Device having a redundant structure

Abstract

Device with a damascene interconnect for integrated circuits with improved reliability and improved electromigration properties. The device including a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line.

1 . A device comprising: 
 a dual damascene line comprising a metal line and a via; and    a redundant liner arranged to divide the metal line.    
   
   
       2 . The device in accordance with  claim 1 , further comprising: 
 an interlevel layer formed over the dual damascene line; and    the interlevel layer comprising at least one second metal line and at least one second via, the at least one second via extending through the redundant liner.    
   
   
       3 . The device in accordance with  claim 2 , wherein the at least one second via extends into the metal line arranged below the redundant liner.  
   
   
       4 . The device in accordance with  claim 2 , further comprising a cap layer formed between the dual damascene line and the interlevel layer.  
   
   
       5 . The device in accordance with  claim 1 , further comprising: 
 a plurality of interlevel layers formed over the dual damascene layer, wherein each interlevel layer includes at least one metal line divided by a redundant liner and at least via; and    each at least one via extends through a structurally lower redundant liner.    
   
   
       6 . The device in accordance with  claim 5 , further comprising a plurality of cap layers formed between each of the plurality of interlevel layers.  
   
   
       7 . The device in accordance with  claim 1 , further comprising at least one hardmask formed on at least one of the plurality of interlevel layers.  
   
   
       8 . A device, comprising: 
 a redundant liner structured and arranged to divide a metal line of dual damascene line; and    a trench having at least a portion arranged to extend through the redundant liner.