Film forming method and method of manufacturing semiconductor device

Abstract

A film forming method for forming an arsenic-doped silicon layer (epitaxially grown silicon layer) by epitaxial growth includes the step of supplying a gas containing arsenic as a dopant into the atmosphere for the epitaxial growth while keeping the epitaxial growth atmosphere at the atmospheric pressure.

1 . A film forming method for forming an arsenic-doped silicon layer by epitaxial growth, comprising the step of 
 supplying a gas containing arsenic as a dopant into the atmosphere for said epitaxial growth while keeping said epitaxial growth atmosphere at the atmospheric pressure.    
   
   
       2 . The film forming method as set forth in  claim 1 , wherein 
 a hydrogen chloride gas is introduced into said epitaxial growth atmosphere.    
   
   
       3 . A method of manufacturing a semiconductor device, comprising the step of 
 forming an arsenic-doped silicon layer on source/drain regions formed in a silicon substrate by selective epitaxial growth, wherein    said step of forming said arsenic-doped silicon layer 
 includes the step of supplying a gas containing arsenic as a dopant into the atmosphere for said selective epitaxial growth while keeping said selective epitaxial growth atmosphere at the atmospheric pressure.