US2007145361A1PendingUtilityA1

Organic semiconductor material and organic electronic device

62
Assignee: MITSUBISHI CHEM CORPPriority: Mar 27, 2002Filed: Feb 5, 2007Published: Jun 28, 2007
Est. expiryMar 27, 2022(expired)· nominal 20-yr term from priority
Inventors:Shinji AramakiNoboru Ono
C07D 513/22C07D 519/00C07D 487/22H10K 85/30H10K 85/654H10K 85/6572H10K 85/615H10K 85/6574H10K 85/381H10K 10/466H10K 85/6576
62
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Claims

Abstract

An organic semiconductor material comprising a compound which has a generalized porphyrin skeleton and which has a molecular structure such that the distance from the generalized porphyrin ring plane to the center of each atom forming the generalized porphyrin skeleton, is not more than 1 Å

Claims

exact text as granted — not AI-modified
1 .- 30 . (canceled)  
     
     
         31 . An organic electronic device comprising a semiconductor layer formed by conversion from a precursor, a protective layer formed directly or via another layer, on the semiconductor layer, and at least two electrodes.  
     
     
         32 . The organic electronic device according to  claim 31 , wherein the protective layer contains a polymer.  
     
     
         33 . The organic electronic device according to  claim 31 , wherein the precursor has a bicyclo structure.  
     
     
         34 . The organic electronic device according to  claim 31 , wherein the semiconductor contains a generalized porphyrin compound.  
     
     
         35 . The organic electronic device according to  claim 34 , wherein said generalized porphyrin compound is a compound which has a porphyrin skeleton and which has a molecular structure such that the distance from the porphyrin ring plane to the center of each atom forming the porphyrin skeleton, is not more than 1 Å.  
     
     
         36 . The organic electronic device according to  claim 35 , wherein the generalized porphyrin compound has a mobility of at least 1×10 −5  cm 2 /Vs.  
     
     
         37 . The organic electronic device according to  claim 35 , wherein the generalized porphyrin compound has a molecular weight of at most 2,000.  
     
     
         38 . The organic electronic device according to  claim 35 , wherein the generalized porphyrin compound is a benzoporphyrin.  
     
     
         39 . The organic electronic device according to  claim 35 , wherein the generalized porphyrin compound contains no metal.  
     
     
         40 . The organic electronic device according to  claim 35 , wherein the generalized porphyrin compound contains copper.  
     
     
         41 . An organic electronic device comprising a semiconductor layer which is a generalized porphyrin compound formed by conversion from a precursor, an insulating layer containing a polymer, and at least two electrodes.  
     
     
         42 . The organic electronic device according to  claim 41 , wherein the precursor has a bicyclo structure.  
     
     
         43 . The organic electronic device according to  claim 41 , wherein said generalized porphyrin compound is a compound which has a porphyrin skeleton and which has a molecular structure such that the distance from the porphyrin ring plane to the center of each atom forming the porphyrin skeleton, is not more than 1 Å.  
     
     
         44 . The organic electronic device according to  claim 41 , wherein the generalized porphyrin compound has a mobility of at least 1×10 −5  cm 2 /Vs.  
     
     
         45 . The organic electronic device according to  claim 41 , wherein the generalized porphyrin compound has a molecular weight of at most 2,000.  
     
     
         46 . The organic electronic device according to  claim 41 , wherein the generalized porphyrin compound is a benzoporphyrin.  
     
     
         47 . The organic electronic device according to  claim 41 , wherein the generalized porphyrin compound contains no metal.  
     
     
         48 . The organic electronic device according to  claim 41 , wherein the generalized porphyrin compound contains copper.  
     
     
         49 . A method for producing an organic electronic device comprising a semiconductor layer, a protective layer formed directly or via another layer, on the semiconductor layer, and at least two electrodes, characterized in that the semiconductor layer is produced by converting a precursor.  
     
     
         50 . The method according to  claim 49 , wherein the protective layer contains a polymer.  
     
     
         51 . The method according to  claim 49 , wherein the semiconductor layer is produced by forming a film of the precursor by a coating process and then converting the precursor to form the semiconductor layer.  
     
     
         52 . The method according to  claim 49 , wherein the conversion of the precursor is conducted by change of its chemical structure.  
     
     
         53 . The method according to  claim 49 , wherein the conversion of the precursor is conducted by heating.  
     
     
         54 . The method according to  claim 49 , wherein the precursor has a bicyclo structure.  
     
     
         55 . The method according to  claim 49 , wherein the semiconductor is a generalized porphyrin compound.  
     
     
         56 . The method according to  claim 55 , wherein said generalized porphyrin compound is a compound which has a porphyrin skeleton and which has a molecular structure such that the distance from the porphyrin ring plane to the center of each atom forming the porphyrin skeleton, is not more than 1 Å.  
     
     
         57 . The method according to  claim 55 , wherein the generalized porphyrin compound has a mobility of at least 1×10 −5  cm 2 /Vs.  
     
     
         58 . The method according to  claim 55 , wherein the generalized porphyrin compound has a molecular weight of at most 2,000.  
     
     
         59 . The method according to  claim 55 , wherein the generalized porphyrin compound is a benzoporphyrin.  
     
     
         60 . The method according to  claim 55 , wherein the generalized porphyrin compound contains no metal.  
     
     
         61 . The method according to  claim 55 , wherein the generalized porphyrin compound contains copper.  
     
     
         62 . A method for producing an organic electronic device comprising a semiconductor layer containing a generalized porphyrin compound, an insulating layer containing a polymer, and at least two electrodes, characterized in that the semiconductor layer is produced by converting a precursor.  
     
     
         63 . The method according to  claim 62 , wherein the semiconductor layer is produced by forming a film of the precursor by a coating method and then converting the precursor to form the semiconductor layer.  
     
     
         64 . The method according to  claim 62 , wherein the conversion of the precursor is conducted by change of its chemical structure.  
     
     
         65 . The method according to  claim 62 , wherein the conversion is conducted by heating.  
     
     
         66 . The method according to  claim 62 , wherein the precursor has a bicycle structure.  
     
     
         67 . The method according to  claim 62 , wherein the semiconductor is a generalized porphyrin compound.  
     
     
         68 . The method according to  claim 67 , wherein said generalized porphyrin compound is a compound which has a porphyrin skeleton and which has a molecular structure such that the distance from the porphyrin ring plane to the center of each atom forming the porphyrin skeleton, is not more than 1 Å.  
     
     
         69 . The method according to  claim 67 , wherein the generalized porphyrin compound has a mobility of at least 1×10 −5  cm 2 /Vs.  
     
     
         70 . The method according to  claim 67 , wherein the generalized porphyrin compound has a molecular weight of at most 2,000.  
     
     
         71 . The method according to  claim 67 , wherein the generalized porphyrin compound is a benzoporphyrin.  
     
     
         72 . The method according to  claim 67 , wherein the generalized porphyrin compound contains no metal.  
     
     
         73 . The method according to  claim 67 , wherein the generalized porphyrin compound contains copper.

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