Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate

Abstract

The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.

1 . A nozzle comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       2 . The nozzle of  claim 1 , wherein the heat sink holder comprises molybdenum.  
   
   
       3 . The nozzle of  claim 1 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       4 . The nozzle of  claim 3 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       5 . The nozzle of  claim 1 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       6 . The nozzle of  claim 1 , wherein the nozzle is used in a high pressure waterjet cutting apparatus.  
   
   
       7 . A cutting blade for a surgical instrument comprising a cutting edge comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       8 . The cutting blade of  claim 7 , wherein the heat sink holder comprises molybdenum.  
   
   
       9 . The cutting blade of  claim 7 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       10 . The cutting blade of  claim 9 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       11 . The cutting blade of  claim 7 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       12 . A cutting instrument comprising a cutting edge comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       13 . The cutting instrument of  claim 12 , wherein the heat sink holder comprises molybdenum.  
   
   
       14 . The cutting instrument of  claim 12 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       15 . The cutting instrument of  claim 14 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       16 . The cutting instrument of  claim 12 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       17 . A wire drawing die comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       18 . The wire drawing die of  claim 17 , wherein the heat sink holder comprises molybdenum.  
   
   
       19 . The wire drawing die of  claim 17 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       20 . The wire drawing die of  claim 19 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       21 . The wire drawing die of  claim 17 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       22 . A bearing comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       23 . The bearing of  claim 22 , wherein the heat sink holder comprises molybdenum.  
   
   
       24 . The bearing die of  claim 22 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       25 . The bearing of  claim 24 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       26 . The bearing of  claim 22 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       27 . A diamond anvil comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       28 . The diamond anvil of  claim 27 , wherein the heat sink holder comprises molybdenum.  
   
   
       29 . The diamond anvil of  claim 27 , wherein all temperature gradients across the growth surface of the diamond are less than about 30° C.  
   
   
       30 . The diamond anvil of  claim 29 , wherein all temperature gradients across the growth surface of the diamond are less than about 20° C.  
   
   
       31 . The diamond anvil of  claim 27 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       32 . The diamond anvil of  claim 27 , wherein the single-crystal diamond is substantially colorless.  
   
   
       33 . The diamond anvil of  claim 27 , wherein the anvil is a Bridgman anvil.  
   
   
       34 . The diamond anvil of  claim 27 , wherein the anvil is a Paris-Edinburgh toroid anvil.  
   
   
       35 . An etalon comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       36 . The etalon of  claim 35 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       37 . An optical window comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       38 . The optical window of  claim 37 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       39 . An alpha particle detector comprising a single-crystal diamond, wherein the single-crystal diamond was produced by a method comprising: 
 i) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    ii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30% CH 4  per unit of H 2 .    
   
   
       40 . The alpha particle detector of  claim 39 , wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25% O 2  per unit of CH 4  in the deposition chamber atmosphere.  
   
   
       41 . A laser-inscribed single-crystal diamond produced by a method comprising: 
 i) laser inscribing a mark onto a diamond substrate prior to starting the CVD process to prepare a single-crystal diamond    ii) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of 900-1400° C. and the diamond is mounted in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond and    iii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber having an atmosphere greater than 150 torr, wherein the atmosphere comprises from about 8% to in excess of about 30 % CH 4  per unit of H 2 .    
   
   
       42 . The laser-inscribed single-crystal diamond of  claim 41  wherein the single-crystal diamond is produced by a method further comprising the use of from about 5 to about 25 % O 2  per unit of CH 4  in the deposition chamber atmosphere.