Nanocomposite photosensitive composition and use thereof

Abstract

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator

1 . A process of forming a negative photoresist image on a substrate, comprising the steps of: 
 (a) coating a photoresist composition comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers on a substrate;    (b) image-wise exposing the coated substrate to actinic radiation; and    (c) developing the exposed substrate to form the photoresist image, thereby forming a photoresist coating film with a thickness greater than 5 microns.    
   
   
       2 . The process of  claim 1  wherein for (a), the negative photoresist composition is selected from 
 (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or    (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or    (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.    
   
   
       3 . The process of  claim 1  where the photoresist coating film thickness is greater than 10 microns.  
   
   
       4 . The process of  claim 1 , where the photoresist coating film thickness is greater than 20 microns.  
   
   
       5 . The process of  claim 1 , where the photoresist coating film thickness is less than 150 microns.  
   
   
       6 . The process of  claim 1 , wherein for (a), the inorganic particle material is colloidal silica.  
   
   
       7 . The process of  claim 1 , wherein for (a), the inorganic particle material has an average particle size from greater than about 10 to about 50 nanometers.  
   
   
       8 . The process of  claim 1 , wherein for (a), the inorganic particle material is present in an amount of from about 0.1% and about 90% by weight of the photoresist.  
   
   
       9 . A substrate having formed thereon a photoresist coating film having a film thickness greater than 5 microns after exposure and development, the photoresist coating film formed from a composition comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers.  
   
   
       10 . The substrate of  claim 9 , wherein the film thickness is greater than 10 microns.  
   
   
       11 . The substrate of  claim 9 , wherein the inorganic particle material is colloidal silica having an average particle size from greater than about 10 to about 50 nanometers.  
   
   
       12 . The substrate of  claim 9 , wherein the inorganic particle material is present in an amount of from about 0.1% and about 90% by weight of the photoresist.  
   
   
       13 . A method of making photoresist composition suitable for image-wise exposure and development wherein the photoresist composition is capable of forming a photoresist coating film with a thickness greater than 5 microns after exposure and development comprising dispersing an inorganic particle material having an average particle size equal or greater than 10 nanometers in propylene glycol mono-methyl ether; and adding the dispersed inorganic particle material to a negative photoresist composition.  
   
   
       14 . The method of  claim 13 , wherein the film thickness is greater than 10 microns.  
   
   
       14 . The method of  claim 13 , wherein the inorganic particle material is colloidal silica having an average particle size from greater than about 10 to about 50 nanometers.  
   
   
       15 . The method of  claim 13 , wherein the inorganic particle material is present in an amount of from about 0.1% and about 90% by weight of the photoresist.  
   
   
       16 . The method of  claim 13  wherein the negative photoresist composition is selected from 
 (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or    (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or    (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.