Semi-Insulating Bulk Zinc Oxide Single Crystal

Abstract

A semi-insulating zinc-oxide (ZnO) single crystal. The crystal has resistivity of at least 1.5×10 3 ohm-centimeter (Ω-cm). The ZnO crystal can be produced from a melt contained by solid-phase ZnO to prevent introduction of undesired impurities into the crystal. The crystal can be a bulk single crystal that is cut and processed into wafer form of specified thickness. A dopant in a concentration ranging from 1×10 15 atoms per cubic centimeter (atoms/cc) to 5×10 21 atoms/cc can increase resistivity of the crystal relative to intrinsic ZnO. The dopant can be lithium (Li), sodium (Na), copper (Cu), nitrogen (N), phosphorus (P), and/or manganese (Mn).

1 . A semi-insulating zinc-oxide (ZnO) bulk single crystal having a resistivity in a range from 1.5×10 3  to 10 4  ohm-centimeter (Ω-cm) and 10 6  Ω-cm to 10 8  Ω-cm.  
   
   
       2 . The crystal of  claim 1  wherein the resistivity of the crystal is sufficient to achieve electrical isolation of a device to be formed thereon.  
   
   
       3 . The crystal of  claim 1  wherein the crystal is produced from a melt so that the semi-insulating ZnO bulk single crystal has a purity and composition required to obtain electrical isolation of a device formed thereon.  
   
   
       4 . The crystal in  claim 1  wherein the crystal is a substrate that is grown as a bulk single crystal, cut, and processed to a specified thickness.  
   
   
       5 . The crystal in  claim 1  wherein the crystal contains a dopant that increases the resistivity of the crystal relative to intrinsic ZnO.  
   
   
       6 . The crystal of  claim 5  wherein the dopant is added to the ZnO single crystal in an atomic concentration ranging from 1×10 15  atoms per cubic centimeter (atoms/cc) to 5×10 21  atoms/cc.  
   
   
       7 . The crystal of  claim 5  wherein the dopant comprises lithium (Li).  
   
   
       8 . The crystal of  claim 5  wherein the dopant comprises sodium (Na).  
   
   
       9 . The crystal of  claim 5  wherein the dopant comprises copper (Cu).  
   
   
       10 . The crystal of  claim 5  wherein the dopant comprises nitrogen (N).  
   
   
       11 . The crystal of  claim 5  wherein the dopant comprises phosphorus (P).  
   
   
       12 . The crystal of  claim 5  wherein the dopant comprises manganese (Mn).  
   
   
       13 . The crystal of  claim 1  wherein the resistivity is attained by making the crystal stoichiometric by adding oxygen (O).