Method of manufacturing semiconductor device, and semiconductor device

Abstract

A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.

1 . A semiconductor device comprising: 
 a dielectric film;    a first hydrogen barrier film formed on the dielectric film;    an intermediate layer formed on the first hydrogen barrier film, and composed of a film having a lower internal stress compared to the first hydrogen barrier film;    a lower electrode formed on the intermediate layer;    a ferroelectric layer formed on the lower electrode;    an upper electrode formed on the ferroelectric layer;    a second hydrogen barrier film that covers the upper electrode, the ferroelectric layer and the lower electrode, and has a marginal portion located above the intermediate layer; and    a third hydrogen barrier film that covers the second hydrogen barrier film and the intermediate layer, and has a marginal portion located above the intermediate layer.    
   
   
       2 . The semiconductor device of  claim 1  which further comprises a connection hole in the first hydrogen barrier film and the intermediate layer; and 
 a conductor embedded in the connection hole.    
   
   
       3 . The semiconductor device of  claim 2  which further comprises a transistor formed under the dielectric film, with the transistor and the lower electrode of the ferroelectric capacitor being connected through the conductor.  
   
   
       4 . The semiconductor device of  claim 1 , wherein the first hydrogen barrier film is a silicon nitride film, and the intermediate layer is a silicon oxide film.  
   
   
       5 . The semiconductor device of  claim 4 , wherein the silicon nitride film has a film thickness of 50 nm or more but 300 nm or less.