Magnetron Sputtering Device In which Two Modes Of Magnetic Flux Distribution (Balanced Mode/Unbalanced Mode) Can Be Switched From One To The Other And Vice Versa, A Film Formation Method For Forming A Film From An Inorganic Film Formation Material Using The Device, And A Dual Mode Magnetron Sputtering Device And Film Formation Method For Forming A Film From An Inorganic Film Formation Material At A Low Temperature Using The Device

Abstract

The first object of this invention is to provide a magnetron sputtering device in which switching the magnetic field arrangement from the balanced mode to the unbalanced one and vice versa can be easily achieved. The second object is to provide a dual magnetron sputtering device which allows one to rapidly form a film from an inorganic film formation material over a wide temperature range from a low to high temperature. Provided is a magnetron sputtering device in which a sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and in which an article that exhibits ferromagnetism at room temperature is removably placed close to the surface of the sputtering cathode for holding a material target such that conversion of the balanced magnetic field arrangement into the unbalanced one can be easily achieved by removing the ferromagnetic article. Further provided is a dual magnetron sputtering device in which an angle formed between two lines one extending from the surface of material target of one magnetron and the other from the surface of opposite target of the other magnetron falls within a range of 160 to 20°, preferably 160 to 70°, so that an active focus of plasma can converge onto a substrate, to enable the rapid formation of a film there at a low temperature. The rapid and low temperature film formation is further enhanced by adjusting the two magnetrons so as to produce an unbalanced distribution of magnetic fluxes, and using a gas mixture comprising two or more rare gases as a sputtering gas.

1 . A magnetron sputtering device in which a sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and in which the balanced mode can be converted into the unbalanced mode by placing an article that exhibits ferromagnetism at room temperature, onto or close to the surface of the sputtering cathode for holding a material target, and the unbalanced mode can be reconverted into the balanced mode by removing the ferromagnetic article.  
   
   
       2 . The magnetron sputtering device as described in  claim 1  in which the sputtering cathode is arranged to produce a balanced distribution of magnetic fluxes and an element has been placed onto the surface of the sputtering cathode for holding a material target, and in which the magnetic flux distribution can be converted from the unbalanced mode to the balanced one or vice versa, by replacing the element with another element made of a material that exhibits ferromagnetism at room temperature.  
   
   
       3 . The magnetron sputtering device as described in  claim 2  in which the element placed on the surface of the sputtering cathode for holding a material target is any one chosen from a middle pole, a middle pole cover, and an insulating body.  
   
   
       4 . The magnetron sputtering device as described in  claim 3  in which the sputtering cathode arranged to produce a balanced distribution of magnetic fluxes is a square-shaped sputtering cathode.  
   
   
       5 . A film formation method for forming a well-crystallized film from an inorganic film formation material using a magnetron sputtering device, the method comprising selecting an unbalanced type magnetron sputtering device as described in  claim 1 , thereby enabling a film to be formed over a wide temperature range on a substrate whose melting point falls between a low and high temperature.  
   
   
       6 . The film formation method as described in  claim 5  for forming a well-crystallized film from an inorganic film formation material, wherein the substrate is an organic polymer sheet.  
   
   
       7 . The film formation method as described in  claim 5  for forming a well-crystallized film from an inorganic film formation material, wherein the inorganic film formation material is any one metal chosen from titanium, aluminum, zirconium, zinc, tin, indium, silicon, tantalum, bismuth, copper, boron, carbon, vanadium, manganese, tungsten, molybdenum, barium, strontium, yttorium, and niobium, and their oxides, nitrides, and borides.  
   
   
       8 . The film formation method as described in  claim 7  for forming a well-crystallized film from an inorganic film formation material, wherein the oxide is titanium dioxide having a high photocatalytic activity.  
   
   
       9 . A dual magnetron sputtering device in which two magnetrons are slanted towards each other so that an angle formed between two lines one extending from the surface of a material target of one magnetron and the other from the surface of a material target of the other magnetron falls within a range of 160 to 20°, preferably 160 to 70°, to allow an active focus of plasma to converge onto the surface of a substrate, thereby enabling the high speed formation of a film there at a low temperature.  
   
   
       10 . The dual magnetron sputtering device as described in  claim 9  wherein the two magnetrons are set to produce an unbalanced distribution of magnetic fluxes.  
   
   
       11 . The dual magnetron sputtering device as described in  claim 9  wherein gas to be introduced into the dual magnetron sputtering device comprises at least two chosen from helium, neon, argon, krypton, xenon, and radon.  
   
   
       12 . A film formation method for forming a film from an inorganic film formation material using a dual magnetron sputtering device, the method comprising disposing the two magnetrons with respect to each other such that, when the surface of a target of each magnetron being taken as a reference, an angle formed between the two reference lines one extending from the surface of a target of one magnetron and the other from the surface of a target of the other magnetron falls between 160 and 20°, and that an intersection region where, for a pair of closely apposed erosion zones out of plural erosion zones developed on the two targets, one columnar projection from the surface of erosion zone of one magnetron, whose periphery corresponds with said surface and whose direction is normal to said surface, and the counterpart from the surface of erosion zone of the other magnetron cross with each other, falls totally or partially upon the surface of a substrate where a film is to be formed, and allowing a film to be formed on the substrate.  
   
   
       13 . The film formation method as described in  claim 12  for forming a film from an inorganic film formation material using a dual magnetron sputtering device wherein the dual magnetron sputtering device has been set to produce an unbalanced distribution of magnetic fluxes.  
   
   
       14 . The film formation method as described in  claim 12  for forming a film from an inorganic film formation material wherein gas to be introduced into the dual magnetron sputtering device comprises at least two chosen from helium, neon, argon, krypton, xenon, and radon.  
   
   
       15 . The film formation method as described in  claim 12  for forming a film from an inorganic film formation material wherein an organic polymer sheet is used as a substrate and film formation is performed at a low temperature.  
   
   
       16 . The film formation method as described in  claim 15  for forming a film from an inorganic film formation material wherein the organic polymer sheet is a polyethylene terephthalate polymer sheet.  
   
   
       17 . The film formation method as described in  claim 12  for forming a film from an inorganic film formation material wherein glass is used as a substrate, and a film formed on the glass.  
   
   
       18 . The film formation method as described in  claim 12  for forming a film from an inorganic film formation material wherein the inorganic film formation material is any one inorganic material chosen from carbon, metals, oxides, nitrides, carbides, and borides.  
   
   
       19 . The film formation method as described in  claim 18  for forming a film from an inorganic film formation material wherein the oxide is titanium dioxide having a high photocatalytic activity.