Non-polar (a1,b,in,ga)n quantum wells

Abstract

A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

1 . A method for forming a nitride semiconductor device, comprising: 
 (a) growing one or more gallium nitride (GaN) layers on a substrate; and    (b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å to approximately 70 Å.    
     
     
         2 . The method of  claim 1 , wherein a maximum emission intensity is associated with a quantum well width of approximately 50 Å.  
     
     
         3 . The method of  claim 1 , wherein the quantum well has an optimal width of 52 Å.  
     
     
         4 . The method of  claim 1 , wherein a resistive nature of the GaN layers prevents band edge emission at room temperature, resulting in emissions only from the quantum well.  
     
     
         5 . The method of  claim 1 , wherein the GaN layers are non-polar a-plane GaN layers and the substrate is an r-plane substrate.  
     
     
         6 . The method of  claim 1 , wherein the substrate is a sapphire substrate.  
     
     
         7 . The method of  claim 1 , wherein the growing step (a) comprises: 
 (1) annealing the substrate;    (2) depositing a nitride-based nucleation layer on the substrate;    (3) growing the GaN layer on the nucleation layer; and    (4) cooling the GaN under a nitrogen overpressure.    
     
     
         8 . The method of  claim 1 , wherein the growing steps are performed by a method selected from a group comprising metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), hydride vapor phase epitaxy (HVPE), sublimation, and plasma-enhanced chemical vapor deposition (PECVD).  
     
     
         9 . A device manufactured using the method of  claim 1 .  
     
     
         10 . A nitride semiconductor device, wherein the nitride semiconductor device is created using a process comprising: 
 (a) growing one or more gallium nitride (GaN) layers on a substrate; and    (b) growing one or more non-polar (Al,B,In,Ga)N layers on the GaN layers to form at least one quantum well ranging in width from approximately 20 Å to approximately 70 Å.    
     
     
         11 . A nitride semiconductor device, comprising: 
 (a) one or more gallium nitride (GaN) layers grown on a substrate; and    (b) one or more quantum wells formed from one or more non-polar (Al,B,In,Ga)N layers grown on the GaN layers, wherein the quantum well has a width ranging from approximately 20 Å to approximately 70 Å.