Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus comprises a multifunctional nozzle having a double-pipe structure. An inner flow path of the multifunctional nozzle is connected to a first supply suction system through a supply suction pipe. An outer flow path is connected to a second supply suction system through the supply suction pipe. The first supply suction system and the second supply suction system have respectively chemical liquid supply sources, rinse liquid supply sources, inert gas supply sources, and ejectors. Such a configuration makes it possible to selectively supply the chemical liquid, supply the rinse liquid, and supply the inert gas and suck in through the inner flow path and the outer flow path of the multifunctional nozzle.

1 . A substrate processing apparatus comprising: 
 a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening and discharges a chemical liquid for processing a substrate from said first end opening;    a chemical liquid supply system that is connected to said first flow path and supplies the chemical liquid; and    a suction device that is connected to said second flow path and applies suction through said second flow path.    
   
   
       2 . The substrate processing apparatus according to  claim 1 , wherein said suction device applies suction through the second flow path after the discharge of the chemical liquid through said first flow path from said chemical liquid supply system is completed.  
   
   
       3 . The substrate processing apparatus according to  claim 1 , wherein said suction device applies suction through said second flow path in a time period during which the chemical liquid is discharged through said first flow path from the chemical liquid supply system.  
   
   
       4 . The substrate processing apparatus according to claim  1 , further comprising a first guide member that is opposed to said first end opening and said second end opening and guides into said second end opening the chemical liquid discharged through said first flow path.  
   
   
       5 . The substrate processing apparatus according to  claim 1 , further comprising an inert gas supply system that is connected to said first flow path and supplies an inert gas.  
   
   
       6 . The substrate processing apparatus according to  claim 5 , wherein the inert gas is discharged through said first flow path from said inert gas supply system after the discharge of the chemical liquid through the first flow path from said chemical liquid supply system is completed.  
   
   
       7 . The substrate processing apparatus according to  claim 5 , wherein said suction device applies suction through said second flow path in a time period during which the inert gas is discharged through said first flow path from said inert gas supply system.  
   
   
       8 . The substrate processing apparatus according to  claim 1 , further comprising an inert gas supply system that is connected to said second flow path and supplies an inert gas.  
   
   
       9 . The substrate processing apparatus according to  claim 1 , further comprising a rinse liquid supply system that is connected to said first flow path and supplies a rinse liquid.  
   
   
       10 . The substrate processing apparatus according to  claim 9 , wherein the rinse liquid is discharged through said first flow path from said rinse liquid supply system after the discharge of the chemical liquid through said first flow path from said chemical liquid supply system is completed.  
   
   
       11 . The substrate processing apparatus according to  claim 9 , wherein said suction device applies suction through said second flow path in a time period during which the rinse liquid is discharged through said first flow path from said rinse liquid supply system.  
   
   
       12 . The substrate processing apparatus according to  claim 11 , further comprising a second guide member that is opposed to said first end opening and said second end opening and guides into said second end opening the rinse liquid discharged through said first flow path.  
   
   
       13 . The substrate processing apparatus according to  claim 1 , further comprising a rinse liquid supply system that is connected to said second flowpath and supplies a rinse liquid.  
   
   
       14 . The substrate processing apparatus according to  claim 1 , further comprising 
 an inert gas supply system that is connected to said first flow path and supplies an inert gas, and    a rinse liquid supply system that is connected to said first flow path and supplies a rinse liquid,    said suction device applying suction through said second flow path in a time period during which the chemical liquid is discharged through said first flow path from said chemical liquid supply system,    said suction device applying suction through said second flow path in a time period during which the rinse liquid is discharged through said first flow path from said rinse liquid supply system, and    said suction device applying suction through said second flow path in a time period during which the inert gas is discharged through said first flow path from said inert gas supply system.    
   
   
       15 . A substrate processing apparatus comprising 
 a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening and discharges a chemical liquid for processing a substrate from said first end opening;    a chemical liquid supply system that is connected to said first flow path and supplies the chemical liquid;    a suction device that is connected to said first flow path and applies suction through said first flow path; and    an inert gas supply system that is connected to said second flow path and supplies an inert gas.    
   
   
       16 . The substrate processing apparatus according to  claim 15 , further comprising a rinse liquid supply system that is connected to at least one of said first flow path and said second flow path and supplies a rinse liquid.  
   
   
       17 . A substrate processing apparatus comprising: 
 a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening and discharges a chemical liquid for processing a substrate from said first end opening;    a chemical liquid supply system that is connected to said first flow path and supplies the chemical liquid;    a suction device that is connected to said first flow path and applies suction through said first flow path; and    a rinse liquid supply system that is connected to said second flow path and supplies a rinse liquid.    
   
   
       18 . The substrate processing apparatus according to  claim 17 , further comprising an inert gas supply system that is connected to at least one of said first flow path and said second flow path and supplies an inert gas.  
   
   
       19 . The substrate processing apparatus according to  claim 1 , wherein either one of said first end opening and said second end opening is provided so as to surround the other end opening.  
   
   
       20 . The substrate processing apparatus according to  claim 19 , wherein either one of said first flow path and said second flow path is formed within a tubular first member, and the other flow path is formed between said first member and a tubular second member having an inner peripheral surface surrounding an outer peripheral surface of said first member.  
   
   
       21 . The substrate processing apparatus according to  claim 20 , wherein a tip of said second member projects farther than a tip of said first member.  
   
   
       22 . The substrate processing apparatus according to  claim 20 , wherein said second member is so formed that the inner peripheral surface at its tip portion progressively comes closer to the outer peripheral surface of said first member toward its tip.  
   
   
       23 . A substrate processing method comprising the steps of: 
 positioning a nozzle having a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening above a substrate;    discharging a chemical liquid through said first flow path after said step of positioning the nozzle above the substrate; and    applying suction through said second flow path during or after said step of discharging the chemical liquid.    
   
   
       24 . The substrate processing apparatus according to  claim 23 , further comprising the step of discharging an inert gas through at least one of said first flow path and said second flow path during or after said step of discharging the chemical liquid.  
   
   
       25 . The substrate processing apparatus according to  claim 23 , further comprising the step of discharging a rinse liquid through at least one of said first flow path and said second flow path during or after said step of discharging the chemical liquid.  
   
   
       26 . The substrate processing apparatus according to  claim 23 , wherein said step of discharging the chemical liquid comprises said step of discharging the chemical liquid toward the substrate through said first flow path to process the substrate.  
   
   
       27 . The substrate processing method according to  claim 26 , further comprising 
 a nozzle retracting step for retracting said nozzle from above the substrate after said step of processing the substrate,    said step of discharging the chemical liquid further comprising the step of discharging the chemical liquid through said first flow path after said nozzle retracting step, to clean a deposit of the chemical liquid adhering to the vicinity of the first end opening of said nozzle.