US2007182384A1PendingUtilityA1

Vehicle Rotating Electric Machine

48
Assignee: HITACHI LTDPriority: Apr 12, 2004Filed: Apr 16, 2007Published: Aug 9, 2007
Est. expiryApr 12, 2024(expired)· nominal 20-yr term from priority
H10W 72/07652H10W 72/627H10W 72/871H10W 72/926H10W 90/734F02D 2041/2075F02N 11/0859F02N 11/04B60W 10/08F02N 11/0814H02J 7/1492H02M 7/003F02N 2011/0896B60K 6/48B60K 6/26H10W 90/764H10W 72/60Y02T10/70Y02T10/62
48
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Claims

Abstract

An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Claims

exact text as granted — not AI-modified
1 . A power converting device comprising:  
       a module unit having a power control circuit; and  
       a control unit that controls the operation of the power control circuit, 
 wherein the power control circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series, and  
 the control unit comprises:  
 a control circuit that outputs command signals for driving the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices respectively; and  
 a driver circuit that outputs drive signals for driving the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices to those MOS semiconductor devices respectively upon receiving the command signals outputted from the control circuit,  
 wherein the control circuit comprises a plurality of first electronic circuit elements and the driver circuit comprises a plurality of second electronic circuit elements,  
 the plurality of first electronic circuit elements are integrated and mounted on a first substrate and the plurality of second electronic circuit elements are integrated and mounted on a second substrate.  
 
     
     
         2 . A power converting device according to  claim 1 , wherein the power control circuit controls a power that is supplied from a vehicle power supply or a power that is supplied to the vehicle power supply.  
     
     
         3 . A power converting device according to  claim 2 , wherein the control circuit has a power source on the basis of the power that is supplied from the vehicle and operates to output the command signals for driving the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices.  
     
     
         4 . A power converting device according to  claim 1 , wherein the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices are field effect transistors.  
     
     
         5 . A power converting device according to  claim 4 , wherein each pair of the P-channel semiconductor device and the N-channel MOS semiconductor device have a drain electrode thereof connected to conductors of the same potential, and are mounted on the conductors.  
     
     
         6 . A power converting device according to  claim 1 , wherein the control unit includes a rewritable memory.  
     
     
         7 . A power converting device according to  claim 1 , wherein the control unit comprises an adjusting device for adjusting the operation speeds of the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices, and a memory device that stores information for setting the operation speed therein, and 
 the adjusting device adjusts the operation speeds of the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices according to the operation speed information from the memory device.    
     
     
         8 . A power converting device according to  claim 5 , wherein the conductor has one temperature sensing element for sensing the temperatures of the P-channel MOS semiconductor devices and the N-channel MOS semiconductor devices.

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