Electronic devices formed of high-purity molybdenum oxide

Abstract

The present invention is directed to electronic devices comprising high-purity molybdenum oxide in at least a part of the devices. The devices according to the present invention such as a bipolar transistor, a field effect transistor and a thyristor have a high withstand voltage. The present invention is directed also hostile-environment electron devices formed using high-purity molybdenum oxide. The devices according to the present invention can be fabricated at a relatively lower temperature such as 700° C. than that at which GaN or SiC devices are fabricated, that is a temperature higher 1000° C.

1 . A semiconductor electronic device wherein high-purity molybdenum oxide is used at least in a substantial part.  
   
   
       2 . The semiconductor electronic device according to  claim 1 , wherein said device is a resistor device, a diode, a transistor, a Hall effect device, a varistor, a thermistor, a thyristor or a memory device.  
   
   
       3 . The semiconductor electronic device according to  claim 1 , wherein said substantial part is a channel layer.  
   
   
       4 . The semiconductor electronic device according to  claim 1 , wherein device layers are formed on a molybdenum substrate.