Large area deposition in high vacuum with high thickness uniformity

Abstract

The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

1 - 12 . (canceled)  
   
   
       13 . An effusing source for film deposition comprising a single hole or a combination of holes having a hole diameter less than one order of magnitude smaller than the mean free path of the molecules and having a thickness at least one order of magnitude smaller than the diameter, wherein the combination of holes are distributed on a ring or on several rings with a tilt angle, and wherein the effusing source geometry is modified to control and shape molecular beams impinging distribution on a substrate under vacuum.  
   
   
       14 . An effusing source according to  claim 13  designed to impinge effusing molecules on a deposition area situated at a distance of at least one order of magnitude larger than the hole diameter.  
   
   
       15 . An effusing source according to  claim 13  designed in such a way that the ratio “number of molecules impinging on a deposition area” versus “total number of effusing molecules” is more than 20%.  
   
   
       16 . An effusing source according to  claim 13  wherein the source is designed in such a way that the distribution of impinging molecules on a deposition area in the molecular regime only depends on the source relative position and on its molecular angular distribution.  
   
   
       17 . An effusing source according to  claim 13  wherein it includes a gas phase collisions forbidden volume and pumping apertures in the surface of said volume to reduce the contribution of walls surface scattered molecules for certain angles.