Semiconductor device and method of manufacturing the same

Abstract

This disclosure concerns a manufacturing method of a semiconductor device includes forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film; forming a gate insulation film on side surfaces of the Fin-type body; depositing a gate electrode material so as to cover the Fin-type body; planarizing the gate electrode material; forming a gate electrode by processing the gate electrode material; depositing an interlayer insulation film so as to cover the gate electrode; exposing the upper surface of the gate electrode; depositing a metal layer on the upper surface of the gate electrode; siliciding the gate electrode by reacting the gate electrode with the metal layer; forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and filling the trench with a conductor.

1 . A manufacturing method of a semiconductor device, comprising: 
 forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material so as to cover the Fin-type body;    planarizing the gate electrode material;    forming a gate electrode by processing the gate electrode material;    depositing an interlayer insulation film so as to cover the gate electrode;    exposing the upper surface of the gate electrode;    depositing a metal layer on the upper surface of the gate electrode;    siliciding the gate electrode by reacting the gate electrode with the metal layer;    forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and    filling the trench with a conductor.    
   
   
       2 . The manufacturing method of a semiconductor device according to  claim 1 , wherein 
 the metal layer includes any one of nickel, tungsten, platinum, cobalt, molybdenum, titanium, erbium, ytterbium and palladium.    
   
   
       3 . A manufacturing method of a semiconductor device, comprising: 
 forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material so as to cover the Fin-type body;    exposing the upper surface of the protective film by flattening the gate electrode material;    depositing a cap material different from the gate electrode material on the gate electrode material and the protective film;    forming a gate electrode and a cap covering the upper surface of the gate electrode by processing the gate electrode material and the cap material;    depositing an interlayer insulation film so as to cover the gate electrode and the cap;    exposing the upper surface of the cap by planarizing the interlayer insulation film;    exposing the upper surfaces of the gate electrode and the protective film by removing the cap as well as forming a trench on the upper surfaces of the gate electrode and the protective film;    depositing a metal layer on the upper surface of the gate electrode;    siliciding the gate electrode by reacting the gate electrode with the metal layer;    removing an unreacted metal in the metal layer; and    filling the trenches with a conductor.    
   
   
       4 . The manufacturing method of a semiconductor device according to  claim 3 , wherein 
 the metal layer includes any one of nickel, tungsten, platinum, cobalt, molybdenum, titanium, erbium, ytterbium and palladium.    
   
   
       5 . A manufacturing method of a semiconductor device, comprising: 
 forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material on the gate insulation film;    depositing a covering material different from the gate electrode material so as to cover the Fin-type body and the gate electrode material;    planarizing the covering material;    forming a gate electrode and a cover covering the upper surface of the gate electrode by processing the gate electrode material and the covering material;    forming a gate side wall on side surfaces of the gate electrode and the cover;    depositing an interlayer insulation film so as to cover the gate electrode and the cover;    exposing the upper surface of the cover by planarizing the interlayer insulation film;    forming a trench on the upper surface and side surfaces of the gate electrode by removing the cover;    depositing a metal layer on the upper surface and the side surfaces of the gate electrode;    siliciding the gate electrode by reacting the gate electrode with the metal layer; and    removing an unreacted metal in the metal layer; and    filling the trenches with a conductor.    
   
   
       6 . The manufacturing method of a semiconductor device according to  claim 5 , wherein 
 the metal layer includes any one of nickel, tungsten, platinum, cobalt, molybdenum, titanium, erbium, ytterbium and palladium.    
   
   
       7 . A manufacturing method of a semiconductor device, comprising: 
 forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material so as to cover the Fin-type body;    depositing a first insulation film so as to cover the gate electrode material;    depositing a second insulation film so as to cover the first insulation film;    planarizing the second insulation film;    patterning the second insulation film into a gate electrode pattern;    patterning the first insulation film into the gate electrode pattern by using the second insulation film as a mask;    patterning the gate electrode material into the gate electrode pattern by using the first insulation film as a mask;    depositing a metal layer on the gate electrode; and    siliciding the gate electrode by reacting the gate electrode with the metal layer.    
   
   
       8 . The manufacturing method of a semiconductor device according to  claim 7 , wherein 
 the first insulation film is a silicon nitride film, and    the second insulation film is a silicon oxide film.    
   
   
       9 . The manufacturing method of a semiconductor device according to  claim 7 , wherein 
 the metal layer includes any one of nickel, tungsten, platinum, cobalt, molybdenum, titanium, erbium, ytterbium and palladium.    
   
   
       10 . A manufacturing method of a semiconductor device, comprising: 
 forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material so as to cover the Fin-type body;    depositing a mask insulation layer so as to cover the gate electrode material;    planarizing the mask insulation layer;    patterning the mask insulation layer into a gate electrode pattern; and    forming a gate electrode by patterning the gate electrode material into the gate electrode pattern using the mask insulation layer as a mask.    
   
   
       11 . The manufacturing method of a semiconductor device according to  claim 10 , wherein 
 the mask insulation layer is a silicon germanium film.    
   
   
       12 . The manufacturing method of a semiconductor device according to  claim 10 , wherein 
 the metal layer includes any one of nickel, tungsten, platinum, cobalt, molybdenum, titanium, erbium, ytterbium and palladium.    
   
   
       13 . A method of manufacturing a semiconductor device, comprising: 
 sequentially depositing a first insulation film, a conductor, and a second insulation film on a semiconductor layer;    patterning the second insulation film;    forming a Fin-type body by etching the conductor, the first insulation film, and the semiconductor layer using the second insulation film as a mask after patterning the second insulation film;    forming a gate insulation film on side surfaces of the Fin-type body;    depositing a gate electrode material so as to cover the Fin-type body;    etching the gate electrode material to a level lower than the bottom surface of the conductor;    removing the gate insulation film formed on the side surfaces of the conductor;    further depositing the gate electrode material so as to cover the conductor and the second insulation film;    flattening the gate electrode material;    patterning the gate electrode material into a gate electrode pattern; and    forming the gate electrode by patterning the gate electrode material into the gate electrode pattern using the mask insulation film as a mask.    
   
   
       14 . The manufacturing method of a semiconductor device according to  claim 13 , wherein 
 when depositing the gate electrode material so as to cover the conductor and the second insulation film, the gate electrode material is deposited by a CVD method or an epitaxial growth.    
   
   
       15 . The manufacturing method of a semiconductor device according to  claim 13 , wherein 
 the conductor is a metal includes any one of nickel, tungsten, platinum, cobalt, molybdenum, aluminum, tantalum, titanium, erbium, ytterbium and palladium, or a semiconductor material includes any one of germanium and silicon.    
   
   
       16 . The manufacturing method of a semiconductor device according to  claim 13 , wherein 
 the gate insulation film is made of a high dielectric material having a dielectric constant higher than that of the silicon oxide film.    
   
   
       17 . A semiconductor device comprising: 
 an insulation layer;    a Fin-type body formed on the insulation layer and made of a semiconductor material;    a gate insulation film formed on side surfaces of the Fin-type body;    a gate electrode having portions formed on both the side surfaces of the Fin-type body; and    a conductor formed on the Fin-type body for connecting the portion of the gate electrode on one side surface of the Fin-type body to the portion thereof on the other side of the Fin-type body.    
   
   
       18 . The semiconductor device according to  claim 17 , wherein 
 the conductor is provided below a level of the upper surface of the gate electrode.    
   
   
       19 . The semiconductor device according to  claim 17 , wherein 
 the conductor is a metal includes any one of nickel, tungsten, platinum, cobalt, molybdenum, aluminum, tantalum, titanium, erbium, ytterbium and palladium, or a semiconductor material includes any one of germanium and silicon.    
   
   
       20 . The semiconductor device according to  claim 18 , wherein 
 the conductor is a metal includes any one of nickel, tungsten, platinum, cobalt, molybdenum, aluminum, tantalum, titanium, erbium, ytterbium and palladium, or a semiconductor material includes any one of germanium and silicon.