US2007199191A1PendingUtilityA1

Method for fabricating a three-dimensional acceleration sensor

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Assignee: SAKAMOTO AKIHIROPriority: Jul 18, 2005Filed: May 1, 2007Published: Aug 30, 2007
Est. expiryJul 18, 2025(expired)· nominal 20-yr term from priority
B81B 7/0012G01P 2015/0842H01S 4/00G01P 2015/084B81C 1/00595Y10T29/49002G01P 15/123B81C 2201/0133G01P 15/00G01P 15/0802B81B 2201/0235G01P 15/18Y10T29/49007
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Claims

Abstract

According to the present invention, a method for fabricating a three-dimensional acceleration sensor, comprising: providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space; selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and selectively removing the active layer to form a groove separating the first region from a movable mass.

Claims

exact text as granted — not AI-modified
1 - 29 . (canceled)  
     
     
         30 . A method for fabricating a three-dimensional acceleration sensor, comprising: 
 providing a semiconductor substrate having first and second surfaces;    forming an insulating layer on the first surface of the semiconductor substrate;    forming an active layer on the insulating layer;    selectively removing the semiconductor substrate so as to define a first boundary of a movable mass;    providing a glass plate on the second surface of the semiconductor substrate;    forming a plurality of first openings on the active layer at a first region;    forming a plurality of second openings on the active layer at a second region adjacent the first region so that the second openings have larger areas than the first openings;    selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of the first openings; and    after the step of removing the insulating layer located under the first region, selectively removing the insulating layer located under the second region in a wet-etching process through the plurality of the second openings.    
     
     
         31 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 30 , wherein 
 the second openings are formed to separate the movable mass, a stationary frame, beams and the stoppers from each other.    
     
     
         32 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 30 , wherein 
 the first region is a stopper which restricts over-move of the movable mass.    
     
     
         33 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 32 , wherein 
 the movable mass is shaped to have corners, and    the stopper comprises a plurality of members arranged around the corners of the movable mass.    
     
     
         34 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 30 , further comprising: 
 before forming the first and second openings, forming a detecting device to detect motion of the movable mass and output an electrical signal corresponding to a degree of the motion.    
     
     
         35 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 30 , wherein 
 the step of providing a glass plate is carried out before forming the plurality of openings on the active layer.    
     
     
         36 . The method for fabricating a three-dimensional acceleration sensor, according to  claim 30 , wherein 
 the step of providing a glass plate is carried out in an anodic bonding process.    
     
     
         37 . The method for fabricating a three-dimensional acceleration sensor according to  claim 30 , wherein 
 the glass plate is of pyrex glass.    
     
     
         38 . The method for fabricating a three-dimensional acceleration sensor according to  claim 30 , wherein 
 the insulating layer is partly remained within the groove so that the insulating layer comprises an extended region, which extends from the movable mass toward the first region.    
     
     
         39 . The method for fabricating a three-dimensional acceleration sensor according to  claim 30 , wherein 
 the first openings are arranged in a regular array manner.

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