US2007158791A1PendingUtilityA1
Superconducting junction element and superconducting junction circuit
Assignee: INT SUPERCONDUCTIVITY TECHPriority: Oct 21, 2005Filed: Oct 20, 2006Published: Jul 12, 2007
Est. expiryOct 21, 2025(expired)· nominal 20-yr term from priority
H03K 19/195H10N 60/124H10N 69/00
40
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Claims
Abstract
A superconducting junction element has a lower electrode formed by a superconductor layer, a barrier layer provided on a portion of a surface of the lower electrode, an upper electrode formed by a superconductor and covering the barrier layer, and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode. A critical current density of the superconducting junction is controlled based on an area of the lower electrode.
Claims
exact text as granted — not AI-modified1 . A superconducting junction element comprising:
a lower electrode formed by a superconductor layer; a barrier layer provided on a portion of a surface of the lower electrode; an upper electrode formed by a superconductor and covering the barrier layer; and a superconducting junction formed by the lower electrode, the barrier layer and the upper electrode, wherein a critical current density of the superconducting junction is controlled based on an area of the lower electrode.
2 . The superconducting junction element as claimed in claim 1 , wherein the lower electrode has a rectangular shape.
3 . The superconducting junction element as claimed in claim 2 , wherein the critical current density of the superconducting junction is controlled based on a width and/or a depth of the lower electrode.
4 . The superconducting junction element as claimed in claim 1 , further comprising:
a superconducting magnetic shielding layer that is grounded; and an insulator layer provided on the superconducting magnetic shielding layer, wherein the superconducting magnetic shielding layer is electrically connected to the lower electrode via a contact hole provided in the insulator layer.
5 . The superconducting junction element as claimed in claim 4 , wherein the critical current density of the superconducting junction is further controlled based on an area of the contact hole.
6 . The superconducting junction element as claimed in claim 1 , wherein each of the upper and lower electrodes is made of an oxide superconductor material.
7 . A superconducting junction circuit which uses a signal of a flux quantum as a carrier, comprising:
a lower electrode formed by a superconductor layer; a barrier layer provided on a portion of a surface of the lower electrode; an upper electrode formed by a superconductor and covering the barrier layer; and a plurality of superconducting junctions each formed by a corresponding lower electrode and barrier layer and the upper electrode, wherein a critical current density of the superconducting junction is controlled based on an area of the lower electrode.
8 . The superconducting junction circuit as claimed in claim 7 , wherein areas of the lower electrodes forming the superconducting junctions are substantially the same.
9 . The superconducting junction circuit as claimed in claim 7 , wherein shapes of the lower electrodes forming the superconducting junctions are substantially the same.
10 . The superconducting junction circuit as claimed in claim 7 , wherein the lower electrodes forming the superconducting junctions have a rectangular shape.
11 . The superconducting junction circuit as claimed in claim 10 , wherein the critical current density of each of the superconducting junctions is controlled based on a width and/or a depth of the corresponding lower electrode.
12 . The superconducting junction circuit as claimed in claim 11 , wherein widths of the lower electrodes of the superconducting junctions have an average value Avg 1 and a standard deviation σ 1 , and a ratio σ 1 /Avg 1 is set in a range of 0 to 23%.
13 . The superconducting junction circuit as claimed in claim 12 , wherein depths of the lower electrodes of the superconducting junctions have an average value Avg 2 and a standard deviation σ 2 , and a ratio σ 2 /Avg 2 is set in a range of 0 to 23%.
14 . The superconducting junction circuit as claimed in claim 7 , further comprising:
a superconducting magnetic shielding layer that is grounded; and an insulator layer provided on the superconducting magnetic shielding layer, wherein the superconducting magnetic shielding layer is electrically connected to the lower electrode via a contact hole provided in the insulator layer.
15 . The superconducting junction circuit as claimed in claim 14 , wherein the critical current density of each of the superconducting junctions is further controlled based on an area of a corresponding contact hole.
16 . The superconducting junction circuit as claimed in claim 14 , further comprising:
a lower electrode connecting layer formed by a superconductor layer and electrically connecting a plurality of lower electrodes.
17 . The superconducting junction circuit as claimed in claim 16 , wherein the lower electrode connecting layer is provided on the lower electrodes.
18 . The superconducting junction circuit as claimed in claim 16 , wherein a plurality of said lower electrode connecting layers are provided with respect to the lower electrodes, and the lower electrode connecting layers electrically connect mutually different lower electrodes.
19 . The superconducting junction circuit as claimed in claim 14 , wherein an area of the contact hole is 100 μm 2 or less and greater than 0.
20 . The superconducting junction circuit as claimed in claim 7 , wherein each of the upper and lower electrodes is made of an oxide superconductor material.
21 . The superconducting junction circuit as claimed in claim 14 , wherein the superconducting magnetic shielding layer is made of an oxide superconductor material.
22 . The superconducting junction circuit as claimed in claim 16 , wherein the lower electrode connecting layer is made of an oxide superconductor material.
23 . A superconducting junction circuit comprising:
a plurality of lower electrodes formed by a superconductor layer; a barrier layer provided on a portion of a surface of each of the plurality of lower electrodes; at least one upper electrode formed by a superconductor and covering each barrier layer; and a plurality of superconducting junctions each formed by a corresponding lower electrode and barrier layer and the upper electrode, wherein each of the plurality of lower electrodes has an area that controls a critical current density of a corresponding one of the plurality of superconducting junction to a desired value.Cited by (0)
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