Manufacturing method of semiconductor device having organic semiconductor film

Abstract

A method of manufacturing a semiconductor device having an organic semiconductor film comprises a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover, a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate, a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode, a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure, and a step of forming an organic semiconductor layer forming a channel portion. Lower and upper electrodes are positioned in self-alignment manner and thus no positional displacement occurs even if a printing method is used. Accordingly, semiconductor devices such as flexible substrates using an organic semiconductor can be manufactured inexpensively by using a printing method.

1 . A method of manufacturing a semiconductor device having an organic semiconductor film, said method comprising: 
 a step of preparing a transparent substrate at least having an opaque gate electrode and a gate insulator thereover;    a step of forming a layer containing metal-nano-particles as a conductive layer for a source electrode and a drain electrode to the thus prepared transparent substrate;    a step of applying exposure to the transparent substrate on the side of a surface not mounted with the opaque gate electrode;    a step of flushing away a portion other than the source electrode and the drain electrode in the layer containing the metal-nano-particles after the exposure; and    a step of forming an organic semiconductor layer forming a channel portion.    
     
     
         2 . A method of manufacturing a semiconductor device having an organic semiconductor film according to  claim 1 , wherein the layer containing the metal-nano-particles is formed by a printing method.  
     
     
         3 . A method of manufacturing a semiconductor device having an organic semiconductor film according to  claim 1 , wherein each of the organic semiconductor layer having the channel portion, the gate insulator formed above the transparent substrate, and the opaque gate electrode is formed by a printing method.  
     
     
         4 . A method of manufacturing a semiconductor device having an organic semiconductor film according to  claim 1 , wherein the transparent substrate having at least the opaque gate electrode and the gate insulator thereover is formed by: 
 a step of forming the opaque gate electrode above the transparent substrate; and    a step of forming the gate insulator at least covering the opaque gate electrode.    
     
     
         5 . A method of manufacturing a semiconductor device having an organic semiconductor film according to  claim 1 , wherein the transparent substrate is a flexible substrate.  
     
     
         6 . A method of manufacturing a semiconductor device having an organic semiconductor film according to  claim 1 , wherein the exposure light from the transparent substrate is at a wavelength for light absorption of the metal-nano-particles.  
     
     
         7 .- 20 . (canceled)