of probes of a vertical probe card.    
   
   
       28 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is made of a material selected from the group consisting of Si-based material, GaN-based material, GaAs-based material and InP-based material.  
   
   
       29 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is made of a semiconductor material that accepts the anisotropic etching.  
   
   
       30 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is made of glass or ceramic.  
   
   
       31 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is made of a nonconductor material that accepts the anisotropic etching.  
   
   
       32 . The guide panel as claimed in  claim 27 , wherein said anisotropic etching is an anisotropic wet etching.  
   
   
       33 . The guide panel as claimed in  claim 32 , wherein said anisotropic wet etching uses an etchant selected from the group consisting of KOH, ethylenediamine pyrocatechol, tetramethyl ammonium hydroxide and hydrazine.  
   
   
       34 . The guide panel as claimed in  claim 27 , wherein said anisotropic etching is an anisotropic dry etching.  
   
   
       35 . The guide panel as claimed in  claim 34 , wherein said anisotropic dry etching is selected from the group consisting of inductively coupled plasma etching, plasma etching, ion beam etching, deep reactive ion etching and focus ion beam etching.  
   
   
       36 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is coated with a layer of insulative material.  
   
   
       37 . The guide panel as claimed in  claim 36 , wherein the insulative material is selected from the group consisting of SiO 2 , Al 2 O 3 , and TiO 2 .  
   
   
       38 . The guide panel as claimed in  claim 27 , wherein said non-metal substrate is coated with a layer of polymeric material.  
   
   
       39 . The guide panel as claimed in  claim 38 , wherein said polymeric material is polyimide.